Plassys Evaporator: Difference between revisions
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== Currently loaded materials == | == Currently loaded materials == | ||
{| | {| class="wikitable" | ||
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! Crucible position!! Material!! Comment | |||
|- | |- | ||
| 1 || Ti || Currently In Use | |||
|- | |- | ||
| | | 2 || - || Empty | ||
| | |||
| | |||
|- | |- | ||
| | | 3 || -|| Empty | ||
| | |||
| | |||
|- | |- | ||
| | | 4 || Al || NBI crucible | ||
| Al | |||
| | |||
|- | |- | ||
| | | 5 || Al || NQCP crucible | ||
| Al | |||
| | |||
|} | |} | ||
Revision as of 12:09, 9 September 2025
Overview
Physical vapor deposition tool of aluminum via e-beam evaporation for Josephson junction fabrication. It also provides an ion gun for surface preparation and etching purposes. The system has the capability of in-situ oxidation .
Film Quality : Surface roughness - 1.6 nm for 100nm thick film ( scan area 2 um /AFM Analysis ( June 2023)
Currently loaded materials
| Crucible position | Material | Comment |
|---|---|---|
| 1 | Ti | Currently In Use |
| 2 | - | Empty |
| 3 | - | Empty |
| 4 | Al | NBI crucible |
| 5 | Al | NQCP crucible |
Substrates allowed
Silicon and Sapphire only