Doses: Difference between revisions

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= 125 kV =
{| class="wikitable"
==GaAs==
|+[[Elionix F-125|125 kV]]
A6: 742 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA
|-
|[[Resists|Resist]]
|Si
|InAs<sup>UC</sup>
|InP<sup>UC</sup>
|GaAs<sup>UC</sup>
|SiGe
|-
|A2
|1000
|700
|?
|?
|?
|-
|A4
|1200-1300 <ref name="Kringhoej" />
|700
|900 <ref name="Hertel" />
|630
|?
|-
|A6
|1200
|800
|900-920 <ref name="Hertel" />
|760
|?
|-
|EL6
|?
|?
|?
|?
|?
|-
|EL9
|450-500 <ref name="Kringhoej">[https://nbi.ku.dk/english/theses/phd-theses/anders-kringhoej/Anders_Kringhoej_PhD.pdf Kringhøj PhD thesis]</ref>
|?
|280 <ref name="Hertel" />
|420
|?
|-
|CSAR4
|430
|?
|?
|?
|?
|-
|CSAR9
|500 <ref name="Kringhoej" />
|?
|?
|?
|?
|-
|CSAR13
|430 <ref name="Kringhoej" />
|?
|?
|350
|?
|-
|50k+A4
|?
|?
|500 <ref name="Hertel" />
|745
|?
|-
|}


CSAR13: 420uC/cm2 base dose/24s o-xylene/5s conc. MIBK develop with IPA rinse
{| class="wikitable"
|+[[Elionix 7000|100 kV]]
|-
|[[Resists|Resist]]
|Si
|InAs<sup>UC</sup>
|InP<sup>UC</sup>
|GaAs<sup>UC</sup>
|SiGe
|-
|A2
|900
|?
|620 <ref name="Drachmann" />
|?
|1500-1600 <ref name="Ansaloni" />
|-
|A4
|900
|640-680 <ref name="Whiticar">[https://nbi.ku.dk/english/theses/phd-theses/alexander-m-whiticar/Whiticar_thesis.pdf Whiticar PhD thesis]</ref>
|608-640 <ref name="Drachmann">[https://nbi.ku.dk/english/theses/phd-theses/asbjorn-cliff-drachmann/Drachmann_PhD_Thesis.pdf/Drachmann_PhD_Thesis.pdf Drachmann PhD thesis]</ref>
|630
|900 <ref name="Ansaloni">[https://nbi.ku.dk/english/theses/phd-theses/fabio-ansaloni/thesis_Ansaloni.pdf Ansaloni PhD thesis]</ref>
|-
|A6
|1000
|?
|?
|670
|?
|-
|EL6
|?
|?
|?
|?
|?
|-
|EL9
|?
|250
|380 <ref name="Hertel">[https://nbi.ku.dk/english/theses/phd-theses/hertel/dissertation_Hertel.pdf Hertel PhD thesis]</ref>
|200 <ref name="Drachmann" />
|?
|-
|CSAR4
|400
|?
|?
|?
|335 <ref name="Ansaloni" />
|-
|CSAR9
|?
|?
|?
|?
|335 <ref name="Ansaloni" />
|-
|CSAR13
|?
|?
|?
|?
|?
|-
|50k+A4
|?
|?
|?
|630
|?
|-
|}


EL9: 420uC/cm2 base dose/45s MIBK:IPA develop with IPA rinse
* GaAs: Uniform clearing
* InP: Uniform clearing
* InAs: Uniform clearing
* Si: Optimal contrast


==InP==
== References ==
A4.5: 700 uC/cm2 Uniform clearing Beamer base dose/60s MIBK:IPA dev/10s IPA
<references />


==InAs==
==Si==
CSAR 9: 430 uC/cm2 optimal contrast


A4: 1000 uC/cm2
== Note ==
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.
== Experimental ==


A6: 1200 uC/cm2 (or 1000 uC/cm2 with longer development? To be tested)


= 100  kV =
* Dose density matrix for small and large spot size.
==GaAs==
* Measure CD as a function of dose and density for the two spot sizes.
A6: --- uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK:IPA/10s IPA
* Intersection of the two plots, for a given density gives isofocal dose.
* Convert doses to dose factors, given that 0% iso-dose factor == PEC_df <sub>0%</sub>
* Base dose == isofocal dose <sub>0%</sub> / PEC_df <sub>0%</sub>
* For density larger than 0%, predicted dose factor = (1+η)/(1+η*ρ*(1+φ/100))
** 1+η = PEC_df <sub>0%</sub>
** Fit experimental isofocal dose factors and predicted dose factor by varying psi


CSAR 13: **480uC/cm2 base dose/ 24s O-Xylene/5s conc. MIBK develop/IPA rinse
100 kV:
**- likely overdosed


EL9: 380 uC/cm2 base dose/ 45s MIBK:IPA/ 10s IPA rinse
Si: 897 uC/cm2 and phi = 75%


==InP==
125 kV:
A4.5: 550 uC/cm2 Uniform clearing Beamer base dose/60s MIBK:IPA dev/10s IPA


==InAs==
InP: 572 uC/cm2 and phi = 41%
==Si==
CSAR 9: 400 uC/cm2 optimal contrast/ 30s O-Xylene/5s conc. MIBK/IPA


A4: 800 uC/cm2/40s MIBK:IPA dev./10s IPA
InAs: 589 uC/cm2 and phi = 33%


A6: 1000 uC/cm2/60s MIBK:IPA dev./10s IPA
Si: 906 uC/cm2 and phi = 45%
 
GaAs:752 uC/cm2 and phi = 39%
 
{| class="wikitable"
|+100 kV
|-
|[[Resists|Resist]]
|Si (μC/cm<sup>2</sup>) '''/''' φ
|InAs (μC/cm<sup>2</sup>) '''/''' φ
|InP (μC/cm<sup>2</sup>) '''/''' φ
|GaAs (μC/cm<sup>2</sup>) '''/''' φ
|SiGe (μC/cm<sup>2</sup>) '''/''' φ
|-
|A2
|?
|?
|?
|?
|?
|-
|A4
|897 / 75%
|?
|?
|?
|?
|-
|A6
|?
|?
|?
|?
|?
|-
|El6
|?
|?
|?
|?
|?
|-
|El9
|?
|?
|?
|?
|?
|-
|CSAR4
|?
|?
|?
|?
|?
|-
|CSAR9
|?
|?
|?
|?
|?
|-
|CSAR13
|?
|?
|?
|?
|?
|-
|50k+A4
|?
|?
|?
|?
|?
|-
|}
 
 
{| class="wikitable"
|+125 kV
|-
|[[Resists|Resist]]
|Si (μC/cm<sup>2</sup>) '''/''' φ
|InAs (μC/cm<sup>2</sup>) '''/''' φ
|InP (μC/cm<sup>2</sup>) '''/''' φ
|GaAs (μC/cm<sup>2</sup>) '''/''' φ
|SiGe (μC/cm<sup>2</sup>) '''/''' φ
|-
|A2
|?
|?
|?
|?
|?
|-
|A4
|906/ 45%
|589/ 33%
|572/ 41%
|752/ 39%
|?
|-
|A6
|?
|?
|?
|?
|?
|-
|El6
|?
|?
|?
|?
|?
|-
|El9
|?
|?
|?
|?
|?
|-
|CSAR4
|?
|?
|?
|?
|?
|-
|CSAR9
|?
|?
|?
|?
|?
|-
|CSAR13
|?
|?
|?
|?
|?
|-
|50k+A4
|?
|?
|?
|?
|?
|-
|}
 
[[Category:Fabrication]]

Latest revision as of 18:23, 10 April 2022

125 kV
Resist Si InAsUC InPUC GaAsUC SiGe
A2 1000 700 ? ? ?
A4 1200-1300 [1] 700 900 [2] 630 ?
A6 1200 800 900-920 [2] 760 ?
EL6 ? ? ? ? ?
EL9 450-500 [1] ? 280 [2] 420 ?
CSAR4 430 ? ? ? ?
CSAR9 500 [1] ? ? ? ?
CSAR13 430 [1] ? ? 350 ?
50k+A4 ? ? 500 [2] 745 ?
100 kV
Resist Si InAsUC InPUC GaAsUC SiGe
A2 900 ? 620 [3] ? 1500-1600 [4]
A4 900 640-680 [5] 608-640 [3] 630 900 [4]
A6 1000 ? ? 670 ?
EL6 ? ? ? ? ?
EL9 ? 250 380 [2] 200 [3] ?
CSAR4 400 ? ? ? 335 [4]
CSAR9 ? ? ? ? 335 [4]
CSAR13 ? ? ? ? ?
50k+A4 ? ? ? 630 ?
  • GaAs: Uniform clearing
  • InP: Uniform clearing
  • InAs: Uniform clearing
  • Si: Optimal contrast

References

  1. ↑ 1.0 1.1 1.2 1.3 Kringhøj PhD thesis
  2. ↑ 2.0 2.1 2.2 2.3 2.4 Hertel PhD thesis
  3. ↑ 3.0 3.1 3.2 Drachmann PhD thesis
  4. ↑ 4.0 4.1 4.2 4.3 Ansaloni PhD thesis
  5. ↑ Whiticar PhD thesis


Note

Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.

Experimental

  • Dose density matrix for small and large spot size.
  • Measure CD as a function of dose and density for the two spot sizes.
  • Intersection of the two plots, for a given density gives isofocal dose.
  • Convert doses to dose factors, given that 0% iso-dose factor == PEC_df 0%
  • Base dose == isofocal dose 0% / PEC_df 0%
  • For density larger than 0%, predicted dose factor = (1+η)/(1+η*ρ*(1+φ/100))
    • 1+η = PEC_df 0%
    • Fit experimental isofocal dose factors and predicted dose factor by varying psi

100 kV:

Si: 897 uC/cm2 and phi = 75%

125 kV:

InP: 572 uC/cm2 and phi = 41%

InAs: 589 uC/cm2 and phi = 33%

Si: 906 uC/cm2 and phi = 45%

GaAs:752 uC/cm2 and phi = 39%

100 kV
Resist Si (μC/cm2) / φ InAs (μC/cm2) / φ InP (μC/cm2) / φ GaAs (μC/cm2) / φ SiGe (μC/cm2) / φ
A2 ? ? ? ? ?
A4 897 / 75% ? ? ? ?
A6 ? ? ? ? ?
El6 ? ? ? ? ?
El9 ? ? ? ? ?
CSAR4 ? ? ? ? ?
CSAR9 ? ? ? ? ?
CSAR13 ? ? ? ? ?
50k+A4 ? ? ? ? ?


125 kV
Resist Si (μC/cm2) / φ InAs (μC/cm2) / φ InP (μC/cm2) / φ GaAs (μC/cm2) / φ SiGe (μC/cm2) / φ
A2 ? ? ? ? ?
A4 906/ 45% 589/ 33% 572/ 41% 752/ 39% ?
A6 ? ? ? ? ?
El6 ? ? ? ? ?
El9 ? ? ? ? ?
CSAR4 ? ? ? ? ?
CSAR9 ? ? ? ? ?
CSAR13 ? ? ? ? ?
50k+A4 ? ? ? ? ?
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