Atomic layer deposition

An Atomic Layer Deposition (ALD) process is a vapor-phase, thin-film deposition method driven by the chemical saturation of surfaces, allowing for conformal coatings of surfaces with very high aspect ratios. The reason for this uniform coating lies in the saturative chemisorption of sequential cycles of precursor vapors.

Principles

A repetitive sequence of four steps, so called cycle, achieves the coating of the surface.

Cycle sequence

1. The surface of the material is terminated with hydroxyl groups (formed during contact with air).
2. The first precursor is introduced: The precursor molecules react with the surface hydroxyles forming a single saturated monolayer.
3. Evacuation: The byproducts of the reaction (methane - CH₃) and the unreacted precursor molecules are pumped out of the chamber
4. Water (H₂0) is introduced: Water (H₂0) is pulsed into the reactor. This will remove the CH₃ groups and create oxide bridges, and passivate the surface with hydroxyles.
5. Evacuation: The byproducts of the reaction (methane - CH₃) and the unreacted precursor molecules are pumped out of the chamber.

As a result, a single oxide layer has been formed and surface hydroxyl groups are used again to perform another cycle.

Notes

• During the coating procedure, N₂ is used as a carrier gas in a user-determined flow, and a scroll pump attached to the exhaust continuously pumps the byproducts from the reactor.
• The ratio of the oxide thickness over the growth cycles gives the growth per cycle (GPC)