Etching: Difference between revisions
Jump to navigation
Jump to search
No edit summary |
|||
| (One intermediate revision by the same user not shown) | |||
| Line 31: | Line 31: | ||
=Dry etching= | =Dry etching= | ||
For dry etching, you can use [[AJA systems]] or [[Plassys Evaporator]]. AJA1 and Plassys have an Ion gun for DC Kaufman milling, and in AJA2 you can do RF milling. | For dry etching, you can use [[AJA systems]] or [[Plassys Evaporator]]. AJA1 and Plassys have an Ion gun for DC Kaufman milling, and in AJA2 you can do RF milling. | ||
==Erch rate with AJA1== | |||
* Argon flow: 15 sccm. | |||
* pressure: 1 mTorr. | |||
* Angle: 90 degree tilt , i.e. head on. | |||
* Milling duration: 2 minutes warm-up followed by 4 minutes milling. | |||
=== Kaufmann settings === | |||
* cathode Amps = 7.0 | |||
* Discharge Volts = 40.0 | |||
* Discharge Amps = 0.5 | |||
* Beam Volts = 300.0 | |||
* beam Amps = 23.0 | |||
* Accelerator Volts = 120.0 | |||
* Accelerator Amps = 10.0 | |||
* Emission mAmps = 46.0 | |||
* Neutralizer Amps = 11.0 | |||
=== Gold === | |||
{| class="wikitable" | |||
|- | |||
| Time [minutes] | |||
| 1 | |||
| 3 | |||
| 5 | |||
| 7 | |||
|- | |||
| Δh [nm] | |||
| 9.2 | |||
| 28.4 | |||
| 46.9 | |||
| 46.5 | |||
|} | |||
[[File:AJA1_Au.jpg|500px]] | |||
=== Aluminum === | |||
{| class="wikitable" | |||
|- | |||
| Time [minutes] | |||
| 1 | |||
| 3 | |||
| 5 | |||
| 7 | |||
|- | |||
| Δh [nm] | |||
| 2.5 | |||
| 7.7 | |||
| 13.4 | |||
| 21.3 | |||
|} | |||
[[File:AJA1_Al.jpg|500px]] | |||
==Erch rate with AJA2== | ==Erch rate with AJA2== | ||
===SiOx=== | |||
Milling of SiOx on Si for 5 minutes at different pressures | Milling of SiOx on Si for 5 minutes at different pressures | ||
Latest revision as of 12:20, 8 September 2025
Wet etching
https://transene.com/etch-compatibility/ Data comparing different bottles of transene type D: Etching on Si, InAs (001), and GaAs(001)
Etch rate with MIF321
The Al/SiO2 chips are developed in MIF321 for 50 sec, before etching.
| Time [seconds] | 0 | 3 | 6 | 9 | 12 | 15 |
| Δh [nm] | 10 | 25 | 35 | 40 | 50 | 60 |
Dry etching
For dry etching, you can use AJA systems or Plassys Evaporator. AJA1 and Plassys have an Ion gun for DC Kaufman milling, and in AJA2 you can do RF milling.
Erch rate with AJA1
- Argon flow: 15 sccm.
- pressure: 1 mTorr.
- Angle: 90 degree tilt , i.e. head on.
- Milling duration: 2 minutes warm-up followed by 4 minutes milling.
Kaufmann settings
- cathode Amps = 7.0
- Discharge Volts = 40.0
- Discharge Amps = 0.5
- Beam Volts = 300.0
- beam Amps = 23.0
- Accelerator Volts = 120.0
- Accelerator Amps = 10.0
- Emission mAmps = 46.0
- Neutralizer Amps = 11.0
Gold
| Time [minutes] | 1 | 3 | 5 | 7 |
| Δh [nm] | 9.2 | 28.4 | 46.9 | 46.5 |
Aluminum
| Time [minutes] | 1 | 3 | 5 | 7 |
| Δh [nm] | 2.5 | 7.7 | 13.4 | 21.3 |
Erch rate with AJA2
SiOx
Milling of SiOx on Si for 5 minutes at different pressures
| Power [W] | Δh [nm] | |||
|---|---|---|---|---|
| 6 mTorr | 12 mTorr | 18 mTorr | 24 mTorr | |
| 50 | 2.7 | 3.0 | 5.5 | 3.7 |
| 100 | 9.8 | 13.6 | 10.4 | 17.3 |
| 150 | 13.5 | 16.2 | 47.3 | 35.1 |
| 200 | 24.3 | 35.9 | 57.0 | 53.1 |
| 250 | 38.3 | 47.9 | 77.3 | 72.7 |
Data from Shiv, qdevwiki Aug 2016