Etching: Difference between revisions

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=Dry etching=
=Dry etching=
For dry etching, you can use [[AJA systems]] or [[Plassys Evaporator]]. AJA1 and Plassys have an Ion gun for DC milling, and in AJA2 you can do RF milling.  
For dry etching, you can use [[AJA systems]] or [[Plassys Evaporator]]. AJA1 and Plassys have an Ion gun for DC Kaufman milling, and in AJA2 you can do RF milling.  
==Erch rate with AJA2==
==Erch rate with AJA1==
Milling of SiOx on Si for 5 minutes at different pressures
* Argon flow: 15 sccm.
* pressure:  1 mTorr.
* Angle: 90 degree tilt , i.e. head on.
* Milling duration: 2 minutes warm-up followed by 4 minutes milling.


=== Kaufmann settings ===
* cathode Amps = 7.0
* Discharge Volts = 40.0
* Discharge Amps = 0.5
* Beam Volts = 300.0 
* beam Amps = 23.0
* Accelerator Volts = 120.0
* Accelerator Amps = 10.0
* Emission mAmps = 46.0
* Neutralizer Amps = 11.0


== 6 mTorr ==
=== Gold ===
{| class="wikitable"
|-
| Power [W]
| 50
| 100
| 150
| 200
| 250
|-
| Δh [nm]
| 2.7
| 9.8
| 13.5
| 24.3
| 38.3
|}
 
== 12 mTorr ==


{| class="wikitable"
{| class="wikitable"
|-
|-
| Power [W]
| Time [minutes]
| 50
| 1
| 100
| 3
| 150
| 5
| 200
| 7
| 250
|-
|-
| Δh [nm]
| Δh [nm]
| 3.0
| 9.2
| 13.6
| 28.4
| 16.2
| 46.9
| 35.9
| 46.5
| 47.9
|}
|}


== 18 mTorr ==
[[File:AJA1_Au.jpg|500px]]
 
{| class="wikitable"
|-
| Power [W]
| 50
| 100
| 150
| 200
| 250
|-
| Δh [nm]
| 5.5
| 10.4
| 47.3
| 57.0
| 77.3
|}


== 24 mTorr ==
=== Aluminum ===


{| class="wikitable"
{| class="wikitable"
|-
|-
| Power [W]
| Time [minutes]
| 50
| 1
| 100
| 3
| 150
| 5
| 200
| 7
| 250
|-
|-
| Δh [nm]
| Δh [nm]
| 3.7
| 2.5
| 17.3
| 7.7
| 35.1
| 13.4
| 53.1
| 21.3
| 72.7
|}
|}


== 6 mTorr ==
[[File:AJA1_Al.jpg|500px]]
{| class="wikitable"
|-
| Power [W]
| 50
| 100
| 150
| 200
| 250
|-
| Δh [nm]
| 2.7
| 9.8
| 13.5
| 24.3
| 38.3
|}


== 12 mTorr ==


{| class="wikitable"
==Erch rate with AJA2==
|-
| Power [W]
| 50
| 100
| 150
| 200
| 250
|-
| Δh [nm]
| 3.0
| 13.6
| 16.2
| 35.9
| 47.9
|}


== 18 mTorr ==
===SiOx===
 
Milling of SiOx on Si for 5 minutes at different pressures
{| class="wikitable"
|-
| Power [W]
| 50
| 100
| 150
| 200
| 250
|-
| Δh [nm]
| 5.5
| 10.4
| 47.3
| 57.0
| 77.3
|}
 
== 24 mTorr ==


{| class="wikitable"
{| class="wikitable"
Line 184: Line 108:
| 250||38.3||47.9||77.3||72.7
| 250||38.3||47.9||77.3||72.7
|}
|}
[[File:Milling.jpg|500px]]
''Data from Shiv, qdevwiki Aug 2016''

Latest revision as of 12:20, 8 September 2025

Wet etching

https://transene.com/etch-compatibility/ Data comparing different bottles of transene type D: Etching on Si, InAs (001), and GaAs(001)


Etch rate with MIF321

The Al/SiO2 chips are developed in MIF321 for 50 sec, before etching.

Time [seconds] 0 3 6 9 12 15
Δh [nm] 10 25 35 40 50 60

Dry etching

For dry etching, you can use AJA systems or Plassys Evaporator. AJA1 and Plassys have an Ion gun for DC Kaufman milling, and in AJA2 you can do RF milling.

Erch rate with AJA1

  • Argon flow: 15 sccm.
  • pressure: 1 mTorr.
  • Angle: 90 degree tilt , i.e. head on.
  • Milling duration: 2 minutes warm-up followed by 4 minutes milling.

Kaufmann settings

  • cathode Amps = 7.0
  • Discharge Volts = 40.0
  • Discharge Amps = 0.5
  • Beam Volts = 300.0
  • beam Amps = 23.0
  • Accelerator Volts = 120.0
  • Accelerator Amps = 10.0
  • Emission mAmps = 46.0
  • Neutralizer Amps = 11.0

Gold

Time [minutes] 1 3 5 7
Δh [nm] 9.2 28.4 46.9 46.5

Aluminum

Time [minutes] 1 3 5 7
Δh [nm] 2.5 7.7 13.4 21.3


Erch rate with AJA2

SiOx

Milling of SiOx on Si for 5 minutes at different pressures

Power [W] Δh [nm]
6 mTorr 12 mTorr 18 mTorr 24 mTorr
50 2.7 3.0 5.5 3.7
100 9.8 13.6 10.4 17.3
150 13.5 16.2 47.3 35.1
200 24.3 35.9 57.0 53.1
250 38.3 47.9 77.3 72.7

Data from Shiv, qdevwiki Aug 2016

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