Doses: Difference between revisions
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== Note == | == Note == | ||
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed. | Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed. | ||
== Experimental == | |||
125 kV: | |||
InP: 607 uC/cm2 and phi = 35% | |||
InAs: | |||
Si: 906 uC/cm2 and phi = 45% | |||
GaAs:752 uC/cm2 and phi = 39% | |||
Revision as of 14:35, 30 July 2018
| Si | InAsUC | InPUC | GaAsUC | SiGe | |
| A2 | 1000 | 700 | ? | ? | ? |
| A4 | 1000 | 700 | ? | 630 | ? |
| A6 | 1200 | ? | ? | 760 | ? |
| El6 | ? | ? | ? | ? | ? |
| El9 | ? | ? | ? | 420 | ? |
| CSAR4 | 430 | ? | ? | ? | ? |
| CSAR9 | ? | ? | ? | ? | ? |
| CSAR13 | 450 | ? | ? | 350 | ? |
| 50k+A4 | ? | ? | ? | 745 | ? |
| Si | InAsUC | InPUC | GaAsUC | SiGe | |
| A2 | 900 | ? | 300 | ? | ? |
| A4 | 900 | ? | 500 | 630 | ? |
| A6 | 1000 | ? | ? | 670 | ? |
| El6 | ? | ? | ? | ? | ? |
| El9 | ? | ? | ? | ? | ? |
| CSAR4 | 400 | ? | ? | ? | ? |
| CSAR9 | ? | ? | ? | ? | ? |
| CSAR13 | ? | ? | ? | ? | ? |
| 50k+A4 | ? | ? | ? | 630 | ? |
- GaAs: Uniform clearing
- InP: Uniform clearing
- InAs: Uniform clearing
- Si: Optimal contrast
Note
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.
Experimental
125 kV: InP: 607 uC/cm2 and phi = 35% InAs: Si: 906 uC/cm2 and phi = 45% GaAs:752 uC/cm2 and phi = 39%