Cambridge ALD: Difference between revisions

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added a small table of available processes, updated infobox
fixed HfOx precursor, precursor images, references are now through DOI, updated infobox
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|description = Atomic layer deposition system
|description = Atomic layer deposition system
|location = Cleanrooms 1 & 2
|location = Cleanrooms 1 & 2
|primary = Shiv
|primary = Karolis
|secondary = Pétur
|secondary = Shiv
|limits = TBD
|computer = TBD
|manual = TBD
}}
}}


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! Deposited material !! Precursor !! ALD1 !! ALD2 !! Ref.
! Deposited material !! Precursor !! ALD1 !! ALD2 !! Ref.
|-
|-
| Hafnium oxide (HfOx, HfO<sub>2</sub>)|| <div class="toccolours mw-collapsible mw-collapsed width:400px" style="width:300px"> TEMAH <div class="mw-collapsible-content">tetrakis(ethylmethylamino)hafnium <br/> [(CH<sub>3</sub>)(C<sub>2</sub>H<sub>5</sub>)N]<sub>4</sub>Hf <br/> [[File:TEMAH.png|246px]]</div></div> || style="background-color: #c6e0b4" | Yes || style="background-color: #c6e0b4" | Yes || [http://jes.ecsdl.org/content/151/8/F189]
| Hafnium oxide (HfOx, HfO<sub>2</sub>)|| <div class="toccolours mw-collapsible mw-collapsed width:400px" style="width:300px"> TDMAH <div class="mw-collapsible-content">tetrakis(dimethylamino)hafnium <br/> [(CH<sub>3</sub>)<sub>2</sub>N]<sub>4</sub>Hf <br/> [[File:TDMAH.png|246px]]</div></div> || style="background-color: #c6e0b4" | Yes || style="background-color: #c6e0b4" | Yes || [https://doi.org/10.1016/j.tsf.2005.05.050]
|-
|-
| Aluminum oxide (AlOx, Al<sub>2</sub>O<sub>3</sub>) || <div class="toccolours mw-collapsible mw-collapsed" style="width:300px> TMA <div class="mw-collapsible-content">trimethylaluminum <br/> (CH<sub>3</sub>)<sub>3</sub>Al <br/> [[File:TMA.png|290px]]</div></div> || style="background-color: #c6e0b4" | Yes || style="background-color: #ff9f9f" | No || [https://link.springer.com/article/10.1134%2F1.1626763]
| Aluminum oxide (AlOx, Al<sub>2</sub>O<sub>3</sub>) || <div class="toccolours mw-collapsible mw-collapsed" style="width:300px> TMA <div class="mw-collapsible-content">trimethylaluminum <br/> (CH<sub>3</sub>)<sub>3</sub>Al <br/> [[File:TMA.png|290px]]</div></div> || style="background-color: #c6e0b4" | Yes || style="background-color: #ff9f9f" | No || [https://doi.org/10.1134/1.1626763]
|}
|}

Revision as of 15:07, 12 February 2019

Cambridge ALD
Picture of Cambridge ALD text
Essentials
Full nameSavannah S100 (gen. 1)
ManufacturerCambridge NanoTech (Veeco)
DescriptionAtomic layer deposition system
LocationCleanrooms 1 & 2
Responsibility
PrimaryKarolis
SecondaryShiv

Available processes

Deposited material Precursor ALD1 ALD2 Ref.
Hafnium oxide (HfOx, HfO2)
TDMAH
tetrakis(dimethylamino)hafnium
[(CH3)2N]4Hf
Yes Yes [1]
Aluminum oxide (AlOx, Al2O3)
TMA
trimethylaluminum
(CH3)3Al
Yes No [2]
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