Etching

Wet etching

https://transene.com/etch-compatibility/ Data comparing different bottles of transene type D: Etching on Si, InAs (001), and GaAs(001)

Etch rate with MIF321

The Al/SiO2 chips are developed in MIF321 for 50 sec, before etching.

Time [seconds]	0	3	6	9	12	15
Δh [nm]	10	25	35	40	50	60

Dry etching

For dry etching, you can use AJA systems or Plassys Evaporator. AJA1 and Plassys have an Ion gun for DC milling, and in AJA2 you can do RF milling.

Erch rate with AJA2

Milling of SiOx on Si for 5 minutes at different pressures

6 mTorr

Power [W]	50	100	150	200	250
Δh [nm]	2.7	9.8	13.5	24.3	38.3

12 mTorr

Power [W]	50	100	150	200	250
Δh [nm]	3.0	13.6	16.2	35.9	47.9

18 mTorr

Power [W]	50	100	150	200	250
Δh [nm]	5.5	10.4	47.3	57.0	77.3

24 mTorr

Power [W]	50	100	150	200	250
Δh [nm]	3.7	17.3	35.1	53.1	72.7

6 mTorr

Power [W]	50	100	150	200	250
Δh [nm]	2.7	9.8	13.5	24.3	38.3

12 mTorr

Power [W]	50	100	150	200	250
Δh [nm]	3.0	13.6	16.2	35.9	47.9

18 mTorr

Power [W]	50	100	150	200	250
Δh [nm]	5.5	10.4	47.3	57.0	77.3

24 mTorr

Power [W]	Δh [nm]
	6 mTorr	12 mTorr	18 mTorr	24 mTorr
50	2.7	3.0	5.5	3.7
100	9.8	13.6	10.4	17.3
150	13.5	16.2	47.3	35.1
200	24.3	35.9	57.0	53.1
250	38.3	47.9	77.3	72.7