Etching: Difference between revisions
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Created page with "https://transene.com/etch-compatibility/ Data comparing different bottles of transene type D: Etching on Si, InAs (001), and GaAs(001)" |
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https://transene.com/etch-compatibility/ | https://transene.com/etch-compatibility/ | ||
Data comparing different bottles of transene type D: Etching on Si, InAs (001), and GaAs(001) | Data comparing different bottles of transene type D: Etching on Si, InAs (001), and GaAs(001) | ||
= Etch rate with MIF321 = | |||
The Al/SiO2 chips are developed in MIF321 for 50 sec, before etching. | |||
{| class="wikitable" | |||
|- | |||
| Time [seconds] | |||
| 0 | |||
| 3 | |||
| 6 | |||
| 9 | |||
| 12 | |||
| 15 | |||
|- | |||
| Δh [nm] | |||
| 10 | |||
| 25 | |||
| 35 | |||
| 40 | |||
| 50 | |||
| 60 | |||
|} | |||
[[File:MIF_etch.jpg|750px]] | |||
Revision as of 09:54, 8 September 2025
https://transene.com/etch-compatibility/ Data comparing different bottles of transene type D: Etching on Si, InAs (001), and GaAs(001)
Etch rate with MIF321
The Al/SiO2 chips are developed in MIF321 for 50 sec, before etching.
| Time [seconds] | 0 | 3 | 6 | 9 | 12 | 15 |
| Δh [nm] | 10 | 25 | 35 | 40 | 50 | 60 |
