Doses

125 kV

GaAs

A6: 742 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA

CSAR13: 420uC/cm2 base dose/24s o-xylene/5s conc. MIBK develop with IPA rinse

EL9: 420uC/cm2 base dose/45s MIBK:IPA develop with IPA rinse

InP

A4.5: 700 uC/cm2 Uniform clearing Beamer base dose/60s MIBK:IPA dev/10s IPA

Si

CSAR 9: 430 uC/cm2 optimal contrast

A4: 1000 uC/cm2

A6: 1200 uC/cm2 (or 1000 uC/cm2 with longer development? To be tested)

100 kV

GaAs

A6: --- uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK:IPA/10s IPA

CSAR 13: **480uC/cm2 base dose/ 24s O-Xylene/5s conc. MIBK develop/IPA rinse

• • - likely overdosed

EL9: 380 uC/cm2 base dose/ 45s MIBK:IPA/ 10s IPA rinse

InP

A4.5: 550 uC/cm2 Uniform clearing Beamer base dose/60s MIBK:IPA dev/10s IPA

Si

CSAR 9: 400 uC/cm2 optimal contrast/ 30s O-Xylene/5s conc. MIBK/IPA

A4: 800 uC/cm2/40s MIBK:IPA dev./10s IPA

A6: 1000 uC/cm2/60s MIBK:IPA dev./10s IPA