Adhesion promoter AR 300-80 NEW

From cleanroom
Revision as of 13:53, 8 September 2025 by Harry (talk | contribs) (Created page with "We stock AR 300-80 adhesion promoter in the cleanroom, which is recommended if you have delamination issues. The promoter works with Si (SiO2) and other III-V semiconductors. We've tested it on GaSb with very nice results. * AR 300-80 info sheet. * Material safety data sheet. Recommended processing instructions: * Spin coat a clean chip with the adhesion promoter at 4000 rpm for 45-60 s. The manufacturer states...")
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search

We stock AR 300-80 adhesion promoter in the cleanroom, which is recommended if you have delamination issues. The promoter works with Si (SiO2) and other III-V semiconductors. We've tested it on GaSb with very nice results.

Recommended processing instructions:

  • Spin coat a clean chip with the adhesion promoter at 4000 rpm for 45-60 s. The manufacturer states that you should get a 15 nm thin layer for this rpm.
  • Bake at 185 for 1 min
  • You can now do one of the following steps:
    • Strip the excess adh. promoter by dipping in Dioxolane/NMP/Acetone. Rinse with IPA and dry. The surface retains a monolayer of the promoter confirmed by contact angle measurements by the manufacturer
    • OR spin on your next resist layers and the excess promoter dissolves in the resist.
  • The dose, development time or etching recipes will not change with the inclusion of the adh. promoter in your fab steps. Compatibility with Si and GaSb has been tested to work nicely in this lab. [7th Jan, 2015]
Retrieved from "https://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Adhesion_promoter_AR_300-80_NEW&oldid=2575"