Doses: Difference between revisions
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Revision as of 14:23, 7 May 2018
125 kV
| Si | InAsUC | InPUC | GaAsUC | SiGe | |
| A2 | 1000 | 700 | ? | 700 | ? |
| A4 | 1000 | 700 | ? | 700 | ? |
| A6 | 1200 | ? | ? | ? | ? |
| El6 | ? | ? | ? | ? | ? |
| El9 | ? | ? | ? | 420 | ? |
| CSAR4 | 430 | ? | ? | ? | ? |
| CSAR9 | ? | ? | ? | ? | ? |
| CSAR13 | ? | ? | ? | ? | ? |
| Si | InAsUC | InPUC | GaAsUC | SiGe | |
| A2 | 900 | ? | ? | ? | ? |
| A4 | 900 | ? | ? | ? | ? |
| A6 | 1000 | ? | ? | 760 | ? |
| El6 | ? | ? | ? | ? | ? |
| El9 | ? | ? | ? | ? | ? |
| CSAR4 | 400 | ? | ? | ? | ? |
| CSAR9 | ? | ? | ? | ? | ? |
| CSAR13 | ? | ? | ? | ? | ? |
GaAs
A6: 742 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA
CSAR13: 420uC/cm2 base dose/24s o-xylene/5s conc. MIBK develop with IPA rinse
EL9: 420uC/cm2 base dose/45s MIBK:IPA develop with IPA rinse
InP
A4.5: 700 uC/cm2 Uniform clearing Beamer base dose/60s MIBK:IPA dev/10s IPA
InAs
Si
CSAR 9: 430 uC/cm2 optimal contrast
A4: 1000 uC/cm2
A6: 1200 uC/cm2 (or 1000 uC/cm2 with longer development? To be tested)
100 kV
GaAs
A6: --- uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK:IPA/10s IPA
CSAR 13: 480uC/cm2 base dose (likely overdosed)/ 24s o-Xylene/5s conc. MIBK develop/IPA rinse
EL9: 380 uC/cm2 base dose/ 45s MIBK:IPA/ 10s IPA rinse
InP
A4.5: 550 uC/cm2 Uniform clearing Beamer base dose/60s MIBK:IPA dev/10s IPA
InAs
Si
CSAR 9: 400 uC/cm2 optimal contrast/ 30s O-Xylene/5s conc. MIBK/IPA
A4: 800 uC/cm2/40s MIBK:IPA dev./10s IPA
A6: 1000 uC/cm2/60s MIBK:IPA dev./10s IPA