AZ 1505 - Revision history

Karolis: /* Dose Test */ changed to direct link

2022-04-10T19:31:08Z

Dose Test: changed to direct link

← Older revision		Revision as of 19:31, 10 April 2022
Line 27:		Line 27:
	The figure shows the height of the squares measured by SEM after the lift-off process as a function of dose and defocus. The aimed height was of 5 µm.		The figure shows the height of the squares measured by SEM after the lift-off process as a function of dose and defocus. The aimed height was of 5 µm.

	[[~~File~~:Height_AZ.pdf]]		[[Media:Height_AZ.pdf]]

	[[Category:Fabrication]]		[[Category:Fabrication]]

Karolis: /* Processing guidelines */ added some links

2022-04-10T19:29:55Z

Processing guidelines: added some links

← Older revision		Revision as of 19:29, 10 April 2022
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	# Spin at 4000 RPM for 45 s. This yields a film thickness of 0.5 µm.		# Spin at 4000 RPM for 45 s. This yields a film thickness of 0.5 µm.
	# Softbake at 100°C on a hotplate for 1 minute. Note: The longer the baking time, the lower the solvent concentration. Softbaking for too short or too cool may cause bubbling and foaming of the resist due to the generation of nitrogen during UV exposure. Softbaking for too long or too hot will decompose a fraction of the DNQ, and decrease the development rate.		# Softbake at 100°C on a [[Präzitherm hotplates\|hotplate]] for 1 minute. Note: The longer the baking time, the lower the solvent concentration. Softbaking for too short or too cool may cause bubbling and foaming of the resist due to the generation of nitrogen during UV exposure. Softbaking for too long or too hot will decompose a fraction of the DNQ, and decrease the development rate.
	# Expose your pattern		# Expose your pattern
	# An optional post-exposure bake may be performed to reduce standing wave patterns that may occur.		# An optional post-exposure bake may be performed to reduce standing wave patterns that may occur.
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	## Other metal ion free ([[Lithography glossary\|MIF]]) developers may be used if Na og K ions are detrimental to your device.		## Other metal ion free ([[Lithography glossary\|MIF]]) developers may be used if Na og K ions are detrimental to your device.
	# Rinse immediately with [[Chemical glossary\|MQ]] water.		# Rinse immediately with [[Chemical glossary\|MQ]] water.
	# A hardbake may be performed to enhance the etch resistance of the resist, but is otherwise not recommended, especially if a subsequent metal lift-off process is planned due as this causes the resist to reflow and ruins the undercut.		# A hardbake may be performed to enhance the etch resistance of the resist, but is otherwise not recommended, especially if a subsequent [[Fundamentals of lithography\|metal lift-off]] process is planned due as this causes the resist to reflow and ruins the undercut.

	== Dose Test ==		== Dose Test ==

Karolis at 22:38, 7 April 2022

2022-04-07T22:38:00Z

← Older revision		Revision as of 22:38, 7 April 2022
Line 28:		Line 28:

	[[File:Height_AZ.pdf]]		[[File:Height_AZ.pdf]]

			[[Category:Fabrication]]

Shiv at 17:07, 30 January 2018

2018-01-30T17:07:45Z

← Older revision		Revision as of 17:07, 30 January 2018
Line 22:		Line 22:
	# Rinse immediately with [[Chemical glossary\|MQ]] water.		# Rinse immediately with [[Chemical glossary\|MQ]] water.
	# A hardbake may be performed to enhance the etch resistance of the resist, but is otherwise not recommended, especially if a subsequent metal lift-off process is planned due as this causes the resist to reflow and ruins the undercut.		# A hardbake may be performed to enhance the etch resistance of the resist, but is otherwise not recommended, especially if a subsequent metal lift-off process is planned due as this causes the resist to reflow and ruins the undercut.

			== Dose Test ==

			The figure shows the height of the squares measured by SEM after the lift-off process as a function of dose and defocus. The aimed height was of 5 µm.

			[[File:Height_AZ.pdf]]

Petur at 16:37, 23 August 2016

2016-08-23T16:37:47Z

Petur at 12:40, 22 August 2016

2016-08-22T12:40:12Z

← Older revision		Revision as of 12:40, 22 August 2016
Line 18:		Line 18:
	## AZ 351B is based on buffered NaOH, and thus attacks aluminium. For high contrast, develop for 60 s with mild agitation in a dilution of 1:5 with water.		## AZ 351B is based on buffered NaOH, and thus attacks aluminium. For high contrast, develop for 60 s with mild agitation in a dilution of 1:5 with water.
	## AZ 400K is based on buffered KOH, and thus attacks aluminium. For high contrast, develop for 1-3 min with mild agitation in a dilution of 1:4 with water. This developer seems primarily geared for thicker photoresist (e.g. AZ 4500 series).		## AZ 400K is based on buffered KOH, and thus attacks aluminium. For high contrast, develop for 1-3 min with mild agitation in a dilution of 1:4 with water. This developer seems primarily geared for thicker photoresist (e.g. AZ 4500 series).
	## AZ developer: For highest contrast, use a dilution of 1:1 with water and develop for 60 s with mild agitation. This developer contains sodium metasilicate, and sodium phosphate, and is tuned for the lowest attack of aluminium. The [[dark erosion]] is slightly than for the other developers.		## AZ developer: For highest contrast, use a dilution of 1:1 with water and develop for 60 s with mild agitation. This developer contains sodium metasilicate, and sodium phosphate, and is tuned for the lowest attack of aluminium. The [[Lithography glossary\|dark erosion]] is slightly than for the other developers.
	## Other metal ion free ([[MIF]]) developers may be used if Na og K ions may be disruptive to your device.		## Other metal ion free ([[Lithography glossary\|MIF]]) developers may be used if Na og K ions may be disruptive to your device.
	# Rinse immediately with [[MQ]] water.		# Rinse immediately with [[Chemical glossary\|MQ]] water.
	# A hardbake may be performed to enhance the etch resistance of the resist, but is otherwise not recommended, especially if a subsequent metal lift-off process is planned due as this causes the resist to reflow and ruins the undercut.		# A hardbake may be performed to enhance the etch resistance of the resist, but is otherwise not recommended, especially if a subsequent metal lift-off process is planned due as this causes the resist to reflow and ruins the undercut.

Petur at 12:25, 22 August 2016

2016-08-22T12:25:31Z

← Older revision		Revision as of 12:25, 22 August 2016
Line 6:		Line 6:
	* Solvent: methoxy-propyl acetate ([https://en.wikipedia.org/wiki/Propylene_glycol_methyl_ether_acetate PGMEA])		* Solvent: methoxy-propyl acetate ([https://en.wikipedia.org/wiki/Propylene_glycol_methyl_ether_acetate PGMEA])
	* The photoactive compound: [https://en.wikipedia.org/wiki/Diazonaphthoquinone diazonaphtoquinone-(DNQ-)sulfonate]		* The photoactive compound: [https://en.wikipedia.org/wiki/Diazonaphthoquinone diazonaphtoquinone-(DNQ-)sulfonate]
	* Responds to the [[Mercury I, H, and G lines]]		* Responds to the [[Lithography glossary\|Mercury I, H, and G lines]]
	* May be used for both wet or dry etching		* May be used for both wet or dry etching

Petur: Created page with "AZ 1505 is a positive tone photoresist, sensitive to UV light in the range 310 - 410 nm. It draws its name from the company that initially developed it (AZ), the photoresist p..."

2016-08-22T12:15:56Z

Created page with "AZ 1505 is a positive tone photoresist, sensitive to UV light in the range 310 - 410 nm. It draws its name from the company that initially developed it (AZ), the photoresist p..."

New page

AZ 1505 is a positive tone photoresist, sensitive to UV light in the range 310 - 410 nm. It draws its name from the company that initially developed it (AZ), the photoresist product series (1500), and the thickness that it spins to at 4000 RPM (0.5 µm).

== Quick facts ==

* Solid contents: 17.7%
* Solvent: methoxy-propyl acetate ([https://en.wikipedia.org/wiki/Propylene_glycol_methyl_ether_acetate PGMEA])
* The photoactive compound: [https://en.wikipedia.org/wiki/Diazonaphthoquinone diazonaphtoquinone-(DNQ-)sulfonate]
* Responds to the [[Mercury I, H, and G lines]]
* May be used for both wet or dry etching

== Processing guidelines ==

# Spin at 4000 RPM for 45 s. This yields a film thickness of 0.5 µm.
# Softbake at 115°C on a hotplate for 2 minutes. Note: The longer the baking time, the lower the solvent concentration. Softbaking for too short or too cool may cause bubbling and foaming of the resist due to the generation of nitrogen during UV exposure. Softbaking for too long or too hot will decompose a fraction of the DNQ, and decrease the development rate.
# Expose your pattern
# An optional post-exposure bake may be performed to reduce standing wave patterns that may occur.
# Develop in your developer of choice:
## AZ 351B is based on buffered NaOH, and thus attacks aluminium. For high contrast, develop for 60 s with mild agitation in a dilution of 1:5 with water.
## AZ 400K is based on buffered KOH, and thus attacks aluminium. For high contrast, develop for 1-3 min with mild agitation in a dilution of 1:4 with water. This developer seems primarily geared for thicker photoresist (e.g. AZ 4500 series).
## AZ developer: For highest contrast, use a dilution of 1:1 with water and develop for 60 s with mild agitation. This developer contains sodium metasilicate, and sodium phosphate, and is tuned for the lowest attack of aluminium. The [[dark erosion]] is slightly than for the other developers.
## Other metal ion free ([[MIF]]) developers may be used if Na og K ions may be disruptive to your device.
# Rinse immediately with [[MQ]] water.
# A hardbake may be performed to enhance the etch resistance of the resist, but is otherwise not recommended, especially if a subsequent metal lift-off process is planned due as this causes the resist to reflow and ruins the undercut.

← Older revision		Revision as of 16:37, 23 August 2016
Line 1:		Line 1:
	AZ 1505 is a positive tone photoresist, sensitive to UV light in the range 310 - 410 nm. It draws its name from the company that initially developed it (AZ), the photoresist product series (1500), and the thickness that it spins to at 4000 RPM (0.5 µm).		AZ 1505 is a positive tone photoresist which is sensitive to UV light in the range 310 - 410 nm. It draws its name from the company that initially developed it (AZ), the photoresist product series (1500), and the thickness that it spins to at 4000 RPM (0.5 µm).

	== Quick facts ==		== Quick facts ==
Line 5:		Line 5:
	* Solid contents: 17.7%		* Solid contents: 17.7%
	* Solvent: methoxy-propyl acetate ([https://en.wikipedia.org/wiki/Propylene_glycol_methyl_ether_acetate PGMEA])		* Solvent: methoxy-propyl acetate ([https://en.wikipedia.org/wiki/Propylene_glycol_methyl_ether_acetate PGMEA])
	* ~~The photoactive~~ compound: [https://en.wikipedia.org/wiki/Diazonaphthoquinone diazonaphtoquinone-(DNQ-)sulfonate]		* Photoactive compound: [https://en.wikipedia.org/wiki/Diazonaphthoquinone diazonaphtoquinone-(DNQ-)sulfonate]
	* Responds to the [[Lithography glossary\|Mercury I, H, and G lines]]		* Responds to the [[Lithography glossary\|Mercury I, H, and G lines]]
	* ~~May be used~~ for both wet or dry etching		* Suitable for both wet or dry etching

	== Processing guidelines ==		== Processing guidelines ==

	# Spin at 4000 RPM for 45 s. This yields a film thickness of 0.5 µm.		# Spin at 4000 RPM for 45 s. This yields a film thickness of 0.5 µm.
	# Softbake at ~~115°C~~ on a hotplate for ~~2 minutes~~. Note: The longer the baking time, the lower the solvent concentration. Softbaking for too short or too cool may cause bubbling and foaming of the resist due to the generation of nitrogen during UV exposure. Softbaking for too long or too hot will decompose a fraction of the DNQ, and decrease the development rate.		# Softbake at 100°C on a hotplate for 1 minute. Note: The longer the baking time, the lower the solvent concentration. Softbaking for too short or too cool may cause bubbling and foaming of the resist due to the generation of nitrogen during UV exposure. Softbaking for too long or too hot will decompose a fraction of the DNQ, and decrease the development rate.
	# Expose your pattern		# Expose your pattern
	# An optional post-exposure bake may be performed to reduce standing wave patterns that may occur.		# An optional post-exposure bake may be performed to reduce standing wave patterns that may occur.
	# Develop in your developer of choice:		# Develop in your developer of choice:
	## AZ 351B ~~is based on buffered NaOH, and thus attacks aluminium~~. For high contrast, develop for 60 s with mild agitation in a dilution of 1:5 with water.		## '''AZ 351B''': The standard developer for this resist. For high contrast, develop for 60 s with mild agitation in a dilution of 1:5 with water. This developer is based on buffered NaOH, and thus attacks aluminium.
	~~## AZ 400K~~ is based on buffered ~~KOH~~, and thus attacks aluminium. For high contrast, develop for 1-3 min with mild agitation in a dilution of 1:4 with water. This developer seems primarily geared for thicker photoresist (e.g. AZ 4500 series).		## '''AZ 400K''': For high contrast, develop for 1-3 min with mild agitation in a dilution of 1:4 with water. This developer seems primarily geared for thicker photoresist (e.g. AZ 4500 series). It is based on buffered KOH, and thus attacks aluminium.
	## AZ developer: For highest contrast, use a dilution of 1:1 with water and develop for 60 s with mild agitation. This developer contains sodium metasilicate, and sodium phosphate, and is tuned for the lowest attack of aluminium. The [[Lithography glossary\|dark erosion]] is slightly than for the other developers.		## '''AZ developer''': For highest contrast, use a dilution of 1:1 with water and develop for 60 s with mild agitation. This developer contains sodium metasilicate, and sodium phosphate, and is tuned for the lowest attack of aluminium. The [[Lithography glossary\|dark erosion]] is slightly than for the other developers.
	## Other metal ion free ([[Lithography glossary\|MIF]]) developers may be used if Na og K ions ~~may be disruptive~~ to your device.		## Other metal ion free ([[Lithography glossary\|MIF]]) developers may be used if Na og K ions are detrimental to your device.
	# Rinse immediately with [[Chemical glossary\|MQ]] water.		# Rinse immediately with [[Chemical glossary\|MQ]] water.
	# A hardbake may be performed to enhance the etch resistance of the resist, but is otherwise not recommended, especially if a subsequent metal lift-off process is planned due as this causes the resist to reflow and ruins the undercut.		# A hardbake may be performed to enhance the etch resistance of the resist, but is otherwise not recommended, especially if a subsequent metal lift-off process is planned due as this causes the resist to reflow and ruins the undercut.