AR-P 6200 (CSAR)
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Some users are experimenting with AR-P 6200 (CSAR 62) from ALLRESIST GmbH as an alternative to ZEP resists. This page contains information on the resist and the process recommended by Shiv.
Documents from the supplier:
We have the following resist solution stocked in the cleanroom:
| CSAR dilutions | Thickness at 4000 rpm (nm) | Suitable for |
| CSAR4 (AR-P 6200-04) | 80 | fine feature exposures such as sub 50 nm gates, etc. |
| CSAR9 (AR-P 6200-09) | 200 | processes involving 1-3 mins of Ar ion milling. |
| CSAR13 (AR-P 6200-13) | 400 | processes involving hardcore 10-20 mins of milling. Thicker resists are easier to strip after. |
Process parameters
The following doses are recommended starting points at 100 kV.
- Minimal dose: 270 µC/cm².
- Typical dose for 5 by 5 µm: 350 µC/cm².
- For 20 nm wide lines: 600 to 800 µC/cm².
A typical development process
- O-xylene 60 s.
- (MIBK:IPA 1:3) 30 s.
- IPA 30 s.
Lift off in 1,3-dioxolane at RT is recommended.
The ashing rate for AR-P 6200 is 4 nm/min. The milling rate is 5 to 6 nm/min at 300V.
Bilayer resist
If you deposit AR-P 6200 resist on top of EL6 or EL9, Shiv recommends about 60 s in MIBK:IPA (1:3) during development as is usual with PMMA as the top layer.