Harry at 10:01, 8 September 2025

2025-09-08T10:01:49Z

← Older revision		Revision as of 10:01, 8 September 2025
Line 11:		Line 11:
	\|-		\|-
	\|'''CSAR dilutions'''		\|'''CSAR dilutions'''
	\|'''~~Expected thickness~~ at 4000 rpm (nm)'''		\|'''Thickness at 4000 rpm (nm)'''
	\|'''Suitable for'''		\|'''Suitable for'''
	\|-		\|-

Harry at 10:01, 8 September 2025

2025-09-08T10:01:05Z

← Older revision		Revision as of 10:01, 8 September 2025
Line 14:		Line 14:
	\|'''Suitable for'''		\|'''Suitable for'''
	\|-		\|-
	\|~~CSAR 4%~~ (AR-P 6200-04)		\|CSAR4 (AR-P 6200-04)
	\|80		\|80
	\|fine feature exposures such as sub 50 nm gates, etc.		\|fine feature exposures such as sub 50 nm gates, etc.
	\|-		\|-
	\|~~CSAR 9%~~ (AR-P 6200-09)		\|CSAR9 (AR-P 6200-09)
	\|200		\|200
	\|processes involving 1-3 mins of Ar ion milling.		\|processes involving 1-3 mins of Ar ion milling.
	\|-		\|-
	\|~~CSAR 13%~~ (AR-P 6200-13)		\|CSAR13 (AR-P 6200-13)
	\|400		\|400
	\|processes involving ~~hard core~~ 10-20 mins of milling. Thicker resists are easier to strip after.		\|processes involving hardcore 10-20 mins of milling. Thicker resists are easier to strip after.
	\|}		\|}

Harry: Created page with "Some users are experimenting with AR-P 6200 (CSAR 62) from ALLRESIST GmbH as an alternative to ZEP resists. This page contains information on the resist and the process recommended by Shiv. Documents from the supplier: * AR-P 6200 (CSAR 62) info sheet. * Material safety data sheet. We have the following resist solution stocked in the cleanroom: {| class="wikitable" |+CSAR attributes |- |'''CSAR dilutions''' |''..."

2025-09-08T10:00:17Z

Created page with "Some users are experimenting with AR-P 6200 (CSAR 62) from ALLRESIST GmbH as an alternative to ZEP resists. This page contains information on the resist and the process recommended by Shiv. Documents from the supplier: * AR-P 6200 (CSAR 62) info sheet. * Material safety data sheet. We have the following resist solution stocked in the cleanroom: {| class="wikitable" |+CSAR attributes |- |'''CSAR dilutions''' |''..."

New page

Some users are experimenting with AR-P 6200 (CSAR 62) from ALLRESIST GmbH as an alternative to ZEP resists. This page contains information on the resist and the process recommended by Shiv.

Documents from the supplier:

* [[media:AR-P_6200_info.pdf|AR-P 6200 (CSAR 62) info sheet]].
* [[media:AR-P_6200_MSDS.pdf|Material safety data sheet]].

We have the following resist solution stocked in the cleanroom:
{| class="wikitable"
|+CSAR attributes
|-
|'''CSAR dilutions'''
|'''Expected thickness at 4000 rpm (nm)'''
|'''Suitable for'''
|-
|CSAR 4% (AR-P 6200-04)
|80
|fine feature exposures such as sub 50 nm gates, etc.
|-
|CSAR 9% (AR-P 6200-09)
|200
|processes involving 1-3 mins of Ar ion milling.
|-
|CSAR 13% (AR-P 6200-13)
|400
|processes involving hard core 10-20 mins of milling. Thicker resists are easier to strip after.
|}

==Process parameters==

The following doses are recommended starting points at 100 kV.

* Minimal dose: 270 µC/cm².
* Typical dose for 5 by 5 µm: 350 µC/cm².
* For 20 nm wide lines: 600 to 800 µC/cm².

A typical development process

# O-xylene 60 s.
# (MIBK:IPA 1:3) 30 s.
# IPA 30 s.

Lift off in 1,3-dioxolane at RT is recommended.

The ashing rate for AR-P 6200 is 4 nm/min. The milling rate is 5 to 6 nm/min at 300V.

==Bilayer resist==

If you deposit AR-P 6200 resist on top of EL6 or EL9, Shiv recommends about 60 s in MIBK:IPA (1:3) during development as is usual with PMMA as the top layer.

==Further information==

See [http://www.allresist.com/downloads/ the Allresist website].

AR-P 6200 (CSAR) - Revision history

Harry at 10:01, 8 September 2025

Harry at 10:01, 8 September 2025