Doses: Difference between revisions
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|900 | |900 | ||
|? | |? | ||
| | |300 | ||
|? | |? | ||
|? | |? | ||
Revision as of 16:18, 25 June 2018
| Si | InAsUC | InPUC | GaAsUC | SiGe | |
| A2 | 1000 | 700 | ? | ? | ? |
| A4 | 1000 | 700 | ? | 630 | ? |
| A6 | 1200 | ? | ? | 760 | ? |
| El6 | ? | ? | ? | ? | ? |
| El9 | ? | ? | ? | 420 | ? |
| CSAR4 | 430 | ? | ? | ? | ? |
| CSAR9 | ? | ? | ? | ? | ? |
| CSAR13 | 450 | ? | ? | 350 | ? |
| 50k+A4 | ? | ? | ? | 745 | ? |
| Si | InAsUC | InPUC | GaAsUC | SiGe | |
| A2 | 900 | ? | 300 | ? | ? |
| A4 | 900 | ? | 500 | 630 | ? |
| A6 | 1000 | ? | ? | 670 | ? |
| El6 | ? | ? | ? | ? | ? |
| El9 | ? | ? | ? | ? | ? |
| CSAR4 | 400 | ? | ? | ? | ? |
| CSAR9 | ? | ? | ? | ? | ? |
| CSAR13 | ? | ? | ? | ? | ? |
| 50k+A4 | ? | ? | ? | 630 | ? |
- GaAs: Uniform clearing
- InP: Uniform clearing
- InAs: Uniform clearing
- Si: Optimal contrast
Note
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.