Doses: Difference between revisions
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* GaAs: Uniform clearing | |||
Uniform clearing | * InP: Uniform clearing | ||
* InAs: Uniform clearing | |||
* Si: Optimal contrast | |||
Uniform clearing | |||
Uniform clearing | |||
Optimal contrast | |||
== Note == | == Note == | ||
Base dose does not change with resist thickness, developing time does. If the developing time is fixed, say to 60s, a thinner layer of resist will need a "base dose", since it's being over developed. | Base dose does not change with resist thickness, developing time does. If the developing time is fixed, say to 60s, a thinner layer of resist will need a "base dose", since it's being over developed. | ||
Revision as of 21:51, 22 June 2018
| Si | InAsUC | InPUC | GaAsUC | SiGe | |
| A2 | 1000 | 700 | ? | ? | ? |
| A4 | 1000 | 700 | ? | 630 | ? |
| A6 | 1200 | ? | ? | 760 | ? |
| El6 | ? | ? | ? | ? | ? |
| El9 | ? | ? | ? | 420 | ? |
| CSAR4 | 430 | ? | ? | ? | ? |
| CSAR9 | ? | ? | ? | ? | ? |
| CSAR13 | 450 | ? | ? | 350 | ? |
| 50k+A4 | ? | ? | ? | 745 | ? |
| Si | InAsUC | InPUC | GaAsUC | SiGe | |
| A2 | 900 | ? | 500 | ? | ? |
| A4 | 900 | ? | 500 | 630 | ? |
| A6 | 1000 | ? | ? | 670 | ? |
| El6 | ? | ? | ? | ? | ? |
| El9 | ? | ? | ? | ? | ? |
| CSAR4 | 400 | ? | ? | ? | ? |
| CSAR9 | ? | ? | ? | ? | ? |
| CSAR13 | ? | ? | ? | ? | ? |
| 50k+A4 | ? | ? | ? | 630 | ? |
- GaAs: Uniform clearing
- InP: Uniform clearing
- InAs: Uniform clearing
- Si: Optimal contrast
Note
Base dose does not change with resist thickness, developing time does. If the developing time is fixed, say to 60s, a thinner layer of resist will need a "base dose", since it's being over developed.