Doses: Difference between revisions
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==GaAs== | ==GaAs== | ||
Uniform clearing | Uniform clearing | ||
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Optimal contrast | Optimal contrast | ||
= | == Note == | ||
Base dose does not change with resist thickness, developing time does. If the developing time is fixed, say to 60s, a thinner layer of resist will need a "base dose", since it's being over developed. | |||
Revision as of 21:48, 22 June 2018
| Si | InAsUC | InPUC | GaAsUC | SiGe | |
| A2 | 1000 | 700 | ? | ? | ? |
| A4 | 1000 | 700 | ? | 630 | ? |
| A6 | 1200 | ? | ? | 760 | ? |
| El6 | ? | ? | ? | ? | ? |
| El9 | ? | ? | ? | 420 | ? |
| CSAR4 | 430 | ? | ? | ? | ? |
| CSAR9 | ? | ? | ? | ? | ? |
| CSAR13 | 450 | ? | ? | 350 | ? |
| 50k+A4 | ? | ? | ? | 745 | ? |
| Si | InAsUC | InPUC | GaAsUC | SiGe | |
| A2 | 900 | ? | 500 | ? | ? |
| A4 | 900 | ? | 500 | 630 | ? |
| A6 | 1000 | ? | ? | 670 | ? |
| El6 | ? | ? | ? | ? | ? |
| El9 | ? | ? | ? | ? | ? |
| CSAR4 | 400 | ? | ? | ? | ? |
| CSAR9 | ? | ? | ? | ? | ? |
| CSAR13 | ? | ? | ? | ? | ? |
| 50k+A4 | ? | ? | ? | 630 | ? |
GaAs
Uniform clearing
InP
Uniform clearing
InAs
Uniform clearing
Si
Optimal contrast
Note
Base dose does not change with resist thickness, developing time does. If the developing time is fixed, say to 60s, a thinner layer of resist will need a "base dose", since it's being over developed.