Atomic layer deposition: Difference between revisions
Jump to navigation
Jump to search
Created page with "An Atomic Layer Deposition (ALD) process is a vapor-phase, thin-film deposition method driven by the chemical saturation of surfaces, allowing for conformal coatings of surfaces with very high aspect ratios. The reason for this uniform coating lies in the '''saturative chemisorption''' of sequential cycles of precursor vapors. =Principles= A repetitive sequence of four steps, so called '''cycle''', achieves the coating of the surface. ==Cycle sequence== # The surface of..." |
|||
| Line 4: | Line 4: | ||
A repetitive sequence of four steps, so called '''cycle''', achieves the coating of the surface. | A repetitive sequence of four steps, so called '''cycle''', achieves the coating of the surface. | ||
==Cycle sequence== | ==Cycle sequence== | ||
'''Initial state:''' The surface of the material is terminated with hydroxyl groups (formed during contact with air). | |||
# '''The first precursor is introduced:''' The precursor molecules react with the surface hydroxyles forming a single saturated monolayer. | # '''The first precursor is introduced:''' The precursor molecules react with the surface hydroxyles forming a single saturated monolayer. | ||
# '''Evacuation:''' The byproducts of the reaction (methane - CH<sub>3</sub>) and the unreacted precursor molecules are pumped out of the chamber | # '''Evacuation:''' The byproducts of the reaction (methane - CH<sub>3</sub>) and the unreacted precursor molecules are pumped out of the chamber | ||
| Line 10: | Line 10: | ||
# '''Evacuation:''' The byproducts of the reaction (methane - CH<sub>3</sub>) and the unreacted precursor molecules are pumped out of the chamber. | # '''Evacuation:''' The byproducts of the reaction (methane - CH<sub>3</sub>) and the unreacted precursor molecules are pumped out of the chamber. | ||
'''Final state:''' A single oxide layer has been formed and surface hydroxyl groups are used again to perform another cycle. | |||
A simplistic visualisation of a binary reaction sequence is illustrated below. | |||
==Notes== | ==Notes== | ||
* During the coating procedure, N<sub>2</sub> is used as a carrier gas in a user-determined flow, and a scroll pump attached to the exhaust continuously pumps the byproducts from the reactor. | * During the coating procedure, N<sub>2</sub> is used as a carrier gas in a user-determined flow, and a scroll pump attached to the exhaust continuously pumps the byproducts from the reactor. | ||
* The ratio of the ''oxide thickness'' over the ''growth cycles'' gives the '''growth per cycle (GPC)''' | * The ratio of the ''oxide thickness'' over the ''growth cycles'' gives the '''growth per cycle (GPC)''' | ||
==An ALD cycle in Savannah== | |||
The following image is a part of the "playlist" in the ALD2 system corresponding to the deposition sequence. | |||
# '''pulse''': An electrical signal turns on the precursor valve, introducing precursor A | |||
# '''wait''': The reaction products and the non-reacted molecules of precursor A are pumped out of the system for a set time | |||
# '''pulse''': An electrical signal turns on the precursor valve, introducing precursor B (water) | |||
# '''wait''': The reaction products and the non-reacted molecules of precursor B (water) are pumped out of the system for a set time | |||
# '''goto''': The loop command. It defines the line that the cycle will restart as well as the amount of cycles that you desire. | |||
Revision as of 12:29, 15 June 2026
An Atomic Layer Deposition (ALD) process is a vapor-phase, thin-film deposition method driven by the chemical saturation of surfaces, allowing for conformal coatings of surfaces with very high aspect ratios. The reason for this uniform coating lies in the saturative chemisorption of sequential cycles of precursor vapors.
Principles
A repetitive sequence of four steps, so called cycle, achieves the coating of the surface.
Cycle sequence
Initial state: The surface of the material is terminated with hydroxyl groups (formed during contact with air).
- The first precursor is introduced: The precursor molecules react with the surface hydroxyles forming a single saturated monolayer.
- Evacuation: The byproducts of the reaction (methane - CH3) and the unreacted precursor molecules are pumped out of the chamber
- Water (H20) is introduced: Water (H20) is pulsed into the reactor. This will remove the CH3 groups and create oxide bridges, and passivate the surface with hydroxyles.
- Evacuation: The byproducts of the reaction (methane - CH3) and the unreacted precursor molecules are pumped out of the chamber.
Final state: A single oxide layer has been formed and surface hydroxyl groups are used again to perform another cycle.
A simplistic visualisation of a binary reaction sequence is illustrated below.
Notes
- During the coating procedure, N2 is used as a carrier gas in a user-determined flow, and a scroll pump attached to the exhaust continuously pumps the byproducts from the reactor.
- The ratio of the oxide thickness over the growth cycles gives the growth per cycle (GPC)
An ALD cycle in Savannah
The following image is a part of the "playlist" in the ALD2 system corresponding to the deposition sequence.
- pulse: An electrical signal turns on the precursor valve, introducing precursor A
- wait: The reaction products and the non-reacted molecules of precursor A are pumped out of the system for a set time
- pulse: An electrical signal turns on the precursor valve, introducing precursor B (water)
- wait: The reaction products and the non-reacted molecules of precursor B (water) are pumped out of the system for a set time
- goto: The loop command. It defines the line that the cycle will restart as well as the amount of cycles that you desire.