Doses: Difference between revisions

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== 125  kV ==
= 125  kV =
=GaAs=
==GaAs==
A6: 742 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA
A6: 742 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA




=InP=
==InP==
=InAs=
==InAs==
=Si=
==Si==
CSAR 9: 430 uC/cm2 optimal contrast
CSAR 9: 430 uC/cm2 optimal contrast


Line 12: Line 12:


A6: 1200 uC/cm2 (or 1000 uC/cm2 with longer development? To be tested)
A6: 1200 uC/cm2 (or 1000 uC/cm2 with longer development? To be tested)
= 100  kV =
==GaAs==
A6: --- uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA
==InP==
==InAs==
==Si==
CSAR 9: 400 uC/cm2 optimal contrast/ 30s O-Xylene/5s conc. MIBK/IPA
A4: 800 uC/cm2/40s MIBK:IPA dev./10s IPA
A6: 1000 uC/cm2/60s MIBK:IPA dev./10s IPA

Revision as of 11:48, 1 May 2018

125 kV

GaAs

A6: 742 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA


InP

InAs

Si

CSAR 9: 430 uC/cm2 optimal contrast

A4: 1000 uC/cm2

A6: 1200 uC/cm2 (or 1000 uC/cm2 with longer development? To be tested)

100 kV

GaAs

A6: --- uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA


InP

InAs

Si

CSAR 9: 400 uC/cm2 optimal contrast/ 30s O-Xylene/5s conc. MIBK/IPA

A4: 800 uC/cm2/40s MIBK:IPA dev./10s IPA

A6: 1000 uC/cm2/60s MIBK:IPA dev./10s IPA