Doses: Difference between revisions

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{| class="wikitable"
{| class="wikitable"
|+125 kV
|+[[Elionix F-125|125 kV]]
|-
|-
|  
|[[Resists|Resist]]
|Si
|Si
|InAs<sup>UC</sup>
|InAs<sup>UC</sup>
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|-
|-
|A4
|A4
|1000
|1200-1300 <ref name="Kringhoej" />
|700
|700
|?
|900 <ref name="Hertel" />
|630
|630
|?
|?
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|A6
|A6
|1200
|1200
|?
|800
|?
|900-920 <ref name="Hertel" />
|760
|760
|?
|?
|-
|-
|El6
|EL6
|?
|?
|?
|?
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|?
|?
|-
|-
|El9
|EL9
|?
|450-500 <ref name="Kringhoej">[https://nbi.ku.dk/english/theses/phd-theses/anders-kringhoej/Anders_Kringhoej_PhD.pdf Kringhøj PhD thesis]</ref>
|?
|?
|?
|280 <ref name="Hertel" />
|420
|420
|?
|?
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|-
|-
|CSAR9
|CSAR9
|?
|500 <ref name="Kringhoej" />
|?
|?
|?
|?
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|-
|-
|CSAR13
|CSAR13
|450
|430 <ref name="Kringhoej" />
|?
|?
|?
|?
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|?
|?
|?
|?
|?
|500 <ref name="Hertel" />
|745
|745
|?
|?
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{| class="wikitable"
{| class="wikitable"
|+100 kV
|+[[Elionix 7000|100 kV]]
|-
|-
|  
|[[Resists|Resist]]
|Si
|Si
|InAs<sup>UC</sup>
|InAs<sup>UC</sup>
Line 87: Line 87:
|900
|900
|?
|?
|300
|620 <ref name="Drachmann" />
|?
|?
|?
|1500-1600 <ref name="Ansaloni" />
|-
|-
|A4
|A4
|900
|900
|?
|640-680 <ref name="Whiticar">[https://nbi.ku.dk/english/theses/phd-theses/alexander-m-whiticar/Whiticar_thesis.pdf Whiticar PhD thesis]</ref>
|500
|608-640 <ref name="Drachmann">[https://nbi.ku.dk/english/theses/phd-theses/asbjorn-cliff-drachmann/Drachmann_PhD_Thesis.pdf/Drachmann_PhD_Thesis.pdf Drachmann PhD thesis]</ref>
|630
|630
|?
|900 <ref name="Ansaloni">[https://nbi.ku.dk/english/theses/phd-theses/fabio-ansaloni/thesis_Ansaloni.pdf Ansaloni PhD thesis]</ref>
|-
|-
|A6
|A6
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|?
|?
|-
|-
|El6
|EL6
|?
|?
|?
|?
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|?
|?
|-
|-
|El9
|EL9
|?
|?
|?
|?
|?
|250
|380 <ref name="Hertel">[https://nbi.ku.dk/english/theses/phd-theses/hertel/dissertation_Hertel.pdf Hertel PhD thesis]</ref>
|200 <ref name="Drachmann" />
|?
|?
|-
|-
Line 124: Line 124:
|?
|?
|?
|?
|?
|335 <ref name="Ansaloni" />
|-
|-
|CSAR9
|CSAR9
Line 131: Line 131:
|?
|?
|?
|?
|?
|335 <ref name="Ansaloni" />
|-
|-
|CSAR13
|CSAR13
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* InAs: Uniform clearing  
* InAs: Uniform clearing  
* Si: Optimal contrast
* Si: Optimal contrast
== References ==
<references />


== Note ==
== Note ==
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.
== Experimental ==
== Experimental ==
* Dose density matrix for small and large spot size.
* Measure CD as a function of dose and density for the two spot sizes.
* Intersection of the two plots, for a given density gives isofocal dose.
* Convert doses to dose factors, given that 0% iso-dose factor == PEC_df <sub>0%</sub>
* Base dose == isofocal dose <sub>0%</sub> / PEC_df <sub>0%</sub>
* For density larger than 0%, predicted dose factor = (1+η)/(1+η*ρ*(1+φ/100))
** 1+η = PEC_df <sub>0%</sub>
** Fit experimental isofocal dose factors and predicted dose factor by varying psi
100 kV:
Si: 897 uC/cm2 and phi = 75%
125 kV:
125 kV:
InP: 607 uC/cm2 and phi = 35%


InAs:
InP: 572 uC/cm2 and phi = 41%
 
InAs: 589 uC/cm2 and phi = 33%


Si: 906 uC/cm2 and phi = 45%
Si: 906 uC/cm2 and phi = 45%


GaAs:752 uC/cm2 and phi = 39%
GaAs:752 uC/cm2 and phi = 39%


{| class="wikitable"
{| class="wikitable"
|+125 kV
|+100 kV
|-
|-
|  
|[[Resists|Resist]]
|Si (μC/cm<sup>2</sup>)/φ (%)
|Si (μC/cm<sup>2</sup>) '''/''' φ
|InAs (μC/cm<sup>2</sup>)/φ (%)
|InAs (μC/cm<sup>2</sup>) '''/''' φ
|InP (μC/cm<sup>2</sup>)/φ (%)
|InP (μC/cm<sup>2</sup>) '''/''' φ
|GaAs (μC/cm<sup>2</sup>)/φ (%)
|GaAs (μC/cm<sup>2</sup>) '''/''' φ
|SiGe (μC/cm<sup>2</sup>)/φ (%)
|SiGe (μC/cm<sup>2</sup>) '''/''' φ
|-
|-
|A2
|A2
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|-
|-
|A4
|A4
|906
|897 / 75%
|?
|?
|?
|?
|-
|A6
|?
|?
|?
|?
|?
|-
|El6
|?
|?
|?
|?
|?
|-
|El9
|?
|?
|?
|?
|?
|-
|CSAR4
|?
|?
|?
|?
|?
|-
|CSAR9
|?
|?
|?
|?
|?
|-
|CSAR13
|?
|?
|?
|?
|?
|?
|?
|?
|-
|50k+A4
|?
|?
|?
|?
|?
|-
|}
{| class="wikitable"
|+125 kV
|-
|[[Resists|Resist]]
|Si (μC/cm<sup>2</sup>) '''/''' φ
|InAs (μC/cm<sup>2</sup>) '''/''' φ
|InP (μC/cm<sup>2</sup>) '''/''' φ
|GaAs (μC/cm<sup>2</sup>) '''/''' φ
|SiGe (μC/cm<sup>2</sup>) '''/''' φ
|-
|A2
|?
|?
|?
|?
|?
|-
|A4
|906/ 45%
|589/ 33%
|572/ 41%
|752/ 39%
|?
|?
|-
|-
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|-
|-
|}
|}
[[Category:Fabrication]]

Latest revision as of 18:23, 10 April 2022

125 kV
Resist Si InAsUC InPUC GaAsUC SiGe
A2 1000 700 ? ? ?
A4 1200-1300 [1] 700 900 [2] 630 ?
A6 1200 800 900-920 [2] 760 ?
EL6 ? ? ? ? ?
EL9 450-500 [1] ? 280 [2] 420 ?
CSAR4 430 ? ? ? ?
CSAR9 500 [1] ? ? ? ?
CSAR13 430 [1] ? ? 350 ?
50k+A4 ? ? 500 [2] 745 ?
100 kV
Resist Si InAsUC InPUC GaAsUC SiGe
A2 900 ? 620 [3] ? 1500-1600 [4]
A4 900 640-680 [5] 608-640 [3] 630 900 [4]
A6 1000 ? ? 670 ?
EL6 ? ? ? ? ?
EL9 ? 250 380 [2] 200 [3] ?
CSAR4 400 ? ? ? 335 [4]
CSAR9 ? ? ? ? 335 [4]
CSAR13 ? ? ? ? ?
50k+A4 ? ? ? 630 ?
  • GaAs: Uniform clearing
  • InP: Uniform clearing
  • InAs: Uniform clearing
  • Si: Optimal contrast

References

  1. ↑ 1.0 1.1 1.2 1.3 Kringhøj PhD thesis
  2. ↑ 2.0 2.1 2.2 2.3 2.4 Hertel PhD thesis
  3. ↑ 3.0 3.1 3.2 Drachmann PhD thesis
  4. ↑ 4.0 4.1 4.2 4.3 Ansaloni PhD thesis
  5. ↑ Whiticar PhD thesis


Note

Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.

Experimental

  • Dose density matrix for small and large spot size.
  • Measure CD as a function of dose and density for the two spot sizes.
  • Intersection of the two plots, for a given density gives isofocal dose.
  • Convert doses to dose factors, given that 0% iso-dose factor == PEC_df 0%
  • Base dose == isofocal dose 0% / PEC_df 0%
  • For density larger than 0%, predicted dose factor = (1+η)/(1+η*ρ*(1+φ/100))
    • 1+η = PEC_df 0%
    • Fit experimental isofocal dose factors and predicted dose factor by varying psi

100 kV:

Si: 897 uC/cm2 and phi = 75%

125 kV:

InP: 572 uC/cm2 and phi = 41%

InAs: 589 uC/cm2 and phi = 33%

Si: 906 uC/cm2 and phi = 45%

GaAs:752 uC/cm2 and phi = 39%

100 kV
Resist Si (μC/cm2) / φ InAs (μC/cm2) / φ InP (μC/cm2) / φ GaAs (μC/cm2) / φ SiGe (μC/cm2) / φ
A2 ? ? ? ? ?
A4 897 / 75% ? ? ? ?
A6 ? ? ? ? ?
El6 ? ? ? ? ?
El9 ? ? ? ? ?
CSAR4 ? ? ? ? ?
CSAR9 ? ? ? ? ?
CSAR13 ? ? ? ? ?
50k+A4 ? ? ? ? ?


125 kV
Resist Si (μC/cm2) / φ InAs (μC/cm2) / φ InP (μC/cm2) / φ GaAs (μC/cm2) / φ SiGe (μC/cm2) / φ
A2 ? ? ? ? ?
A4 906/ 45% 589/ 33% 572/ 41% 752/ 39% ?
A6 ? ? ? ? ?
El6 ? ? ? ? ?
El9 ? ? ? ? ?
CSAR4 ? ? ? ? ?
CSAR9 ? ? ? ? ?
CSAR13 ? ? ? ? ?
50k+A4 ? ? ? ? ?
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