Doses: Difference between revisions

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updated dose table with values from PhD theses
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|A4
|A4
|1000
|1200-1300 <ref name="Kringhoej" />
|700
|700
|?
|900 <ref name="Hertel" />
|630
|630
|?
|?
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|1200
|1200
|?
|?
|?
|900-920 <ref name="Hertel" />
|760
|760
|?
|?
|-
|-
|El6
|EL6
|?
|?
|?
|?
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|?
|?
|-
|-
|El9
|EL9
|?
|450-500 <ref name="Kringhoej">[https://nbi.ku.dk/english/theses/phd-theses/anders-kringhoej/Anders_Kringhoej_PhD.pdf Kringhøj PhD thesis]</ref>
|?
|?
|?
|280 <ref name="Hertel" />
|420
|420
|?
|?
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|CSAR9
|CSAR9
|?
|500 <ref name="Kringhoej" />
|?
|?
|?
|?
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|CSAR13
|CSAR13
|450
|430 <ref name="Kringhoej" />
|?
|?
|?
|?
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|?
|?
|?
|?
|?
|500 <ref name="Hertel" />
|745
|745
|?
|?
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|900
|900
|?
|?
|300
|620 <ref name="Drachmann" />
|?
|?
|?
|1500-1600 <ref name="Ansaloni" />
|-
|-
|A4
|A4
|900
|900
|?
|640-680 <ref name="Whiticar">[https://nbi.ku.dk/english/theses/phd-theses/alexander-m-whiticar/Whiticar_thesis.pdf Whiticar PhD thesis]</ref>
|500
|608-640 <ref name="Drachmann">[https://nbi.ku.dk/english/theses/phd-theses/asbjorn-cliff-drachmann/Drachmann_PhD_Thesis.pdf/Drachmann_PhD_Thesis.pdf Drachmann PhD thesis]</ref>
|630
|630
|?
|900 <ref name="Ansaloni">[https://nbi.ku.dk/english/theses/phd-theses/fabio-ansaloni/thesis_Ansaloni.pdf Ansaloni PhD thesis]</ref>
|-
|-
|A6
|A6
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|?
|?
|-
|-
|El6
|EL6
|?
|?
|?
|?
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|?
|?
|-
|-
|El9
|EL9
|?
|?
|?
|?
|?
|?
|380 <ref name="Hertel">[https://nbi.ku.dk/english/theses/phd-theses/hertel/dissertation_Hertel.pdf Hertel PhD thesis]</ref>
|200 <ref name="Drachmann" />
|?
|?
|-
|-
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|?
|?
|?
|?
|?
|335 <ref name="Ansaloni" />
|-
|-
|CSAR9
|CSAR9
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|?
|?
|?
|?
|?
|335 <ref name="Ansaloni" />
|-
|-
|CSAR13
|CSAR13

Revision as of 13:37, 2 February 2022

125 kV
Si InAsUC InPUC GaAsUC SiGe
A2 1000 700 ? ? ?
A4 1200-1300 [1] 700 900 [2] 630 ?
A6 1200 ? 900-920 [2] 760 ?
EL6 ? ? ? ? ?
EL9 450-500 [1] ? 280 [2] 420 ?
CSAR4 430 ? ? ? ?
CSAR9 500 [1] ? ? ? ?
CSAR13 430 [1] ? ? 350 ?
50k+A4 ? ? 500 [2] 745 ?
100 kV
Si InAsUC InPUC GaAsUC SiGe
A2 900 ? 620 [3] ? 1500-1600 [4]
A4 900 640-680 [5] 608-640 [3] 630 900 [4]
A6 1000 ? ? 670 ?
EL6 ? ? ? ? ?
EL9 ? ? 380 [2] 200 [3] ?
CSAR4 400 ? ? ? 335 [4]
CSAR9 ? ? ? ? 335 [4]
CSAR13 ? ? ? ? ?
50k+A4 ? ? ? 630 ?
  • GaAs: Uniform clearing
  • InP: Uniform clearing
  • InAs: Uniform clearing
  • Si: Optimal contrast

Note

Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.

Experimental

  • Dose density matrix for small and large spot size.
  • Measure CD as a function of dose and density for the two spot sizes.
  • Intersection of the two plots, for a given density gives isofocal dose.
  • Convert doses to dose factors, given that 0% iso-dose factor == PEC_df 0%
  • Base dose == isofocal dose 0% / PEC_df 0%
  • For density larger than 0%, predicted dose factor = (1+η)/(1+η*ρ*(1+φ/100))
    • 1+η = PEC_df 0%
    • Fit experimental isofocal dose factors and predicted dose factor by varying psi

100 kV:

Si: 897 uC/cm2 and phi = 75%

125 kV:

InP: 572 uC/cm2 and phi = 41%

InAs: 589 uC/cm2 and phi = 33%

Si: 906 uC/cm2 and phi = 45%

GaAs:752 uC/cm2 and phi = 39%

100 kV
Si (μC/cm2) / φ InAs (μC/cm2) / φ InP (μC/cm2) / φ GaAs (μC/cm2) / φ SiGe (μC/cm2) / φ
A2 ? ? ? ? ?
A4 897 / 75% ? ? ? ?
A6 ? ? ? ? ?
El6 ? ? ? ? ?
El9 ? ? ? ? ?
CSAR4 ? ? ? ? ?
CSAR9 ? ? ? ? ?
CSAR13 ? ? ? ? ?
50k+A4 ? ? ? ? ?


125 kV
Si (μC/cm2) / φ InAs (μC/cm2) / φ InP (μC/cm2) / φ GaAs (μC/cm2) / φ SiGe (μC/cm2) / φ
A2 ? ? ? ? ?
A4 906/ 45% 589/ 33% 572/ 41% 752/ 39% ?
A6 ? ? ? ? ?
El6 ? ? ? ? ?
El9 ? ? ? ? ?
CSAR4 ? ? ? ? ?
CSAR9 ? ? ? ? ?
CSAR13 ? ? ? ? ?
50k+A4 ? ? ? ? ?