Doses: Difference between revisions
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= 125 kV = | |||
=GaAs= | ==GaAs== | ||
A6: 742 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA | A6: 742 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA | ||
=InP= | ==InP== | ||
=InAs= | ==InAs== | ||
=Si= | ==Si== | ||
CSAR 9: 430 uC/cm2 optimal contrast | CSAR 9: 430 uC/cm2 optimal contrast | ||
Line 12: | Line 12: | ||
A6: 1200 uC/cm2 (or 1000 uC/cm2 with longer development? To be tested) | A6: 1200 uC/cm2 (or 1000 uC/cm2 with longer development? To be tested) | ||
= 100 kV = | |||
==GaAs== | |||
A6: --- uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA | |||
==InP== | |||
==InAs== | |||
==Si== | |||
CSAR 9: 400 uC/cm2 optimal contrast/ 30s O-Xylene/5s conc. MIBK/IPA | |||
A4: 800 uC/cm2/40s MIBK:IPA dev./10s IPA | |||
A6: 1000 uC/cm2/60s MIBK:IPA dev./10s IPA |
Revision as of 11:48, 1 May 2018
125 kV
GaAs
A6: 742 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA
InP
InAs
Si
CSAR 9: 430 uC/cm2 optimal contrast
A4: 1000 uC/cm2
A6: 1200 uC/cm2 (or 1000 uC/cm2 with longer development? To be tested)
100 kV
GaAs
A6: --- uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA
InP
InAs
Si
CSAR 9: 400 uC/cm2 optimal contrast/ 30s O-Xylene/5s conc. MIBK/IPA
A4: 800 uC/cm2/40s MIBK:IPA dev./10s IPA
A6: 1000 uC/cm2/60s MIBK:IPA dev./10s IPA