Doses

125 kV

	Si	InAsUC	InPUC	GaAsUC	SiGe
A2	1000	700	?	?	?
A4	1000	700	?	?	?
A6	1200	?	?	?	?
El6	?	?	?	?	?
El9	?	?	?	420	?
CSAR4	430	?	?	?	?
CSAR9	?	?	?	?	?
CSAR13	450	?	?	350	?

100 kV

	Si	InAsUC	InPUC	GaAsUC	SiGe
A2	900	?	500	?	?
A4	900	?	500	?	?
A6	1000	?	?	760	?
El6	?	?	?	?	?
El9	?	?	?	?	?
CSAR4	400	?	?	?	?
CSAR9	?	?	?	?	?
CSAR13	?	?	?	?	?

125 kV

GaAs

A6: 742 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA

CSAR13: 420uC/cm2 base dose/24s o-xylene/5s conc. MIBK develop with IPA rinse

EL9: 420uC/cm2 base dose/45s MIBK:IPA develop with IPA rinse

InP

A4.5: 700 uC/cm2 Uniform clearing Beamer base dose/60s MIBK:IPA dev/10s IPA

Si

CSAR 9: 430 uC/cm2 optimal contrast

A4: 1000 uC/cm2

A6: 1200 uC/cm2 (or 1000 uC/cm2 with longer development? To be tested)

100 kV

GaAs

A6: 760 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA

100 kV

GaAs

A6: --- uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK:IPA/10s IPA

CSAR 13: 480uC/cm2 base dose (likely overdosed)/ 24s o-Xylene/5s conc. MIBK develop/IPA rinse

EL9: 380 uC/cm2 base dose/ 45s MIBK:IPA/ 10s IPA rinse

InP

A4.5: 550 uC/cm2 Uniform clearing Beamer base dose/60s MIBK:IPA dev/10s IPA

Si

CSAR 9: 400 uC/cm2 optimal contrast/ 30s O-Xylene/5s conc. MIBK/IPA

A4: 800 uC/cm2/40s MIBK:IPA dev./10s IPA

A6: 1000 uC/cm2/60s MIBK:IPA dev./10s IPA