125 kV
|
|
Si
|
InAsUC
|
InPUC
|
GaAsUC
|
SiGe
|
| A2
|
1000
|
700
|
?
|
?
|
?
|
| A4
|
1000
|
700
|
?
|
630
|
?
|
| A6
|
1200
|
?
|
?
|
760
|
?
|
| El6
|
?
|
?
|
?
|
?
|
?
|
| El9
|
?
|
?
|
?
|
420
|
?
|
| CSAR4
|
430
|
?
|
?
|
?
|
?
|
| CSAR9
|
?
|
?
|
?
|
?
|
?
|
| CSAR13
|
450
|
?
|
?
|
350
|
?
|
| 50k+A4
|
?
|
?
|
?
|
745
|
?
|
100 kV
|
|
Si
|
InAsUC
|
InPUC
|
GaAsUC
|
SiGe
|
| A2
|
900
|
?
|
500
|
?
|
?
|
| A4
|
900
|
?
|
500
|
630
|
?
|
| A6
|
1000
|
?
|
?
|
670
|
?
|
| El6
|
?
|
?
|
?
|
?
|
?
|
| El9
|
?
|
?
|
?
|
?
|
?
|
| CSAR4
|
400
|
?
|
?
|
?
|
?
|
| CSAR9
|
?
|
?
|
?
|
?
|
?
|
| CSAR13
|
?
|
?
|
?
|
?
|
?
|
| 50k+A4
|
?
|
?
|
?
|
630
|
?
|
- GaAs: Uniform clearing
- InP: Uniform clearing
- InAs: Uniform clearing
- Si: Optimal contrast
Note
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.