Doses

125 kV

	Si	InAsUC	InPUC	GaAsUC	SiGe
A2	1000	700	?	?	?
A4	1000	700	?	630	?
A6	1200	?	?	760	?
El6	?	?	?	?	?
El9	?	?	?	420	?
CSAR4	430	?	?	?	?
CSAR9	?	?	?	?	?
CSAR13	450	?	?	350	?
50k+A4	?	?	?	745	?

100 kV

	Si	InAsUC	InPUC	GaAsUC	SiGe
A2	900	?	500	?	?
A4	900	?	500	630	?
A6	1000	?	?	670	?
El6	?	?	?	?	?
El9	?	?	?	?	?
CSAR4	400	?	?	?	?
CSAR9	?	?	?	?	?
CSAR13	?	?	?	?	?
50k+A4	?	?	?	630	?

GaAs

Uniform clearing

InP

Uniform clearing

InAs

Uniform clearing

Si

Optimal contrast

Note

Base dose does not change with resist thickness, developing time does. If the developing time is fixed, say to 60s, a thinner layer of resist will need a "base dose", since it's being over developed.