Etching: Difference between revisions
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=Dry etching= | =Dry etching= | ||
For dry etching, you can use [[AJA systems]] or [[Plassys Evaporator]]. AJA1 and Plassys have an Ion gun for DC milling, and in AJA2 you can do RF milling. | For dry etching, you can use [[AJA systems]] or [[Plassys Evaporator]]. AJA1 and Plassys have an Ion gun for DC Kaufman milling, and in AJA2 you can do RF milling. | ||
==Erch rate with AJA2== | ==Erch rate with AJA2== | ||
Milling of SiOx on Si for 5 minutes at different pressures | Milling of SiOx on Si for 5 minutes at different pressures | ||
Revision as of 12:11, 8 September 2025
Wet etching
https://transene.com/etch-compatibility/ Data comparing different bottles of transene type D: Etching on Si, InAs (001), and GaAs(001)
Etch rate with MIF321
The Al/SiO2 chips are developed in MIF321 for 50 sec, before etching.
| Time [seconds] | 0 | 3 | 6 | 9 | 12 | 15 |
| Δh [nm] | 10 | 25 | 35 | 40 | 50 | 60 |
Dry etching
For dry etching, you can use AJA systems or Plassys Evaporator. AJA1 and Plassys have an Ion gun for DC Kaufman milling, and in AJA2 you can do RF milling.
Erch rate with AJA2
Milling of SiOx on Si for 5 minutes at different pressures
| Power [W] | Δh [nm] | |||
|---|---|---|---|---|
| 6 mTorr | 12 mTorr | 18 mTorr | 24 mTorr | |
| 50 | 2.7 | 3.0 | 5.5 | 3.7 |
| 100 | 9.8 | 13.6 | 10.4 | 17.3 |
| 150 | 13.5 | 16.2 | 47.3 | 35.1 |
| 200 | 24.3 | 35.9 | 57.0 | 53.1 |
| 250 | 38.3 | 47.9 | 77.3 | 72.7 |
Data from Shiv, qdevwiki Aug 2016