Etching: Difference between revisions
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For dry etching, you can use [[AJA systems]] or [[Plassys Evaporator]]. AJA1 and Plassys have an Ion gun for DC Kaufman milling, and in AJA2 you can do RF milling. | For dry etching, you can use [[AJA systems]] or [[Plassys Evaporator]]. AJA1 and Plassys have an Ion gun for DC Kaufman milling, and in AJA2 you can do RF milling. | ||
==Erch rate with AJA1== | ==Erch rate with AJA1== | ||
Based on the logs, from Jan 2023 the tool has been used with the following conditions: | |||
* Volts: 100, 200, 220, 300, 600, 800 V | |||
* Pressure: 1, 1.1, 0.4, 0.5 mTorr | |||
* Argon flow: 15 sccm | |||
* 5 mins discharge & 2 mins warm up | |||
* Argon flow: 15 sccm. | * Argon flow: 15 sccm. | ||
* pressure: 1 mTorr. | * pressure: 1 mTorr. | ||
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[[File:AJA1_Al.jpg|500px]] | [[File:AJA1_Al.jpg|500px]] | ||
==Erch rate with AJA2== | ==Erch rate with AJA2== | ||
Revision as of 12:24, 3 October 2026
Wet etching
https://transene.com/etch-compatibility/ Data comparing different bottles of transene type D: Etching on Si, InAs (001), and GaAs(001)
Etch rate with MIF321
The Al/SiO2 chips are developed in MIF321 for 50 sec, before etching.
| Time [seconds] | 0 | 3 | 6 | 9 | 12 | 15 |
| Δh [nm] | 10 | 25 | 35 | 40 | 50 | 60 |
Etch rate with BHF
etching ALD HfOx
Blank Si samples with HfOx grown locally by ALD. The sample was etched for 2 mins and the film was measured by ellipsometry. Then, repeated the etch 3 times.
| Time [minutes] | 0 | 2 | 4 | 6 |
| h [nm] | 21.53 | 17.18 | 12.18 | 7.55 |
Dry etching
For dry etching, you can use AJA systems or Plassys Evaporator. AJA1 and Plassys have an Ion gun for DC Kaufman milling, and in AJA2 you can do RF milling.
Erch rate with AJA1
Based on the logs, from Jan 2023 the tool has been used with the following conditions:
- Volts: 100, 200, 220, 300, 600, 800 V
- Pressure: 1, 1.1, 0.4, 0.5 mTorr
- Argon flow: 15 sccm
- 5 mins discharge & 2 mins warm up
- Argon flow: 15 sccm.
- pressure: 1 mTorr.
- Angle: 90 degree tilt , i.e. head on.
- Milling duration: 2 minutes warm-up followed by 4 minutes milling.
Kaufmann settings
- cathode Amps = 7.0
- Discharge Volts = 40.0
- Discharge Amps = 0.5
- Beam Volts = 300.0
- beam Amps = 23.0
- Accelerator Volts = 120.0
- Accelerator Amps = 10.0
- Emission mAmps = 46.0
- Neutralizer Amps = 11.0
Gold
| Time [minutes] | 1 | 3 | 5 | 7 |
| Δh [nm] | 9.2 | 28.4 | 46.9 | 46.5 |
Aluminum
| Time [minutes] | 1 | 3 | 5 | 7 |
| Δh [nm] | 2.5 | 7.7 | 13.4 | 21.3 |
Erch rate with AJA2
September 2026
Based on the logs, from Aug 2023 the tool has been used with the following conditions:
- 30 sccm, 18 mTorr and (25 or 15) W
The materials milled were: Si, SiOx, SiGe InAs, InSb, InAsSb, InP, GaAs, Al, AlOx, NbTiN, TiN, NbN, Ta, EuS, STO/LAO
| Power | Pressure | Flow | Time | Δh |
|---|---|---|---|---|
| 15 W | 18 mTorr | 30 sccm | 10 mins | 1.26 nm |
| 25 W | 18 mTorr | 30 sccm | 10 mins | 5.38 nm |
August 2016
Milling of SiOx on Si for 5 minutes at different pressures
| Power [W] | Δh [nm] | |||
|---|---|---|---|---|
| 6 mTorr | 12 mTorr | 18 mTorr | 24 mTorr | |
| 50 | 2.7 | 3.0 | 5.5 | 3.7 |
| 100 | 9.8 | 13.6 | 10.4 | 17.3 |
| 150 | 13.5 | 16.2 | 47.3 | 35.1 |
| 200 | 24.3 | 35.9 | 57.0 | 53.1 |
| 250 | 38.3 | 47.9 | 77.3 | 72.7 |
Data from Shiv, qdevwiki Aug 2016