Etching - Revision history

Harry: /* etching ALD HfOx */

2026-03-24T09:48:57Z

etching ALD HfOx

← Older revision		Revision as of 09:48, 24 March 2026
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	===etching ALD HfOx===		===etching ALD HfOx===
	Blank Si samples with HfOx grown locally by ALD.		Blank Si samples with HfOx grown locally by ALD.
			The sample was etched for 2 mins and the film was measured by ellipsometry. Then, repeated the etch 3 times.

	{\| class="wikitable"		{\| class="wikitable"
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	\| 6		\| 6
	\|-		\|-
	\| ~~Δ~~h [nm]		\| h [nm]
	\| 21.53		\| 21.53
	\| 17.18		\| 17.18

2026-03-24T09:47:15Z

Wet etching

← Older revision		Revision as of 09:47, 24 March 2026
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	[[File:MIF_etch.jpg\|750px]]		[[File:MIF_etch.jpg\|750px]]

			== Etch rate with BHF ==
			===etching ALD HfOx===
			Blank Si samples with HfOx grown locally by ALD.

			{\| class="wikitable"
			\|-
			\| Time [minutes]
			\| 0
			\| 2
			\| 4
			\| 6
			\|-
			\| Δh [nm]
			\| 21.53
			\| 17.18
			\| 12.18
			\| 7.55
			\|}

	=Dry etching=		=Dry etching=

2025-09-08T12:20:21Z

← Older revision		Revision as of 12:20, 8 September 2025
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	[[File:AJA1_Al.jpg\|500px]]		[[File:AJA1_Al.jpg\|500px]]
	~~[[Category:MigrateToOpenWiki]]~~

2025-09-08T12:18:43Z

Dry etching

@@ Line 31: / Line 31: @@
 =Dry etching=
 For dry etching, you can use [[AJA systems]] or [[Plassys Evaporator]]. AJA1 and Plassys have an Ion gun for DC Kaufman milling, and in AJA2 you can do RF milling.
 ==Erch rate with AJA2==
 Milling of SiOx on Si for 5 minutes at different pressures

2025-09-08T12:15:39Z

Erch rate with AJA2

2025-09-08T12:11:21Z

Dry etching

← Older revision		Revision as of 12:11, 8 September 2025
Line 30:		Line 30:

	=Dry etching=		=Dry etching=
	For dry etching, you can use [[AJA systems]] or [[Plassys Evaporator]]. AJA1 and Plassys have an Ion gun for DC milling, and in AJA2 you can do RF milling.		For dry etching, you can use [[AJA systems]] or [[Plassys Evaporator]]. AJA1 and Plassys have an Ion gun for DC Kaufman milling, and in AJA2 you can do RF milling.
	==Erch rate with AJA2==		==Erch rate with AJA2==
	Milling of SiOx on Si for 5 minutes at different pressures		Milling of SiOx on Si for 5 minutes at different pressures

2025-09-08T12:10:17Z

Dry etching

@@ Line 33: / Line 33: @@
 ==Erch rate with AJA2==
 Milling of SiOx on Si for 5 minutes at different pressures
 {| class="wikitable"
@@ Line 184: / Line 50: @@
 | 250||38.3||47.9||77.3||72.7
 |}

2025-09-08T12:08:55Z

24 mTorr

2025-09-08T12:05:23Z

2025-09-08T09:54:28Z

← Older revision		Revision as of 09:54, 8 September 2025
Line 1:		Line 1:
	https://transene.com/etch-compatibility/		https://transene.com/etch-compatibility/
	Data comparing different bottles of transene type D: Etching on Si, InAs (001), and GaAs(001)		Data comparing different bottles of transene type D: Etching on Si, InAs (001), and GaAs(001)


			= Etch rate with MIF321 =
			The Al/SiO2 chips are developed in MIF321 for 50 sec, before etching.

			{\| class="wikitable"
			\|-
			\| Time [seconds]
			\| 0
			\| 3
			\| 6
			\| 9
			\| 12
			\| 15
			\|-
			\| Δh [nm]
			\| 10
			\| 25
			\| 35
			\| 40
			\| 50
			\| 60
			\|}

			[[File:MIF_etch.jpg\|750px]]