https://wiki.nbi.ku.dk/w/cleanroom/api.php?action=feedcontributions&feedformat=atom&user=Shivcleanroom - User contributions [en-gb]2026-04-21T23:44:48ZUser contributionsMediaWiki 1.43.8https://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Training&diff=2765Training2026-04-10T16:25:35Z<p>Shiv: /* Bruker Dimension Icon Atomic Force Microscope (AFM) */</p>
<hr />
<div>A prerequisite for using the cleanroom [[Tools|tools]] is that a [[About|cleanroom staff]] member has given the necessary instruction or training.<br />
This includes basic instruments such as hotplates and microscopes.<br />
For '''all''' training requests, please read the prerequisites below and afterwards contact [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk]. <br />
A cleanroom staff member will typically respond within one workday.<br />
Do not contact individual staff members for training. <br />
<br />
Once the user has completed the training, they are given booking rights in the [http://cleanroom.brickhost.com cleanroom booking system]. <br />
However, after a certain period of inactivity (typically 90 days) on a given tool, the booking rights will expire and the user will need to be retrained in order to continue using the tool.<br />
<br />
== Cleanroom General Introduction ==<br />
<br />
=== Cleanroom general introduction ===<br />
Request cleanroom introduction training via [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk].<br />
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* Name a superuser from your group who will follow you in the cleanroom 2-3 times after your training.<br />
* Introduction training requires acceptance from both of you and typically runs from 9.30 to 15.00.<br />
* Before training, read the safety information: https://wiki.nbi.ku.dk/cleanroom/Safety<br />
* Typical schedule:<br />
** 9.15-10.30: Cleanroom introduction<br />
** Coffee break<br />
** 10.45-12.00: Asher, spinners, and optical microscopes<br />
** Lunch break<br />
** 13.00-14.00: Practical information inside and outside the lab<br />
** 14.00-15.00: Q&A and account setup<br />
</div><br />
</div><br />
<br />
== Lithography ==<br />
<br />
=== Elionix 7000 (100 kV) ===<br />
Elionix 7000 training is for advanced users and requires prior cleanroom tool competency.<br />
<br />
Contact Harry (cleanroom@nbi.ku.dk) to request training.<br />
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==== Prerequisites ====<br />
* You must be at least a Master student or signed up for a long term (>6 months) project to be allowed to use the tool.<br />
* Elionix is a high level tool. Make sure you are already trained to:<br />
** Enter the cleanroom<br />
** Use the microscope, spinner, asher<br />
<br />
==== Training ====<br />
* You'll need 4 sessions to get trained on this tool.<br />
** Session 1 ( 1 hr.) - teaches you how to load/unload the sample and how to condition the beam.<br />
** Session 2 ( 3 hr.) - involves exposing alignment marks and test patterns (any design: preferably one half of the overlay ,so to understand alignment later ).<br />
** Session 3 ( 3 hr.) - involves using the exposed alignment marks for marker registration and exposing the 2nd pattern (i.e. the 2nd half of the overlay pattern).<br />
** Session 4 involves exposing a "real" pattern on a "real" chip on your own to gain access.<br />
<br />
==== Preparation ====<br />
Before any training slots are booked on the tool you'll need all of the following prepared:<br />
* Shadow senior users on the tool 2-3 times.<br />
* Chip (comfortable to handle) spin coated with resist. This chip will be used for sessions 1 & 2. Please be aware of the coating and baking parameters for the resist.<br />
* Any test design is preferred which has marks, overlay patterns that you will use to test alignment precision between two lithography steps. A Vernier pattern is commonly used. Feel free to test your ideas. Make sure you have something for both ''x'' and ''y'' directions.<br />
* Convert your design files into the Elionix exposure format .co7. This can be done using Beamer in 4th floor design computers.<br />
* Make sure all write fields are entirely in the positive coordinate space.<br />
* Make sure neither exposure will take longer than 15 minutes at 500 pA current and dose of 1000 uC/cm2.<br />
</div><br />
</div><br />
<br />
=== Elionix F-125 (125 kV at QuanTech) ===<br />
Contact Zhe Liu to arrange access and training for Elionix F-125.<br />
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<div class="mw-collapsible-content"><br />
* Please contact Zhe Liu ([mailto:zhe.liu@nbi.ku.dk zhe.liu@nbi.ku.dk])<br />
</div><br />
</div><br />
<br />
=== Heidelberg upg501 ===<br />
Prepare your design file and coated chip before requesting Heidelberg upg501 training.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b8e2d5; border-left:6px solid #14866d; background:#f2fbf8; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Have a design file ready. GDS, DXF or CIF format works fine. Make sure you are familiar with the design before your actual session.<br />
* Have a chip spin coated with an appropriate photoresist before the training session.<br />
** The photoresist is sensitive to white light. Use the yellow filter on the microscopes. The light source in the both scribers is white and will already expose your resist.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video and read the standard operating procedure on the [[Heidelberg µPG 501|Heidelberg µPG 501 tool page]]<br />
</div><br />
</div><br />
<br />
== Characterization ==<br />
<br />
=== Bruker Dimension Icon Atomic Force Microscope (AFM) ===<br />
Contact Nikki (cleanroom[at]nbi[dot]ku.dk) requesting AFM training.<br />
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* Have a sample ready that you want to characterise. Think about what you want to learn about the sample; step heights, roughness, etc.<br />
* Only ask for training if you plan on using the tool regularly.<br />
* Training is usually 2-3 sessions of 1.5 hours.<br />
</div><br />
</div><br />
<br />
=== JEOL 7800-F ===<br />
Prepare a real sample and imaging goals before booking JEOL 7800-F training.<br />
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* Training takes about 2-3 sessions.<br />
* You need a chip/sample to be imaged before a session is booked. <br />
* Be familiar with the materials on the sample to be imaged and what feature is it that is of critical interest -- something that makes or breaks your device.<br />
* Request the training session only once you have gathered the chips and information. <br />
* What is your project alias? If unsure, contact your supervisor first.<br />
</div><br />
</div><br />
<br />
=== JEOL 7800-F prime (QuanTech) ===<br />
Contact Zhe Liu to arrange access and training for JEOL 7800-F prime.<br />
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* Please contact Zhe Liu ([mailto:zhe.liu@nbi.ku.dk zhe.liu@nbi.ku.dk])<br />
</div><br />
</div><br />
<br />
=== Raith e-Line ===<br />
Bring a prepared design package for sessions 1 and 2, including alignment and overlay test patterns.<br />
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<div class="mw-collapsible-content"><br />
* A design (gds, dxf, cif) for sessions 1 & 2 with:<br />
** 4 alignment crosses (find out what marks work on the tool from your sub-group).<br />
** Something to break the symmetry so you can tell chip orientation with your bare eye.<br />
** A pattern that you will use to test overlay (alignment between two lithography steps). A Vernier pattern is commonly used. Feel free to test your ideas.<br />
** Something creative, somethin fun :) This is an exercise in learning CAD as well.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
</div><br />
</div><br />
<br />
=== Woollam alpha-SE Ellipsometer ===<br />
Request Woollam alpha-SE Ellipsometer training via [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk].<br />
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</div><br />
</div><br />
<br />
=== Filmetrics reflectometer ===<br />
Contact Zhe Liu to arrange access and training for the Filmetrics reflectometer.<br />
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<div class="mw-collapsible-content"><br />
* Please contact Zhe Liu ([mailto:zhe.liu@nbi.ku.dk zhe.liu@nbi.ku.dk])<br />
</div><br />
</div><br />
<br />
== Thin Film Deposition ==<br />
<br />
=== PLASSYS Evaporator ===<br />
Email your PLASSYS request with shadowing, sample, and process parameters.<br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Specify the required process parameters( material, thickness, tilt etc)<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
==== Training ====<br />
* You'll need 3 sessions to get trained on this tool.<br />
** Session 1 ( 1 hr.) - teaches you how to load/unload the sample and how to run a recipe. <br />
** Session 2 ( 2 hr.) - how to create your own recipe and run the process. <br />
** Session 3 ( 3 hr.) - sign off session <br />
</div><br />
</div><br />
<br />
=== AJA metallization, sputtering or ion milling ===<br />
Email your training request with shadowing, sample, tool, process, and recipe details for AJA.<br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Which tool you want to use: AJA1 or AJA2?<br />
* What process do you want to run ?<br />
* Either the recipe name or specify the required process parameters.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video on how to load/unload and read the standard operating procedures on the [[AJA Systems|AJA Systems tool page]]<br />
</div><br />
</div><br />
<br />
=== ALD 1 ===<br />
Email your ALD 1 request with shadowing, sample, and full process details.<br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Which tool you want to use.<br />
* What process steps you want to run.<br />
** Either the recipe name or all required process parameters.<br />
** How long does the process take.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video(s) and read the standard operating procedure on the [[Cambridge ALD|ALD tool page]].<br />
</div><br />
</div><br />
<br />
=== ALD 2 ===<br />
Email your ALD 2 request with shadowing, sample, and full process details.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #f0d4ac; border-left:6px solid #c77700; background:#fff8ef; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
<div class="mw-collapsible-toggle" style="text-align:right; margin:-0.62em 0 0.25em; line-height:1;">'''Expand'''</div><br />
<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Which tool you want to use.<br />
* What process steps you want to run.<br />
** Either the recipe name or all required process parameters.<br />
** How long does the process take.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video(s) and read the standard operating procedure on the [[Cambridge ALD|ALD tool page]].<br />
</div><br />
</div><br />
<br />
== Packaging ==<br />
<br />
=== F&S autobonder ===<br />
Prepare shadowing and bonding documentation, then request F&S autobonder training.<br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
<br />
* Shadow colleagues using the tool 2-3 times. <br />
* You must have a '''chip''' for bonding.<br />
* You must know which '''daughterboard''' you will use for bonding.<br />
* You must know what material you use to '''mount''' the chip to the daughterboard (silver paint, PMMA or whatever is specific to your measurement).<br />
* You must prepare a '''bonding schematic''' and have one of your team members verify that it is correct.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
* Read through the wiki page: https://wiki.nbi.ku.dk/cleanroom/FS_bonder <br />
* Request a training session at this point.<br />
<br />
Two training sessions are required to get access to the bonder:<br />
<br />
# 3 hours: Basic bonder training and chip bonding<br />
# 2 hours: Sign-off session<br />
</div><br />
</div><br />
<br />
=== Manual bonder ===<br />
Request manual bonder training via [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk].<br />
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</div><br />
</div><br />
<br />
== Miscellaneous ==<br />
<br />
=== Micromanipulator ===<br />
Complete group-level training first, then request a micromanipulator sign-off session.<br />
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<div class="mw-collapsible-content"><br />
* Please get trained within your research group first. Then request a sign-off session.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
</div><br />
</div><br />
<br />
[[Category:Tools]]</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Training&diff=2764Training2026-04-10T16:23:36Z<p>Shiv: /* Elionix 7000 (100 kV) */</p>
<hr />
<div>A prerequisite for using the cleanroom [[Tools|tools]] is that a [[About|cleanroom staff]] member has given the necessary instruction or training.<br />
This includes basic instruments such as hotplates and microscopes.<br />
For '''all''' training requests, please read the prerequisites below and afterwards contact [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk]. <br />
A cleanroom staff member will typically respond within one workday.<br />
Do not contact individual staff members for training. <br />
<br />
Once the user has completed the training, they are given booking rights in the [http://cleanroom.brickhost.com cleanroom booking system]. <br />
However, after a certain period of inactivity (typically 90 days) on a given tool, the booking rights will expire and the user will need to be retrained in order to continue using the tool.<br />
<br />
== Cleanroom General Introduction ==<br />
<br />
=== Cleanroom general introduction ===<br />
Request cleanroom introduction training via [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk].<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #d8dde3; border-left:6px solid #72777d; background:#f8f9fa; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Name a superuser from your group who will follow you in the cleanroom 2-3 times after your training.<br />
* Introduction training requires acceptance from both of you and typically runs from 9.30 to 15.00.<br />
* Before training, read the safety information: https://wiki.nbi.ku.dk/cleanroom/Safety<br />
* Typical schedule:<br />
** 9.15-10.30: Cleanroom introduction<br />
** Coffee break<br />
** 10.45-12.00: Asher, spinners, and optical microscopes<br />
** Lunch break<br />
** 13.00-14.00: Practical information inside and outside the lab<br />
** 14.00-15.00: Q&A and account setup<br />
</div><br />
</div><br />
<br />
== Lithography ==<br />
<br />
=== Elionix 7000 (100 kV) ===<br />
Elionix 7000 training is for advanced users and requires prior cleanroom tool competency.<br />
<br />
Contact Harry (cleanroom@nbi.ku.dk) to request training.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b8e2d5; border-left:6px solid #14866d; background:#f2fbf8; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
==== Prerequisites ====<br />
* You must be at least a Master student or signed up for a long term (>6 months) project to be allowed to use the tool.<br />
* Elionix is a high level tool. Make sure you are already trained to:<br />
** Enter the cleanroom<br />
** Use the microscope, spinner, asher<br />
<br />
==== Training ====<br />
* You'll need 4 sessions to get trained on this tool.<br />
** Session 1 ( 1 hr.) - teaches you how to load/unload the sample and how to condition the beam.<br />
** Session 2 ( 3 hr.) - involves exposing alignment marks and test patterns (any design: preferably one half of the overlay ,so to understand alignment later ).<br />
** Session 3 ( 3 hr.) - involves using the exposed alignment marks for marker registration and exposing the 2nd pattern (i.e. the 2nd half of the overlay pattern).<br />
** Session 4 involves exposing a "real" pattern on a "real" chip on your own to gain access.<br />
<br />
==== Preparation ====<br />
Before any training slots are booked on the tool you'll need all of the following prepared:<br />
* Shadow senior users on the tool 2-3 times.<br />
* Chip (comfortable to handle) spin coated with resist. This chip will be used for sessions 1 & 2. Please be aware of the coating and baking parameters for the resist.<br />
* Any test design is preferred which has marks, overlay patterns that you will use to test alignment precision between two lithography steps. A Vernier pattern is commonly used. Feel free to test your ideas. Make sure you have something for both ''x'' and ''y'' directions.<br />
* Convert your design files into the Elionix exposure format .co7. This can be done using Beamer in 4th floor design computers.<br />
* Make sure all write fields are entirely in the positive coordinate space.<br />
* Make sure neither exposure will take longer than 15 minutes at 500 pA current and dose of 1000 uC/cm2.<br />
</div><br />
</div><br />
<br />
=== Elionix F-125 (125 kV at QuanTech) ===<br />
Contact Zhe Liu to arrange access and training for Elionix F-125.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b8e2d5; border-left:6px solid #14866d; background:#f2fbf8; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Please contact Zhe Liu ([mailto:zhe.liu@nbi.ku.dk zhe.liu@nbi.ku.dk])<br />
</div><br />
</div><br />
<br />
=== Heidelberg upg501 ===<br />
Prepare your design file and coated chip before requesting Heidelberg upg501 training.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b8e2d5; border-left:6px solid #14866d; background:#f2fbf8; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Have a design file ready. GDS, DXF or CIF format works fine. Make sure you are familiar with the design before your actual session.<br />
* Have a chip spin coated with an appropriate photoresist before the training session.<br />
** The photoresist is sensitive to white light. Use the yellow filter on the microscopes. The light source in the both scribers is white and will already expose your resist.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video and read the standard operating procedure on the [[Heidelberg µPG 501|Heidelberg µPG 501 tool page]]<br />
</div><br />
</div><br />
<br />
== Characterization ==<br />
<br />
=== Bruker Dimension Icon Atomic Force Microscope (AFM) ===<br />
Have a sample ready and a clear characterization goal before requesting AFM training.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #c9ddf8; border-left:6px solid #3366cc; background:#f5f9ff; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Have a sample ready that you want to characterise. Think about what you want to learn about the sample; step heights, roughness, etc.<br />
* Only ask for training if you plan on using the tool regularly.<br />
* Training is usually 2-3 sessions of 1.5 hours.<br />
</div><br />
</div><br />
<br />
=== JEOL 7800-F ===<br />
Prepare a real sample and imaging goals before booking JEOL 7800-F training.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b7e1c1; border-left:6px solid #2a9d5b; background:#f2fbf5; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Training takes about 2-3 sessions.<br />
* You need a chip/sample to be imaged before a session is booked. <br />
* Be familiar with the materials on the sample to be imaged and what feature is it that is of critical interest -- something that makes or breaks your device.<br />
* Request the training session only once you have gathered the chips and information. <br />
* What is your project alias? If unsure, contact your supervisor first.<br />
</div><br />
</div><br />
<br />
=== JEOL 7800-F prime (QuanTech) ===<br />
Contact Zhe Liu to arrange access and training for JEOL 7800-F prime.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b7e1c1; border-left:6px solid #2a9d5b; background:#f2fbf5; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Please contact Zhe Liu ([mailto:zhe.liu@nbi.ku.dk zhe.liu@nbi.ku.dk])<br />
</div><br />
</div><br />
<br />
=== Raith e-Line ===<br />
Bring a prepared design package for sessions 1 and 2, including alignment and overlay test patterns.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b8e2d5; border-left:6px solid #14866d; background:#f2fbf8; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* A design (gds, dxf, cif) for sessions 1 & 2 with:<br />
** 4 alignment crosses (find out what marks work on the tool from your sub-group).<br />
** Something to break the symmetry so you can tell chip orientation with your bare eye.<br />
** A pattern that you will use to test overlay (alignment between two lithography steps). A Vernier pattern is commonly used. Feel free to test your ideas.<br />
** Something creative, somethin fun :) This is an exercise in learning CAD as well.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
</div><br />
</div><br />
<br />
=== Woollam alpha-SE Ellipsometer ===<br />
Request Woollam alpha-SE Ellipsometer training via [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk].<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #d8dde3; border-left:6px solid #72777d; background:#f8f9fa; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
</div><br />
</div><br />
<br />
=== Filmetrics reflectometer ===<br />
Contact Zhe Liu to arrange access and training for the Filmetrics reflectometer.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b7e1c1; border-left:6px solid #2a9d5b; background:#f2fbf5; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Please contact Zhe Liu ([mailto:zhe.liu@nbi.ku.dk zhe.liu@nbi.ku.dk])<br />
</div><br />
</div><br />
<br />
== Thin Film Deposition ==<br />
<br />
=== PLASSYS Evaporator ===<br />
Email your PLASSYS request with shadowing, sample, and process parameters.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #f0d4ac; border-left:6px solid #c77700; background:#fff8ef; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Specify the required process parameters( material, thickness, tilt etc)<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
==== Training ====<br />
* You'll need 3 sessions to get trained on this tool.<br />
** Session 1 ( 1 hr.) - teaches you how to load/unload the sample and how to run a recipe. <br />
** Session 2 ( 2 hr.) - how to create your own recipe and run the process. <br />
** Session 3 ( 3 hr.) - sign off session <br />
</div><br />
</div><br />
<br />
=== AJA metallization, sputtering or ion milling ===<br />
Email your training request with shadowing, sample, tool, process, and recipe details for AJA.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #f0d4ac; border-left:6px solid #c77700; background:#fff8ef; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Which tool you want to use: AJA1 or AJA2?<br />
* What process do you want to run ?<br />
* Either the recipe name or specify the required process parameters.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video on how to load/unload and read the standard operating procedures on the [[AJA Systems|AJA Systems tool page]]<br />
</div><br />
</div><br />
<br />
=== ALD 1 ===<br />
Email your ALD 1 request with shadowing, sample, and full process details.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #f0d4ac; border-left:6px solid #c77700; background:#fff8ef; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Which tool you want to use.<br />
* What process steps you want to run.<br />
** Either the recipe name or all required process parameters.<br />
** How long does the process take.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video(s) and read the standard operating procedure on the [[Cambridge ALD|ALD tool page]].<br />
</div><br />
</div><br />
<br />
=== ALD 2 ===<br />
Email your ALD 2 request with shadowing, sample, and full process details.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #f0d4ac; border-left:6px solid #c77700; background:#fff8ef; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Which tool you want to use.<br />
* What process steps you want to run.<br />
** Either the recipe name or all required process parameters.<br />
** How long does the process take.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video(s) and read the standard operating procedure on the [[Cambridge ALD|ALD tool page]].<br />
</div><br />
</div><br />
<br />
== Packaging ==<br />
<br />
=== F&S autobonder ===<br />
Prepare shadowing and bonding documentation, then request F&S autobonder training.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #d9c8b7; border-left:6px solid #8b5e3c; background:#fbf6f1; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
<br />
* Shadow colleagues using the tool 2-3 times. <br />
* You must have a '''chip''' for bonding.<br />
* You must know which '''daughterboard''' you will use for bonding.<br />
* You must know what material you use to '''mount''' the chip to the daughterboard (silver paint, PMMA or whatever is specific to your measurement).<br />
* You must prepare a '''bonding schematic''' and have one of your team members verify that it is correct.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
* Read through the wiki page: https://wiki.nbi.ku.dk/cleanroom/FS_bonder <br />
* Request a training session at this point.<br />
<br />
Two training sessions are required to get access to the bonder:<br />
<br />
# 3 hours: Basic bonder training and chip bonding<br />
# 2 hours: Sign-off session<br />
</div><br />
</div><br />
<br />
=== Manual bonder ===<br />
Request manual bonder training via [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk].<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #d8dde3; border-left:6px solid #72777d; background:#f8f9fa; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
</div><br />
</div><br />
<br />
== Miscellaneous ==<br />
<br />
=== Micromanipulator ===<br />
Complete group-level training first, then request a micromanipulator sign-off session.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #d9c8b7; border-left:6px solid #8b5e3c; background:#fbf6f1; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Please get trained within your research group first. Then request a sign-off session.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
</div><br />
</div><br />
<br />
[[Category:Tools]]</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Training&diff=2762Training2026-04-10T16:22:20Z<p>Shiv: /* Elionix 7000 (100 kV) */</p>
<hr />
<div>A prerequisite for using the cleanroom [[Tools|tools]] is that a [[About|cleanroom staff]] member has given the necessary instruction or training.<br />
This includes basic instruments such as hotplates and microscopes.<br />
For '''all''' training requests, please read the prerequisites below and afterwards contact [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk]. <br />
A cleanroom staff member will typically respond within one workday.<br />
Do not contact individual staff members for training. <br />
<br />
Once the user has completed the training, they are given booking rights in the [http://cleanroom.brickhost.com cleanroom booking system]. <br />
However, after a certain period of inactivity (typically 90 days) on a given tool, the booking rights will expire and the user will need to be retrained in order to continue using the tool.<br />
<br />
== Cleanroom General Introduction ==<br />
<br />
=== Cleanroom general introduction ===<br />
Request cleanroom introduction training via [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk].<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #d8dde3; border-left:6px solid #72777d; background:#f8f9fa; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Name a superuser from your group who will follow you in the cleanroom 2-3 times after your training.<br />
* Introduction training requires acceptance from both of you and typically runs from 9.30 to 15.00.<br />
* Before training, read the safety information: https://wiki.nbi.ku.dk/cleanroom/Safety<br />
* Typical schedule:<br />
** 9.15-10.30: Cleanroom introduction<br />
** Coffee break<br />
** 10.45-12.00: Asher, spinners, and optical microscopes<br />
** Lunch break<br />
** 13.00-14.00: Practical information inside and outside the lab<br />
** 14.00-15.00: Q&A and account setup<br />
</div><br />
</div><br />
<br />
== Lithography ==<br />
<br />
=== Elionix 7000 (100 kV) ===<br />
Contact Harry (cleanroom@nbi.ku.dk) to request training<br />
Elionix 7000 training is for advanced users and requires prior cleanroom tool competency.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b8e2d5; border-left:6px solid #14866d; background:#f2fbf8; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
==== Prerequisites ====<br />
* You must be at least a Master student or signed up for a long term (>6 months) project to be allowed to use the tool.<br />
* Elionix is a high level tool. Make sure you are already trained to:<br />
** Enter the cleanroom<br />
** Use the microscope, spinner, asher<br />
<br />
==== Training ====<br />
* You'll need 4 sessions to get trained on this tool.<br />
** Session 1 ( 1 hr.) - teaches you how to load/unload the sample and how to condition the beam.<br />
** Session 2 ( 3 hr.) - involves exposing alignment marks and test patterns (any design: preferably one half of the overlay ,so to understand alignment later ).<br />
** Session 3 ( 3 hr.) - involves using the exposed alignment marks for marker registration and exposing the 2nd pattern (i.e. the 2nd half of the overlay pattern).<br />
** Session 4 involves exposing a "real" pattern on a "real" chip on your own to gain access.<br />
<br />
==== Preparation ====<br />
Before any training slots are booked on the tool you'll need all of the following prepared:<br />
* Shadow senior users on the tool 2-3 times.<br />
* Chip (comfortable to handle) spin coated with resist. This chip will be used for sessions 1 & 2. Please be aware of the coating and baking parameters for the resist.<br />
* Any test design is preferred which has marks, overlay patterns that you will use to test alignment precision between two lithography steps. A Vernier pattern is commonly used. Feel free to test your ideas. Make sure you have something for both ''x'' and ''y'' directions.<br />
* Convert your design files into the Elionix exposure format .co7. This can be done using Beamer in 4th floor design computers.<br />
* Make sure all write fields are entirely in the positive coordinate space.<br />
* Make sure neither exposure will take longer than 15 minutes at 500 pA current and dose of 1000 uC/cm2.<br />
</div><br />
</div><br />
<br />
=== Elionix F-125 (125 kV at QuanTech) ===<br />
Contact Zhe Liu to arrange access and training for Elionix F-125.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b8e2d5; border-left:6px solid #14866d; background:#f2fbf8; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
<div class="mw-collapsible-toggle" style="text-align:right; margin:-0.62em 0 0.25em; line-height:1;">'''Expand'''</div><br />
<div class="mw-collapsible-content"><br />
* Please contact Zhe Liu ([mailto:zhe.liu@nbi.ku.dk zhe.liu@nbi.ku.dk])<br />
</div><br />
</div><br />
<br />
=== Heidelberg upg501 ===<br />
Prepare your design file and coated chip before requesting Heidelberg upg501 training.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b8e2d5; border-left:6px solid #14866d; background:#f2fbf8; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
<div class="mw-collapsible-toggle" style="text-align:right; margin:-0.62em 0 0.25em; line-height:1;">'''Expand'''</div><br />
<div class="mw-collapsible-content"><br />
* Have a design file ready. GDS, DXF or CIF format works fine. Make sure you are familiar with the design before your actual session.<br />
* Have a chip spin coated with an appropriate photoresist before the training session.<br />
** The photoresist is sensitive to white light. Use the yellow filter on the microscopes. The light source in the both scribers is white and will already expose your resist.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video and read the standard operating procedure on the [[Heidelberg µPG 501|Heidelberg µPG 501 tool page]]<br />
</div><br />
</div><br />
<br />
== Characterization ==<br />
<br />
=== Bruker Dimension Icon Atomic Force Microscope (AFM) ===<br />
Have a sample ready and a clear characterization goal before requesting AFM training.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #c9ddf8; border-left:6px solid #3366cc; background:#f5f9ff; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
<div class="mw-collapsible-toggle" style="text-align:right; margin:-0.62em 0 0.25em; line-height:1;">'''Expand'''</div><br />
<div class="mw-collapsible-content"><br />
* Have a sample ready that you want to characterise. Think about what you want to learn about the sample; step heights, roughness, etc.<br />
* Only ask for training if you plan on using the tool regularly.<br />
* Training is usually 2-3 sessions of 1.5 hours.<br />
</div><br />
</div><br />
<br />
=== JEOL 7800-F ===<br />
Prepare a real sample and imaging goals before booking JEOL 7800-F training.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b7e1c1; border-left:6px solid #2a9d5b; background:#f2fbf5; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
<div class="mw-collapsible-toggle" style="text-align:right; margin:-0.62em 0 0.25em; line-height:1;">'''Expand'''</div><br />
<div class="mw-collapsible-content"><br />
* Training takes about 2-3 sessions.<br />
* You need a chip/sample to be imaged before a session is booked. <br />
* Be familiar with the materials on the sample to be imaged and what feature is it that is of critical interest -- something that makes or breaks your device.<br />
* Request the training session only once you have gathered the chips and information. <br />
* What is your project alias? If unsure, contact your supervisor first.<br />
</div><br />
</div><br />
<br />
=== JEOL 7800-F prime (QuanTech) ===<br />
Contact Zhe Liu to arrange access and training for JEOL 7800-F prime.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b7e1c1; border-left:6px solid #2a9d5b; background:#f2fbf5; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
<div class="mw-collapsible-toggle" style="text-align:right; margin:-0.62em 0 0.25em; line-height:1;">'''Expand'''</div><br />
<div class="mw-collapsible-content"><br />
* Please contact Zhe Liu ([mailto:zhe.liu@nbi.ku.dk zhe.liu@nbi.ku.dk])<br />
</div><br />
</div><br />
<br />
=== Raith e-Line ===<br />
Bring a prepared design package for sessions 1 and 2, including alignment and overlay test patterns.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b8e2d5; border-left:6px solid #14866d; background:#f2fbf8; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
<div class="mw-collapsible-toggle" style="text-align:right; margin:-0.62em 0 0.25em; line-height:1;">'''Expand'''</div><br />
<div class="mw-collapsible-content"><br />
* A design (gds, dxf, cif) for sessions 1 & 2 with:<br />
** 4 alignment crosses (find out what marks work on the tool from your sub-group).<br />
** Something to break the symmetry so you can tell chip orientation with your bare eye.<br />
** A pattern that you will use to test overlay (alignment between two lithography steps). A Vernier pattern is commonly used. Feel free to test your ideas.<br />
** Something creative, somethin fun :) This is an exercise in learning CAD as well.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
</div><br />
</div><br />
<br />
=== Woollam alpha-SE Ellipsometer ===<br />
Request Woollam alpha-SE Ellipsometer training via [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk].<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #d8dde3; border-left:6px solid #72777d; background:#f8f9fa; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
<div class="mw-collapsible-toggle" style="text-align:right; margin:-0.62em 0 0.25em; line-height:1;">'''Expand'''</div><br />
<div class="mw-collapsible-content"><br />
</div><br />
</div><br />
<br />
=== Filmetrics reflectometer ===<br />
Contact Zhe Liu to arrange access and training for the Filmetrics reflectometer.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b7e1c1; border-left:6px solid #2a9d5b; background:#f2fbf5; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Please contact Zhe Liu ([mailto:zhe.liu@nbi.ku.dk zhe.liu@nbi.ku.dk])<br />
</div><br />
</div><br />
<br />
== Thin Film Deposition ==<br />
<br />
=== PLASSYS Evaporator ===<br />
Email your PLASSYS request with shadowing, sample, and process parameters.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #f0d4ac; border-left:6px solid #c77700; background:#fff8ef; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Specify the required process parameters( material, thickness, tilt etc)<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
==== Training ====<br />
* You'll need 3 sessions to get trained on this tool.<br />
** Session 1 ( 1 hr.) - teaches you how to load/unload the sample and how to run a recipe. <br />
** Session 2 ( 2 hr.) - how to create your own recipe and run the process. <br />
** Session 3 ( 3 hr.) - sign off session <br />
</div><br />
</div><br />
<br />
=== AJA metallization, sputtering or ion milling ===<br />
Email your training request with shadowing, sample, tool, process, and recipe details for AJA.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #f0d4ac; border-left:6px solid #c77700; background:#fff8ef; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Which tool you want to use: AJA1 or AJA2?<br />
* What process do you want to run ?<br />
* Either the recipe name or specify the required process parameters.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video on how to load/unload and read the standard operating procedures on the [[AJA Systems|AJA Systems tool page]]<br />
</div><br />
</div><br />
<br />
=== ALD 1 ===<br />
Email your ALD 1 request with shadowing, sample, and full process details.<br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Which tool you want to use.<br />
* What process steps you want to run.<br />
** Either the recipe name or all required process parameters.<br />
** How long does the process take.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video(s) and read the standard operating procedure on the [[Cambridge ALD|ALD tool page]].<br />
</div><br />
</div><br />
<br />
=== ALD 2 ===<br />
Email your ALD 2 request with shadowing, sample, and full process details.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #f0d4ac; border-left:6px solid #c77700; background:#fff8ef; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Which tool you want to use.<br />
* What process steps you want to run.<br />
** Either the recipe name or all required process parameters.<br />
** How long does the process take.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video(s) and read the standard operating procedure on the [[Cambridge ALD|ALD tool page]].<br />
</div><br />
</div><br />
<br />
== Packaging ==<br />
<br />
=== F&S autobonder ===<br />
Prepare shadowing and bonding documentation, then request F&S autobonder training.<br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
<br />
* Shadow colleagues using the tool 2-3 times. <br />
* You must have a '''chip''' for bonding.<br />
* You must know which '''daughterboard''' you will use for bonding.<br />
* You must know what material you use to '''mount''' the chip to the daughterboard (silver paint, PMMA or whatever is specific to your measurement).<br />
* You must prepare a '''bonding schematic''' and have one of your team members verify that it is correct.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
* Read through the wiki page: https://wiki.nbi.ku.dk/cleanroom/FS_bonder <br />
* Request a training session at this point.<br />
<br />
Two training sessions are required to get access to the bonder:<br />
<br />
# 3 hours: Basic bonder training and chip bonding<br />
# 2 hours: Sign-off session<br />
</div><br />
</div><br />
<br />
=== Manual bonder ===<br />
Request manual bonder training via [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk].<br />
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<div class="mw-collapsible-content"><br />
</div><br />
</div><br />
<br />
== Miscellaneous ==<br />
<br />
=== Micromanipulator ===<br />
Complete group-level training first, then request a micromanipulator sign-off session.<br />
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<div class="mw-collapsible-content"><br />
* Please get trained within your research group first. Then request a sign-off session.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
</div><br />
</div><br />
<br />
[[Category:Tools]]</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Training&diff=2759Training2026-04-10T16:08:34Z<p>Shiv: </p>
<hr />
<div>A prerequisite for using the cleanroom [[Tools|tools]] is that a [[About|cleanroom staff]] member has given the necessary instruction or training.<br />
This includes basic instruments such as hotplates and microscopes.<br />
For '''all''' training requests, please read the prerequisites below and afterwards contact [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk]. <br />
A cleanroom staff member will typically respond within one workday.<br />
Do not contact individual staff members for training. <br />
<br />
Once the user has completed the training, they are given booking rights in the [http://cleanroom.brickhost.com cleanroom booking system]. <br />
However, after a certain period of inactivity (typically 90 days) on a given tool, the booking rights will expire and the user will need to be retrained in order to continue using the tool.<br />
<br />
== Cleanroom General Introduction ==<br />
<br />
=== Cleanroom general introduction ===<br />
Request cleanroom introduction training via [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk].<br />
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<div class="mw-collapsible-content"><br />
* Name a superuser from your group who will follow you in the cleanroom 2-3 times after your training.<br />
* Introduction training requires acceptance from both of you and typically runs from 9.30 to 15.00.<br />
* Before training, read the safety information: https://wiki.nbi.ku.dk/cleanroom/Safety<br />
* Typical schedule:<br />
** 9.15-10.30: Cleanroom introduction<br />
** Coffee break<br />
** 10.45-12.00: Asher, spinners, and optical microscopes<br />
** Lunch break<br />
** 13.00-14.00: Practical information inside and outside the lab<br />
** 14.00-15.00: Q&A and account setup<br />
</div><br />
</div><br />
<br />
== Lithography ==<br />
<br />
=== Elionix 7000 (100 kV) ===<br />
Elionix 7000 training is for advanced users and requires prior cleanroom tool competency.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b8e2d5; border-left:6px solid #14866d; background:#f2fbf8; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
==== Prerequisites ====<br />
* You must be at least a Master student or signed up for a long term (>6 months) project to be allowed to use the tool.<br />
* Elionix is a high level tool. Make sure you are already trained to:<br />
** Enter the cleanroom<br />
** Use the microscope, spinner, asher<br />
<br />
==== Training ====<br />
* You'll need 4 sessions to get trained on this tool.<br />
** Session 1 ( 1 hr.) - teaches you how to load/unload the sample and how to condition the beam.<br />
** Session 2 ( 3 hr.) - involves exposing alignment marks and test patterns (any design: preferably one half of the overlay ,so to understand alignment later ).<br />
** Session 3 ( 3 hr.) - involves using the exposed alignment marks for marker registration and exposing the 2nd pattern (i.e. the 2nd half of the overlay pattern).<br />
** Session 4 involves exposing a "real" pattern on a "real" chip on your own to gain access.<br />
<br />
==== Preparation ====<br />
Before any training slots are booked on the tool you'll need all of the following prepared:<br />
* Shadow senior users on the tool 2-3 times.<br />
* Chip (comfortable to handle) spin coated with resist. This chip will be used for sessions 1 & 2. Please be aware of the coating and baking parameters for the resist.<br />
* Any test design is preferred which has marks, overlay patterns that you will use to test alignment precision between two lithography steps. A Vernier pattern is commonly used. Feel free to test your ideas. Make sure you have something for both ''x'' and ''y'' directions.<br />
* Convert your design files into the Elionix exposure format .co7. This can be done using Beamer in 4th floor design computers.<br />
* Make sure all write fields are entirely in the positive coordinate space.<br />
* Make sure neither exposure will take longer than 15 minutes at 500 pA current and dose of 1000 uC/cm2.<br />
</div><br />
</div><br />
<br />
=== Elionix F-125 (125 kV at QuanTech) ===<br />
Contact Zhe Liu to arrange access and training for Elionix F-125.<br />
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<div class="mw-collapsible-content"><br />
* Please contact Zhe Liu ([mailto:zhe.liu@nbi.ku.dk zhe.liu@nbi.ku.dk])<br />
</div><br />
</div><br />
<br />
=== Heidelberg upg501 ===<br />
Prepare your design file and coated chip before requesting Heidelberg upg501 training.<br />
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<div class="mw-collapsible-content"><br />
* Have a design file ready. GDS, DXF or CIF format works fine. Make sure you are familiar with the design before your actual session.<br />
* Have a chip spin coated with an appropriate photoresist before the training session.<br />
** The photoresist is sensitive to white light. Use the yellow filter on the microscopes. The light source in the both scribers is white and will already expose your resist.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video and read the standard operating procedure on the [[Heidelberg µPG 501|Heidelberg µPG 501 tool page]]<br />
</div><br />
</div><br />
<br />
== Characterization ==<br />
<br />
=== Bruker Dimension Icon Atomic Force Microscope (AFM) ===<br />
Have a sample ready and a clear characterization goal before requesting AFM training.<br />
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<div class="mw-collapsible-content"><br />
* Have a sample ready that you want to characterise. Think about what you want to learn about the sample; step heights, roughness, etc.<br />
* Only ask for training if you plan on using the tool regularly.<br />
* Training is usually 2-3 sessions of 1.5 hours.<br />
</div><br />
</div><br />
<br />
=== JEOL 7800-F ===<br />
Prepare a real sample and imaging goals before booking JEOL 7800-F training.<br />
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<div class="mw-collapsible-content"><br />
* Training takes about 2-3 sessions.<br />
* You need a chip/sample to be imaged before a session is booked. <br />
* Be familiar with the materials on the sample to be imaged and what feature is it that is of critical interest -- something that makes or breaks your device.<br />
* Request the training session only once you have gathered the chips and information. <br />
* What is your project alias? If unsure, contact your supervisor first.<br />
</div><br />
</div><br />
<br />
=== JEOL 7800-F prime (QuanTech) ===<br />
Contact Zhe Liu to arrange access and training for JEOL 7800-F prime.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b7e1c1; border-left:6px solid #2a9d5b; background:#f2fbf5; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Please contact Zhe Liu ([mailto:zhe.liu@nbi.ku.dk zhe.liu@nbi.ku.dk])<br />
</div><br />
</div><br />
<br />
=== Raith e-Line ===<br />
Bring a prepared design package for sessions 1 and 2, including alignment and overlay test patterns.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b8e2d5; border-left:6px solid #14866d; background:#f2fbf8; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* A design (gds, dxf, cif) for sessions 1 & 2 with:<br />
** 4 alignment crosses (find out what marks work on the tool from your sub-group).<br />
** Something to break the symmetry so you can tell chip orientation with your bare eye.<br />
** A pattern that you will use to test overlay (alignment between two lithography steps). A Vernier pattern is commonly used. Feel free to test your ideas.<br />
** Something creative, somethin fun :) This is an exercise in learning CAD as well.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
</div><br />
</div><br />
<br />
=== Woollam alpha-SE Ellipsometer ===<br />
Request Woollam alpha-SE Ellipsometer training via [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk].<br />
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<div class="mw-collapsible-content"><br />
</div><br />
</div><br />
<br />
=== Filmetrics reflectometer ===<br />
Contact Zhe Liu to arrange access and training for the Filmetrics reflectometer.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b7e1c1; border-left:6px solid #2a9d5b; background:#f2fbf5; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Please contact Zhe Liu ([mailto:zhe.liu@nbi.ku.dk zhe.liu@nbi.ku.dk])<br />
</div><br />
</div><br />
<br />
== Thin Film Deposition ==<br />
<br />
=== PLASSYS Evaporator ===<br />
Email your PLASSYS request with shadowing, sample, and process parameters.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #f0d4ac; border-left:6px solid #c77700; background:#fff8ef; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Specify the required process parameters( material, thickness, tilt etc)<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
==== Training ====<br />
* You'll need 3 sessions to get trained on this tool.<br />
** Session 1 ( 1 hr.) - teaches you how to load/unload the sample and how to run a recipe. <br />
** Session 2 ( 2 hr.) - how to create your own recipe and run the process. <br />
** Session 3 ( 3 hr.) - sign off session <br />
</div><br />
</div><br />
<br />
=== AJA metallization, sputtering or ion milling ===<br />
Email your training request with shadowing, sample, tool, process, and recipe details for AJA.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #f0d4ac; border-left:6px solid #c77700; background:#fff8ef; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Which tool you want to use: AJA1 or AJA2?<br />
* What process do you want to run ?<br />
* Either the recipe name or specify the required process parameters.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video on how to load/unload and read the standard operating procedures on the [[AJA Systems|AJA Systems tool page]]<br />
</div><br />
</div><br />
<br />
=== ALD 1 ===<br />
Email your ALD 1 request with shadowing, sample, and full process details.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #f0d4ac; border-left:6px solid #c77700; background:#fff8ef; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Which tool you want to use.<br />
* What process steps you want to run.<br />
** Either the recipe name or all required process parameters.<br />
** How long does the process take.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video(s) and read the standard operating procedure on the [[Cambridge ALD|ALD tool page]].<br />
</div><br />
</div><br />
<br />
=== ALD 2 ===<br />
Email your ALD 2 request with shadowing, sample, and full process details.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #f0d4ac; border-left:6px solid #c77700; background:#fff8ef; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Which tool you want to use.<br />
* What process steps you want to run.<br />
** Either the recipe name or all required process parameters.<br />
** How long does the process take.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video(s) and read the standard operating procedure on the [[Cambridge ALD|ALD tool page]].<br />
</div><br />
</div><br />
<br />
== Packaging ==<br />
<br />
=== F&S autobonder ===<br />
Prepare shadowing and bonding documentation, then request F&S autobonder training.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #d9c8b7; border-left:6px solid #8b5e3c; background:#fbf6f1; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
<br />
* Shadow colleagues using the tool 2-3 times. <br />
* You must have a '''chip''' for bonding.<br />
* You must know which '''daughterboard''' you will use for bonding.<br />
* You must know what material you use to '''mount''' the chip to the daughterboard (silver paint, PMMA or whatever is specific to your measurement).<br />
* You must prepare a '''bonding schematic''' and have one of your team members verify that it is correct.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
* Read through the wiki page: https://wiki.nbi.ku.dk/cleanroom/FS_bonder <br />
* Request a training session at this point.<br />
<br />
Two training sessions are required to get access to the bonder:<br />
<br />
# 3 hours: Basic bonder training and chip bonding<br />
# 2 hours: Sign-off session<br />
</div><br />
</div><br />
<br />
=== Manual bonder ===<br />
Request manual bonder training via [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk].<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #d8dde3; border-left:6px solid #72777d; background:#f8f9fa; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
</div><br />
</div><br />
<br />
== Miscellaneous ==<br />
<br />
=== Micromanipulator ===<br />
Complete group-level training first, then request a micromanipulator sign-off session.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #d9c8b7; border-left:6px solid #8b5e3c; background:#fbf6f1; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Please get trained within your research group first. Then request a sign-off session.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
</div><br />
</div><br />
<br />
[[Category:Tools]]</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Training&diff=2758Training2026-04-10T11:33:39Z<p>Shiv: </p>
<hr />
<div>A prerequisite for using the cleanroom [[Tools|tools]] is that a [[About|cleanroom staff]] member has given the necessary instruction or training.<br />
This includes basic instruments such as hotplates and microscopes.<br />
For '''all''' training requests, please read the prerequisites below and afterwards contact [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk]. <br />
A cleanroom staff member will typically respond within one workday.<br />
Do not contact individual staff members for training. <br />
<br />
Once the user has completed the training, they are given booking rights in the [http://cleanroom.brickhost.com cleanroom booking system]. <br />
However, after a certain period of inactivity (typically 90 days) on a given tool, the booking rights will expire and the user will need to be retrained in order to continue using the tool.<br />
<br />
== Cleanroom general introduction ==<br />
Request cleanroom introduction training via [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk].<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #d8dde3; border-left:6px solid #72777d; background:#f8f9fa; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Name a superuser from your group who will follow you in the cleanroom 2-3 times after your training.<br />
* Introduction training requires acceptance from both of you and typically runs from 9.30 to 15.00.<br />
* Before training, read the safety information: https://wiki.nbi.ku.dk/cleanroom/Safety<br />
* Typical schedule:<br />
** 9.15-10.30: Cleanroom introduction<br />
** Coffee break<br />
** 10.45-12.00: Asher, spinners, and optical microscopes<br />
** Lunch break<br />
** 13.00-14.00: Practical information inside and outside the lab<br />
** 14.00-15.00: Q&A and account setup<br />
</div><br />
</div><br />
<br />
== Bruker Dimension Icon Atomic Force Microscope (AFM) ==<br />
Have a sample ready and a clear characterization goal before requesting AFM training.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #c9ddf8; border-left:6px solid #3366cc; background:#f5f9ff; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Have a sample ready that you want to characterise. Think about what you want to learn about the sample; step heights, roughness, etc.<br />
* Only ask for training if you plan on using the tool regularly.<br />
* Training is usually 2-3 sessions of 1.5 hours.<br />
</div><br />
</div><br />
<br />
== Elionix 7000 (100 kV) ==<br />
Elionix 7000 training is for advanced users and requires prior cleanroom tool competency.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b8e2d5; border-left:6px solid #14866d; background:#f2fbf8; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
=== Prerequisites ===<br />
* You must be at least a Master student or signed up for a long term (>6 months) project to be allowed to use the tool.<br />
* Elionix is a high level tool. Make sure you are already trained to:<br />
** Enter the cleanroom<br />
** Use the microscope, spinner, asher<br />
<br />
=== Training ===<br />
* You'll need 4 sessions to get trained on this tool.<br />
** Session 1 ( 1 hr.) - teaches you how to load/unload the sample and how to condition the beam.<br />
** Session 2 ( 3 hr.) - involves exposing alignment marks and test patterns (any design: preferably one half of the overlay ,so to understand alignment later ).<br />
** Session 3 ( 3 hr.) - involves using the exposed alignment marks for marker registration and exposing the 2nd pattern (i.e. the 2nd half of the overlay pattern).<br />
** Session 4 involves exposing a "real" pattern on a "real" chip on your own to gain access.<br />
<br />
=== Preparation ===<br />
Before any training slots are booked on the tool you'll need all of the following prepared:<br />
* Shadow senior users on the tool 2-3 times.<br />
* Chip (comfortable to handle) spin coated with resist. This chip will be used for sessions 1 & 2. Please be aware of the coating and baking parameters for the resist.<br />
* Any test design is preferred which has marks, overlay patterns that you will use to test alignment precision between two lithography steps. A Vernier pattern is commonly used. Feel free to test your ideas. Make sure you have something for both ''x'' and ''y'' directions.<br />
* Convert your design files into the Elionix exposure format .co7. This can be done using Beamer in 4th floor design computers.<br />
* Make sure all write fields are entirely in the positive coordinate space.<br />
* Make sure neither exposure will take longer than 15 minutes at 500 pA current and dose of 1000 uC/cm2.<br />
</div><br />
</div><br />
<br />
== Elionix F-125 (125 kV at QuanTech) ==<br />
Contact Zhe Liu to arrange access and training for Elionix F-125.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b8e2d5; border-left:6px solid #14866d; background:#f2fbf8; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Please contact Zhe Liu ([mailto:zhe.liu@nbi.ku.dk zhe.liu@nbi.ku.dk])<br />
</div><br />
</div><br />
<br />
== Heidelberg upg501 ==<br />
Prepare your design file and coated chip before requesting Heidelberg upg501 training.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b8e2d5; border-left:6px solid #14866d; background:#f2fbf8; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Have a design file ready. GDS, DXF or CIF format works fine. Make sure you are familiar with the design before your actual session.<br />
* Have a chip spin coated with an appropriate photoresist before the training session.<br />
** The photoresist is sensitive to white light. Use the yellow filter on the microscopes. The light source in the both scribers is white and will already expose your resist.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video and read the standard operating procedure on the [[Heidelberg µPG 501|Heidelberg µPG 501 tool page]]<br />
</div><br />
</div><br />
<br />
== Raith e-Line ==<br />
Bring a prepared design package for sessions 1 and 2, including alignment and overlay test patterns.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b8e2d5; border-left:6px solid #14866d; background:#f2fbf8; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* A design (gds, dxf, cif) for sessions 1 & 2 with:<br />
** 4 alignment crosses (find out what marks work on the tool from your sub-group).<br />
** Something to break the symmetry so you can tell chip orientation with your bare eye.<br />
** A pattern that you will use to test overlay (alignment between two lithography steps). A Vernier pattern is commonly used. Feel free to test your ideas.<br />
** Something creative, somethin fun :) This is an exercise in learning CAD as well.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
</div><br />
</div><br />
<br />
== JEOL 7800-F ==<br />
Prepare a real sample and imaging goals before booking JEOL 7800-F training.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b7e1c1; border-left:6px solid #2a9d5b; background:#f2fbf5; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Training takes about 2-3 sessions.<br />
* You need a chip/sample to be imaged before a session is booked. <br />
* Be familiar with the materials on the sample to be imaged and what feature is it that is of critical interest -- something that makes or breaks your device.<br />
* Request the training session only once you have gathered the chips and information. <br />
* What is your project alias? If unsure, contact your supervisor first.<br />
</div><br />
</div><br />
<br />
== JEOL 7800-F prime (QuanTech) ==<br />
Contact Zhe Liu to arrange access and training for JEOL 7800-F prime.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b7e1c1; border-left:6px solid #2a9d5b; background:#f2fbf5; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
* Please contact Zhe Liu ([mailto:zhe.liu@nbi.ku.dk zhe.liu@nbi.ku.dk])<br />
</div><br />
</div><br />
<br />
== AJA metallization, sputtering or ion milling ==<br />
Email your training request with shadowing, sample, tool, process, and recipe details for AJA.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #f0d4ac; border-left:6px solid #c77700; background:#fff8ef; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Which tool you want to use: AJA1 or AJA2?<br />
* What process do you want to run ?<br />
* Either the recipe name or specify the required process parameters.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video on how to load/unload and read the standard operating procedures on the [[AJA Systems|AJA Systems tool page]]<br />
</div><br />
</div><br />
<br />
== ALD 1 & 2 ==<br />
Email your ALD request with shadowing, sample, tool choice, and full process details.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #f0d4ac; border-left:6px solid #c77700; background:#fff8ef; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
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<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Which tool you want to use.<br />
* What process steps you want to run.<br />
** Either the recipe name or all required process parameters.<br />
** How long does the process take.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video(s) and read the standard operating procedure on the [[Cambridge ALD|ALD tool page]].<br />
</div><br />
</div><br />
<br />
<br />
== PLASSYS Evaporator ==<br />
Email your PLASSYS request with shadowing, sample, and process parameters.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #f0d4ac; border-left:6px solid #c77700; background:#fff8ef; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
<div class="mw-collapsible-toggle" style="text-align:right; margin:-0.62em 0 0.25em; line-height:1;">'''Expand'''</div><br />
<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Specify the required process parameters( material, thickness, tilt etc)<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
=== Training ===<br />
* You'll need 3 sessions to get trained on this tool.<br />
** Session 1 ( 1 hr.) - teaches you how to load/unload the sample and how to run a recipe. <br />
** Session 2 ( 2 hr.) - how to create your own recipe and run the process. <br />
** Session 3 ( 3 hr.) - sign off session <br />
</div><br />
</div><br />
<br />
== F&S autobonder ==<br />
Prepare shadowing and bonding documentation, then request F&S autobonder training.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #d9c8b7; border-left:6px solid #8b5e3c; background:#fbf6f1; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
<div class="mw-collapsible-toggle" style="text-align:right; margin:-0.62em 0 0.25em; line-height:1;">'''Expand'''</div><br />
<div class="mw-collapsible-content"><br />
Send an email with the following info before the training can be arranged:<br />
<br />
* Shadow colleagues using the tool 2-3 times. <br />
* You must have a '''chip''' for bonding.<br />
* You must know which '''daughterboard''' you will use for bonding.<br />
* You must know what material you use to '''mount''' the chip to the daughterboard (silver paint, PMMA or whatever is specific to your measurement).<br />
* You must prepare a '''bonding schematic''' and have one of your team members verify that it is correct.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
* Read through the wiki page: https://wiki.nbi.ku.dk/cleanroom/FS_bonder <br />
* Request a training session at this point.<br />
<br />
Two training sessions are required to get access to the bonder:<br />
<br />
# 3 hours: Basic bonder training and chip bonding<br />
# 2 hours: Sign-off session<br />
</div><br />
</div><br />
<br />
== Filmetrics reflectometer ==<br />
Contact Zhe Liu to arrange access and training for the Filmetrics reflectometer.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #b7e1c1; border-left:6px solid #2a9d5b; background:#f2fbf5; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
<div class="mw-collapsible-toggle" style="text-align:right; margin:-0.62em 0 0.25em; line-height:1;">'''Expand'''</div><br />
<div class="mw-collapsible-content"><br />
* Please contact Zhe Liu ([mailto:zhe.liu@nbi.ku.dk zhe.liu@nbi.ku.dk])<br />
</div><br />
</div><br />
<br />
== Micromanipulator ==<br />
Complete group-level training first, then request a micromanipulator sign-off session.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #d9c8b7; border-left:6px solid #8b5e3c; background:#fbf6f1; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
<div class="mw-collapsible-toggle" style="text-align:right; margin:-0.62em 0 0.25em; line-height:1;">'''Expand'''</div><br />
<div class="mw-collapsible-content"><br />
* Please get trained within your research group first. Then request a sign-off session.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
</div><br />
</div><br />
<br />
== Tool responsible ==<br />
General coordination is handled by cleanroom staff through the shared training contact.<br />
<div class="mw-collapsible mw-collapsed" style="border:1px solid #d8dde3; border-left:6px solid #72777d; background:#f8f9fa; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em 0.55em;"><br />
<div class="mw-collapsible-toggle" style="text-align:right; margin:-0.62em 0 0.25em; line-height:1;">'''Expand'''</div><br />
<div class="mw-collapsible-content"><br />
* For training coordination, use [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk].<br />
</div><br />
</div><br />
<br />
<br />
[[Category:Tools]]</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Training&diff=2757Training2026-04-10T11:16:41Z<p>Shiv: </p>
<hr />
<div>A prerequisite for using the cleanroom [[Tools|tools]] is that a [[About|cleanroom staff]] member has given the necessary instruction or training.<br />
This includes basic instruments such as hotplates and microscopes.<br />
For '''all''' training requests, please read the prerequisites below and afterwards contact [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk]. <br />
A cleanroom staff member will typically respond within one workday.<br />
Do not contact individual staff members for training. <br />
<br />
Once the user has completed the training, they are given booking rights in the [http://cleanroom.brickhost.com cleanroom booking system]. <br />
However, after a certain period of inactivity (typically 90 days) on a given tool, the booking rights will expire and the user will need to be retrained in order to continue using the tool.<br />
<br />
== Cleanroom general introduction ==<br />
Request cleanroom introduction training via [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk].<br />
<div class="mw-collapsible mw-collapsed" data-expandtext="Expand" data-collapsetext="" style="border:1px solid #d8dde3; border-left:6px solid #72777d; background:#f8f9fa; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em;"><br />
* Name a superuser from your group who will follow you in the cleanroom 2-3 times after your training.<br />
* Introduction training requires acceptance from both of you and typically runs from 9.30 to 15.00.<br />
* Before training, read the safety information: https://wiki.nbi.ku.dk/cleanroom/Safety<br />
* Typical schedule:<br />
** 9.15-10.30: Cleanroom introduction<br />
** Coffee break<br />
** 10.45-12.00: Asher, spinners, and optical microscopes<br />
** Lunch break<br />
** 13.00-14.00: Practical information inside and outside the lab<br />
** 14.00-15.00: Q&A and account setup<br />
</div><br />
<br />
== Bruker Dimension Icon Atomic Force Microscope (AFM) ==<br />
Have a sample ready and a clear characterization goal before requesting AFM training.<br />
<div class="mw-collapsible mw-collapsed" data-expandtext="Expand" data-collapsetext="" style="border:1px solid #c9ddf8; border-left:6px solid #3366cc; background:#f5f9ff; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em;"><br />
* Have a sample ready that you want to characterise. Think about what you want to learn about the sample; step heights, roughness, etc.<br />
* Only ask for training if you plan on using the tool regularly.<br />
* Training is usually 2-3 sessions of 1.5 hours.<br />
</div><br />
<br />
== Elionix 7000 (100 kV) ==<br />
Elionix 7000 training is for advanced users and requires prior cleanroom tool competency.<br />
<div class="mw-collapsible mw-collapsed" data-expandtext="Expand" data-collapsetext="" style="border:1px solid #b8e2d5; border-left:6px solid #14866d; background:#f2fbf8; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em;"><br />
=== Prerequisites ===<br />
* You must be at least a Master student or signed up for a long term (>6 months) project to be allowed to use the tool.<br />
* Elionix is a high level tool. Make sure you are already trained to:<br />
** Enter the cleanroom<br />
** Use the microscope, spinner, asher<br />
<br />
=== Training ===<br />
* You'll need 4 sessions to get trained on this tool.<br />
** Session 1 ( 1 hr.) - teaches you how to load/unload the sample and how to condition the beam.<br />
** Session 2 ( 3 hr.) - involves exposing alignment marks and test patterns (any design: preferably one half of the overlay ,so to understand alignment later ).<br />
** Session 3 ( 3 hr.) - involves using the exposed alignment marks for marker registration and exposing the 2nd pattern (i.e. the 2nd half of the overlay pattern).<br />
** Session 4 involves exposing a "real" pattern on a "real" chip on your own to gain access.<br />
<br />
=== Preparation ===<br />
Before any training slots are booked on the tool you'll need all of the following prepared:<br />
* Shadow senior users on the tool 2-3 times.<br />
* Chip (comfortable to handle) spin coated with resist. This chip will be used for sessions 1 & 2. Please be aware of the coating and baking parameters for the resist.<br />
* Any test design is preferred which has marks, overlay patterns that you will use to test alignment precision between two lithography steps. A Vernier pattern is commonly used. Feel free to test your ideas. Make sure you have something for both ''x'' and ''y'' directions.<br />
* Convert your design files into the Elionix exposure format .co7. This can be done using Beamer in 4th floor design computers.<br />
* Make sure all write fields are entirely in the positive coordinate space.<br />
* Make sure neither exposure will take longer than 15 minutes at 500 pA current and dose of 1000 uC/cm2.<br />
</div><br />
<br />
== Elionix F-125 (125 kV at QuanTech) ==<br />
Contact Zhe Liu to arrange access and training for Elionix F-125.<br />
<div class="mw-collapsible mw-collapsed" data-expandtext="Expand" data-collapsetext="" style="border:1px solid #b8e2d5; border-left:6px solid #14866d; background:#f2fbf8; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em;"><br />
* Please contact Zhe Liu ([mailto:zhe.liu@nbi.ku.dk zhe.liu@nbi.ku.dk])<br />
</div><br />
<br />
== Heidelberg upg501 ==<br />
Prepare your design file and coated chip before requesting Heidelberg upg501 training.<br />
<div class="mw-collapsible mw-collapsed" data-expandtext="Expand" data-collapsetext="" style="border:1px solid #b8e2d5; border-left:6px solid #14866d; background:#f2fbf8; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em;"><br />
* Have a design file ready. GDS, DXF or CIF format works fine. Make sure you are familiar with the design before your actual session.<br />
* Have a chip spin coated with an appropriate photoresist before the training session.<br />
** The photoresist is sensitive to white light. Use the yellow filter on the microscopes. The light source in the both scribers is white and will already expose your resist.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video and read the standard operating procedure on the [[Heidelberg µPG 501|Heidelberg µPG 501 tool page]]<br />
</div><br />
<br />
== Raith e-Line ==<br />
Bring a prepared design package for sessions 1 and 2, including alignment and overlay test patterns.<br />
<div class="mw-collapsible mw-collapsed" data-expandtext="Expand" data-collapsetext="" style="border:1px solid #b8e2d5; border-left:6px solid #14866d; background:#f2fbf8; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em;"><br />
* A design (gds, dxf, cif) for sessions 1 & 2 with:<br />
** 4 alignment crosses (find out what marks work on the tool from your sub-group).<br />
** Something to break the symmetry so you can tell chip orientation with your bare eye.<br />
** A pattern that you will use to test overlay (alignment between two lithography steps). A Vernier pattern is commonly used. Feel free to test your ideas.<br />
** Something creative, somethin fun :) This is an exercise in learning CAD as well.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
</div><br />
<br />
== JEOL 7800-F ==<br />
Prepare a real sample and imaging goals before booking JEOL 7800-F training.<br />
<div class="mw-collapsible mw-collapsed" data-expandtext="Expand" data-collapsetext="" style="border:1px solid #b7e1c1; border-left:6px solid #2a9d5b; background:#f2fbf5; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em;"><br />
* Training takes about 2-3 sessions.<br />
* You need a chip/sample to be imaged before a session is booked. <br />
* Be familiar with the materials on the sample to be imaged and what feature is it that is of critical interest -- something that makes or breaks your device.<br />
* Request the training session only once you have gathered the chips and information. <br />
* What is your project alias? If unsure, contact your supervisor first.<br />
</div><br />
<br />
== JEOL 7800-F prime (QuanTech) ==<br />
Contact Zhe Liu to arrange access and training for JEOL 7800-F prime.<br />
<div class="mw-collapsible mw-collapsed" data-expandtext="Expand" data-collapsetext="" style="border:1px solid #b7e1c1; border-left:6px solid #2a9d5b; background:#f2fbf5; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em;"><br />
* Please contact Zhe Liu ([mailto:zhe.liu@nbi.ku.dk zhe.liu@nbi.ku.dk])<br />
</div><br />
<br />
== AJA metallization, sputtering or ion milling ==<br />
Email your training request with shadowing, sample, tool, process, and recipe details for AJA.<br />
<div class="mw-collapsible mw-collapsed" data-expandtext="Expand" data-collapsetext="" style="border:1px solid #f0d4ac; border-left:6px solid #c77700; background:#fff8ef; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em;"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Which tool you want to use: AJA1 or AJA2?<br />
* What process do you want to run ?<br />
* Either the recipe name or specify the required process parameters.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video on how to load/unload and read the standard operating procedures on the [[AJA Systems|AJA Systems tool page]]<br />
</div><br />
<br />
== ALD 1 & 2 ==<br />
Email your ALD request with shadowing, sample, tool choice, and full process details.<br />
<div class="mw-collapsible mw-collapsed" data-expandtext="Expand" data-collapsetext="" style="border:1px solid #f0d4ac; border-left:6px solid #c77700; background:#fff8ef; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em;"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Which tool you want to use.<br />
* What process steps you want to run.<br />
** Either the recipe name or all required process parameters.<br />
** How long does the process take.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
<br />
Before the training session:<br />
* Watch the instruction video(s) and read the standard operating procedure on the [[Cambridge ALD|ALD tool page]].<br />
</div><br />
<br />
<br />
== PLASSYS Evaporator ==<br />
Email your PLASSYS request with shadowing, sample, and process parameters.<br />
<div class="mw-collapsible mw-collapsed" data-expandtext="Expand" data-collapsetext="" style="border:1px solid #f0d4ac; border-left:6px solid #c77700; background:#fff8ef; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em;"><br />
Send an email with the following info before the training can be arranged:<br />
* The name of the person you have shadowed and the number of times you've done it.<br />
* Confirm that you have a sample ready.<br />
* Specify the required process parameters( material, thickness, tilt etc)<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
=== Training ===<br />
* You'll need 3 sessions to get trained on this tool.<br />
** Session 1 ( 1 hr.) - teaches you how to load/unload the sample and how to run a recipe. <br />
** Session 2 ( 2 hr.) - how to create your own recipe and run the process. <br />
** Session 3 ( 3 hr.) - sign off session <br />
</div><br />
<br />
== F&S autobonder ==<br />
Prepare shadowing and bonding documentation, then request F&S autobonder training.<br />
<div class="mw-collapsible mw-collapsed" data-expandtext="Expand" data-collapsetext="" style="border:1px solid #d9c8b7; border-left:6px solid #8b5e3c; background:#fbf6f1; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em;"><br />
Send an email with the following info before the training can be arranged:<br />
<br />
* Shadow colleagues using the tool 2-3 times. <br />
* You must have a '''chip''' for bonding.<br />
* You must know which '''daughterboard''' you will use for bonding.<br />
* You must know what material you use to '''mount''' the chip to the daughterboard (silver paint, PMMA or whatever is specific to your measurement).<br />
* You must prepare a '''bonding schematic''' and have one of your team members verify that it is correct.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
* Read through the wiki page: https://wiki.nbi.ku.dk/cleanroom/FS_bonder <br />
* Request a training session at this point.<br />
<br />
Two training sessions are required to get access to the bonder:<br />
<br />
# 3 hours: Basic bonder training and chip bonding<br />
# 2 hours: Sign-off session<br />
</div><br />
<br />
== Filmetrics reflectometer ==<br />
Contact Zhe Liu to arrange access and training for the Filmetrics reflectometer.<br />
<div class="mw-collapsible mw-collapsed" data-expandtext="Expand" data-collapsetext="" style="border:1px solid #b7e1c1; border-left:6px solid #2a9d5b; background:#f2fbf5; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em;"><br />
* Please contact Zhe Liu ([mailto:zhe.liu@nbi.ku.dk zhe.liu@nbi.ku.dk])<br />
</div><br />
<br />
== Micromanipulator ==<br />
Complete group-level training first, then request a micromanipulator sign-off session.<br />
<div class="mw-collapsible mw-collapsed" data-expandtext="Expand" data-collapsetext="" style="border:1px solid #d9c8b7; border-left:6px solid #8b5e3c; background:#fbf6f1; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em;"><br />
* Please get trained within your research group first. Then request a sign-off session.<br />
* What is your project alias? If unsure, contact your supervisor first.<br />
</div><br />
<br />
== Tool responsible ==<br />
General coordination is handled by cleanroom staff through the shared training contact.<br />
<div class="mw-collapsible mw-collapsed" data-expandtext="Expand" data-collapsetext="" style="border:1px solid #d8dde3; border-left:6px solid #72777d; background:#f8f9fa; border-radius:6px; margin:0.45em 0 1.0em; padding:0.55em 0.75em;"><br />
* For training coordination, use [mailto:cleanroom@nbi.ku.dk cleanroom@nbi.ku.dk].<br />
</div><br />
<br />
<br />
[[Category:Tools]]</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Training&diff=1575Training2019-01-14T10:32:17Z<p>Shiv: </p>
<hr />
<div>Getting trained on tool. Expand the relevant tool section below:<br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Elionix 7000 (100 kV)<br />
<div class="mw-collapsible-content"><br />
* You must be at least a Master student or signed up for a long term (>6 months) project to be allowed to use a tool.<br />
* Elionix is a high level tool: Make sure you are already trained to:<br />
** enter the cleanroom<br />
** use the microscope, spinner, asher<br />
** any other tool you'll need to prepare chips for the training. This could be the micromanipulator or the Heidelberg.<br />
* You'll need 3 sessions of about 2.5 hrs each on the tool to get trained on this tool.<br />
** Session 1 involves exposing alignment marks and one half of the overlay test pattern on a blank chip. After exposure you need to develop the pattern in the PMMA developer. This is enough for session 2.<br />
** Session 2 involves using the exposed alignment marks for marker registration and exposing the 2nd pattern (e.g., 2nd half of the overlay pattern).<br />
** Session 3 involves exposing a "real" pattern on a "real" chip.<br />
* Before any training slots are booked on the tool you'll need all of the following prepared:<br />
** Shadow someone on the tool 2-3 times before starting the prep.<br />
** Si chip (5-10 mm square) spin coated with A2 and baked at 185C/2mins. This chip will be used for sessions 1 & 2. This has to be a dummy chip.<br />
** A chip for your 3rd session. This is a "real" chip. Plan this internally within your sub group.<br />
** A design (gds, dxf, cif) for sessions 1 & 2 with:<br />
*** 4 alignment crosses (find out what marks work on the tool from your sub-group).<br />
*** Something to break the symmetry so you can tell chip orientation with your bare eye<br />
*** A pattern that you will use to test overlay (alignment between two lithography steps). A Vernier pattern is commonly used. Feel free to test your ideas.<br />
*** Something creative, somethin fun :) This is an exercise in learning CAD as well.<br />
** A design for the "real" chip to be exposed in session 3.<br />
* You'll also need a software session of about 0.5 hrs - arrange this with an Elionix superuser within your group.<br />
* Then follow workflow 3 at [https://wiki.nbi.ku.dk/qdevwiki/ElionixCheatSheet Qdev wiki] to convert your design files into the Elionix exposure format *co7. Make dedicated folders for each exposure.<br />
* Note: Do not use Beamer to prep the Elionix con files<br />
</div><br />
</div><br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Elionix F-125 (125 kV)<br />
<div class="mw-collapsible-content"><br />
Please contact Zhe Liu (zhe.liu [a] nbi ku dk)<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Heidelberg upg501<br />
<div class="mw-collapsible-content"><br />
* Have a design file ready. GDS, DXF or CIF format works fine. Make sure you are familiar with the design before your actual session.<br />
* Have a chip spin coated with an appropriate photoresist before the training session.<br />
** The photoresist is sensitive to white light. Use the yellow filter on the microscopes. The light source in the both scribers is white and will already "expose" your resist.<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Raith e-Line<br />
<div class="mw-collapsible-content"><br />
* A design (gds, dxf, cif) for sessions 1 & 2 with:<br />
** 4 alignment crosses (find out what marks work on the tool from your sub-group).<br />
** Something to break the symmetry so you can tell chip orientation with your bare eye<br />
** A pattern that you will use to test overlay (alignment between two lithography steps). A Vernier pattern is commonly used. Feel free to test your ideas.<br />
** Something creative, somethin fun :) This is an exercise in learning CAD as well.<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
JEOL 7800-F<br />
<div class="mw-collapsible-content"><br />
* Training takes about 2-3 session<br />
* You need a chip/sample to be imaged before a session is booked. <br />
* Be familiar with the materials on the sample to be imaged and what feature is it that is of critical interest - something that makes or breaks your device.<br />
* Request the training session only once you have gathered the chips and information. <br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
AJA metallization, sputtering or ion milling<br />
<div class="mw-collapsible-content"><br />
* You must have a sample ready before the training is arranged.<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
ALD 1 & 2<br />
<div class="mw-collapsible-content"><br />
* You must have a sample ready before the training is arranged.<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
F&S autobonder<br />
<div class="mw-collapsible-content"><br />
* You must have a chip for bonding<br />
* Figure out which daughterboard is it that your team/fridge needs.<br />
* Have a team member show your how to glue the chip to the daughterboard with silver paint, pmma or whatever is specific to your measurement.<br />
* Request to a training session at this point.<br />
</div><br />
</div></div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Training&diff=1574Training2018-11-12T10:06:51Z<p>Shiv: </p>
<hr />
<div>Getting trained on tool. Expand the relevant tool section below:<br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Elionix 7000 (100 kV)<br />
<div class="mw-collapsible-content"><br />
* You must be at least a Master student or signed up for a long term (>6 months) project to be allowed to use a tool.<br />
* Elionix is a high level tool: Make sure you are already trained to:<br />
** enter the cleanroom<br />
** use the microscope, spinner, asher<br />
** any other tool you'll need to prepare chips for the training. This could be the micromanipulator or the Heidelberg.<br />
* You'll need 3 sessions of about 2.5 hrs each on the tool to get trained on this tool.<br />
** Session 1 involves exposing alignment marks and one half of the overlay test pattern on a blank chip. After exposure you need to develop the pattern in the PMMA developer. This is enough for session 2.<br />
** Session 2 involves using the exposed alignment marks for marker registration and exposing the 2nd pattern (e.g., 2nd half of the overlay pattern).<br />
** Session 3 involves exposing a "real" pattern on a "real" chip.<br />
* Before any training slots are booked on the tool you'll need all of the following prepared:<br />
** Si chip (5-10 mm square) spin coated with A2 and baked at 185C/2mins. This chip will be used for sessions 1 & 2. This has to be a dummy chip.<br />
** A chip for your 3rd session. This is a "real" chip. Plan this internally within your sub group.<br />
** A design (gds, dxf, cif) for sessions 1 & 2 with:<br />
*** 4 alignment crosses (find out what marks work on the tool from your sub-group).<br />
*** Something to break the symmetry so you can tell chip orientation with your bare eye<br />
*** A pattern that you will use to test overlay (alignment between two lithography steps). A Vernier pattern is commonly used. Feel free to test your ideas.<br />
*** Something creative, somethin fun :) This is an exercise in learning CAD as well.<br />
** A design for the "real" chip to be exposed in session 3.<br />
* You'll also need a software session of about 0.5 hrs - arrange this with an Elionix superuser within your group.<br />
* Then follow workflow 3 at [https://wiki.nbi.ku.dk/qdevwiki/ElionixCheatSheet Qdev wiki] to convert your design files into the Elionix exposure format *co7. Make dedicated folders for each exposure.<br />
* Note: Do not use Beamer to prep the Elionix con files<br />
</div><br />
</div><br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Elionix F-125 (125 kV)<br />
<div class="mw-collapsible-content"><br />
Please contact Zhe Liu (zhe.liu [a] nbi ku dk)<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Heidelberg upg501<br />
<div class="mw-collapsible-content"><br />
* Have a design file ready. GDS, DXF or CIF format works fine. Make sure you are familiar with the design before your actual session.<br />
* Have a chip spin coated with an appropriate photoresist before the training session.<br />
** The photoresist is sensitive to white light. Use the yellow filter on the microscopes. The light source in the both scribers is white and will already "expose" your resist.<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Raith e-Line<br />
<div class="mw-collapsible-content"><br />
* A design (gds, dxf, cif) for sessions 1 & 2 with:<br />
** 4 alignment crosses (find out what marks work on the tool from your sub-group).<br />
** Something to break the symmetry so you can tell chip orientation with your bare eye<br />
** A pattern that you will use to test overlay (alignment between two lithography steps). A Vernier pattern is commonly used. Feel free to test your ideas.<br />
** Something creative, somethin fun :) This is an exercise in learning CAD as well.<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
JEOL 7800-F<br />
<div class="mw-collapsible-content"><br />
* Training takes about 2-3 session<br />
* You need a chip/sample to be imaged before a session is booked. <br />
* Be familiar with the materials on the sample to be imaged and what feature is it that is of critical interest - something that makes or breaks your device.<br />
* Request the training session only once you have gathered the chips and information. <br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
AJA metallization, sputtering or ion milling<br />
<div class="mw-collapsible-content"><br />
* You must have a sample ready before the training is arranged.<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
ALD 1 & 2<br />
<div class="mw-collapsible-content"><br />
* You must have a sample ready before the training is arranged.<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
F&S autobonder<br />
<div class="mw-collapsible-content"><br />
* You must have a chip for bonding<br />
* Figure out which daughterboard is it that your team/fridge needs.<br />
* Have a team member show your how to glue the chip to the daughterboard with silver paint, pmma or whatever is specific to your measurement.<br />
* Request to a training session at this point.<br />
</div><br />
</div></div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Training&diff=1573Training2018-11-05T10:28:26Z<p>Shiv: </p>
<hr />
<div>Getting trained on tool. Expand the relevant tool section below:<br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Elionix 7000 (100 kV)<br />
<div class="mw-collapsible-content"><br />
* You must be at least a Master student or signed up for a long term (>6 months) project to be allowed to use a tool.<br />
* Elionix is a high level tool: Make sure you are already trained to:<br />
** enter the cleanroom<br />
** use the microscope, spinner, asher<br />
** any other tool you'll need to prepare chips for the training. This could be the micromanipulator or the Heidelberg.<br />
* You'll need 3 sessions of about 2.5 hrs each on the tool to get trained on this tool.<br />
** Session 1 involves exposing alignment marks and one half of the overlay test pattern on a blank chip. After exposure you need to develop the pattern in the PMMA developer. This is enough for session 2.<br />
** Session 2 involves using the exposed alignment marks for marker registration and exposing the 2nd pattern (e.g., 2nd half of the overlay pattern).<br />
** Session 3 involves exposing a "real" pattern on a "real" chip.<br />
* Before any training slots are booked on the tool you'll need all of the following prepared:<br />
** Si chip (5-10 mm square) spin coated with A2 and baked at 185C/2mins. This chip will be used for sessions 1 & 2. This has to be a dummy chip.<br />
** A chip for your 3rd session. This is a "real" chip. Plan this internally within your sub group.<br />
** A design (gds, dxf, cif) for sessions 1 & 2 with:<br />
*** 4 alignment crosses (find out what marks work on the tool from your sub-group).<br />
*** Something to break the symmetry so you can tell chip orientation with your bare eye<br />
*** A pattern that you will use to test overlay (alignment between two lithography steps). A Vernier pattern is commonly used. Feel free to test your ideas.<br />
*** Something creative, somethin fun :) This is an exercise in learning CAD as well.<br />
** A design for the "real" chip to be exposed in session 3.<br />
* You'll also need a software session of about 0.5 hrs - arrange this with an Elionix superuser within your group.<br />
* Then follow workflow 3 at [https://wiki.nbi.ku.dk/qdevwiki/ElionixCheatSheet Qdev wiki] to convert your design files into the Elionix exposure format *co7. Make dedicated folders for each exposure.<br />
* Note: Do not use Beamer to prep the Elionix con files<br />
</div><br />
</div><br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Elionix F-125 (125 kV)<br />
<div class="mw-collapsible-content"><br />
Please contact Zhe Liu (zhe.liu [a] nbi ku dk)<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Heidelberg upg501<br />
<div class="mw-collapsible-content"><br />
* Have a design file ready. GDS, DXF or CIF format works fine. Make sure you are familiar with the design before your actual session.<br />
* Have a chip spin coated with an appropriate photoresist before the training session.<br />
** The photoresist is sensitive to white light. Use the yellow filter on the microscopes. The light source in the both scribers is white and will already "expose" your resist.<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Raith e-Line<br />
<div class="mw-collapsible-content"><br />
* A design (gds, dxf, cif) for sessions 1 & 2 with:<br />
** 4 alignment crosses (find out what marks work on the tool from your sub-group).<br />
** Something to break the symmetry so you can tell chip orientation with your bare eye<br />
** A pattern that you will use to test overlay (alignment between two lithography steps). A Vernier pattern is commonly used. Feel free to test your ideas.<br />
** Something creative, somethin fun :) This is an exercise in learning CAD as well.<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
AJA metallization, sputtering or ion milling<br />
<div class="mw-collapsible-content"><br />
* You must have a sample ready before the training is arranged.<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
ALD 1 & 2<br />
<div class="mw-collapsible-content"><br />
* You must have a sample ready before the training is arranged.<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
F&S autobonder<br />
<div class="mw-collapsible-content"><br />
* You must have a chip for bonding<br />
* Figure out which daughterboard is it that your team/fridge needs.<br />
* Have a team member show your how to glue the chip to the daughterboard with silver paint, pmma or whatever is specific to your measurement.<br />
* Request to a training session at this point.<br />
</div><br />
</div></div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Training&diff=1572Training2018-11-05T10:27:45Z<p>Shiv: </p>
<hr />
<div>Getting trained on tool. Expand the relevant tool section below:<br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Elionix 7000 (100 kV)<br />
<div class="mw-collapsible-content"><br />
* You must be at least a Master student or signed up for a long term (>6 months) project to be allowed to use a tool.<br />
* Elionix is a high level tool: Make sure you are already trained to:<br />
** enter the cleanroom<br />
** use the microscope, spinner, asher<br />
** any other tool you'll need to prepare chips for the training. This could be the micromanipulator or the Heidelberg.<br />
* You'll need 3 sessions of about 2.5 hrs each on the tool to get trained on this tool.<br />
** Session 1 involves exposing alignment marks and one half of the overlay test pattern on a blank chip. After exposure you need to develop the pattern in the PMMA developer. This is enough for session 2.<br />
** Session 2 involves using the exposed alignment marks for marker registration and exposing the 2nd pattern (e.g., 2nd half of the overlay pattern).<br />
** Session 3 involves exposing a "real" pattern on a "real" chip.<br />
* Before any training slots are booked on the tool you'll need all of the following prepared:<br />
** Si chip (5-10 mm square) spin coated with A2 and baked at 185C/2mins. This chip will be used for sessions 1 & 2. This has to be a dummy chip.<br />
** A chip for your 3rd session. This is a "real" chip. Plan this internally within your sub group.<br />
** A design (gds, dxf, cif) for sessions 1 & 2 with:<br />
*** 4 alignment crosses (find out what marks work on the tool from your sub-group).<br />
*** Something to break the symmetry so you can tell chip orientation with your bare eye<br />
*** A pattern that you will use to test overlay (alignment between two lithography steps). A Vernier pattern is commonly used. Feel free to test your ideas.<br />
*** Something creative, somethin fun :) This is an exercise in learning CAD as well.<br />
** A design for the "real" chip to be exposed in session 3.<br />
* You'll also need a software session of about 0.5 hrs - arrange this with an Elionix superuser within your group.<br />
* Then follow workflow 3 at [https://wiki.nbi.ku.dk/qdevwiki/ElionixCheatSheet Qdev wiki] to convert your design files into the Elionix exposure format *co7. Make dedicated folders for each exposure.<br />
* Note: Do not use Beamer to prep the Elionix con files<br />
</div><br />
</div><br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Elionix F-125 (125 kV)<br />
<div class="mw-collapsible-content"><br />
Please contact Zhe Liu (zhe.liu [a] nbi ku dk)<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Heidelberg upg501<br />
<div class="mw-collapsible-content"><br />
* Have a design file ready. GDS, DXF or CIF format works fine. Make sure you are familiar with the design before your actual session.<br />
* Have a chip spin coated with an appropriate photoresist before the training session.<br />
** The photoresist is sensitive to white light. Use the yellow filter on the microscopes. The light source in the both scribers is white and will already "expose" your resist.<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Raith e-Line<br />
<div class="mw-collapsible-content"><br />
* A design (gds, dxf, cif) for sessions 1 & 2 with:<br />
** 4 alignment crosses (find out what marks work on the tool from your sub-group).<br />
** Something to break the symmetry so you can tell chip orientation with your bare eye<br />
** A pattern that you will use to test overlay (alignment between two lithography steps). A Vernier pattern is commonly used. Feel free to test your ideas.<br />
** Something creative, somethin fun :) This is an exercise in learning CAD as well.<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
AJA metallization, sputtering or ion milling<br />
<div class="mw-collapsible-content"><br />
* You must have a sample ready before the training is arranged.<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
ALD 1 & 2<br />
<div class="mw-collapsible-content"><br />
* You must have a sample ready before the training is arranged.<br />
</div><br />
</div><br />
<br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
F&S autobonder<br />
<div class="mw-collapsible-content"><br />
* You must have a sample for bonding ready before the training is arranged.<br />
* Figure out which daughterboard is it that your team/fridge needs.<br />
* Have a team member show your how to glue the chip to the daughterboard with silver paint, pmma or whatever is specific to your measurement.<br />
* Request to a training session at this point.<br />
</div><br />
</div></div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Elionix_7000&diff=1571Elionix 70002018-10-01T15:16:02Z<p>Shiv: </p>
<hr />
<div>{{Infobox tool<br />
|image = Tool Elionix.jpg<br />
|toolfullname = Elionix EBL system<br />
|website = http://www.elionix.co.jp/english/<br />
|company = ELIONIX INC. <br />
|description = Electron beam lithography system<br />
|location = 03.2.TBD<br />
|primary = Shiv<br />
|secondary = -<br />
|limits = TBD<br />
|computer = TBD<br />
|manual = TBD<br />
}}<br />
<br />
= Booking rules (last update: 11th Nov, 2014) =<br />
*Between the hours of 9 am and 6 pm weekdays, every user is allotted a bank of 3 hours of bookable time.<br />
*You may distribute these 3 hours across several slots - three 1 hour slots or two 1.5 hour slots, etc<br />
*You may book only 3 hours on the system at a time (See the after hours exception)<br />
*This rolling bank system also means that once you use, say 1 hour of your allotted 3 hours, you can make a new 1 hour booking sometime later.<br />
*After hours exception: 9am-6pm weekdays are the normal hours and reservation outside these hours (after hours) are not governed strictly. However, if I see unfair usage of the tool in this period, I will intervene.<br />
<del>Only one booking allowed at a time between 9am-6pm on weekdays, no regulations outside of these hours. Last updated: 15 Apr 2014.</del><br />
<br />
= Manuals and Guides =<br />
== Local Qdev versions - cheat sheet & detailed guide == <br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
* [https://wiki.nbi.ku.dk/qdevwiki/ElionixCheatSheet Cheat sheet]<br />
<div class="mw-collapsible-content"><br />
* [[Media:ElionixQDevManual.pdf|QDev Elionix manual]] &mdash; written before the upgrade (linux->windows GUI), last updated 2013-03-05. Source repository [http://qdev-data.fys.ku.dk/git/repositories/view/guides/elionix-guide/ here], upload new pdf versions to [[File:ElionixQDevManual.pdf]].<br />
* [[Media:Elionix_Manual_v2.pdf|Manual from Jimmy and Hugh]] &mdash; pertains to Harvard system, last updated 4/9/09.<br />
<br />
= Design PC =<br />
This is the PC in the Elionix room in the basement, next to the two racks with elionix hardware. You may use this PC to ready your design, convert to *.cell & *.con formats. The desktop has all the shortcuts to network folders (Design computers on the 4th floor, shared images from SEM PC and user folder from Exposure PC) and relevant software. Any files outsides the designated user folders (shortcut on desktop) can be deleted without warning.<br />
<br />
The PC is labeled ''Elionix''.</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Elionix_7000&diff=1570Elionix 70002018-10-01T15:15:30Z<p>Shiv: </p>
<hr />
<div>{{Infobox tool<br />
|image = Tool Elionix.jpg<br />
|toolfullname = Elionix EBL system<br />
|website = http://www.elionix.co.jp/english/<br />
|company = ELIONIX INC. <br />
|description = Electron beam lithography system<br />
|location = 03.2.TBD<br />
|primary = Shiv<br />
|secondary = -<br />
|limits = TBD<br />
|computer = TBD<br />
|manual = TBD<br />
}}<br />
<br />
= Booking rules (last update: 11th Nov, 2014) =<br />
*Between the hours of 9 am and 6 pm weekdays, every user is allotted a bank of 3 hours of bookable time.<br />
*You may distribute these 3 hours across several slots - three 1 hour slots or two 1.5 hour slots, etc<br />
*You may book only 3 hours on the system at a time (See the after hours exception)<br />
*This rolling bank system also means that once you use, say 1 hour of your allotted 3 hours, you can make a new 1 hour booking sometime later.<br />
*After hours exception: 9am-6pm weekdays are the normal hours and reservation outside these hours (after hours) are not governed strictly. However, if I see unfair usage of the tool in this period, I will intervene.<br />
<del>Only one booking allowed at a time between 9am-6pm on weekdays, no regulations outside of these hours. Last updated: 15 Apr 2014.</del><br />
<br />
= Manuals and Guides =<br />
== Local Qdev versions - cheat sheet & detailed guide == <br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
* [https://wiki.nbi.ku.dk/qdevwiki/ElionixCheatSheet Cheat sheet]<br />
<div class="mw-collapsible-content"><br />
* [[Media:ElionixQDevManual.pdf|QDev Elionix manual]] &mdash; written before the upgrade (linux->windows GUI), last updated 2013-03-05. Source repository [http://qdev-data.fys.ku.dk/git/repositories/view/guides/elionix-guide/ here], upload new pdf versions to [[File:ElionixQDevManual.pdf]].<br />
* [[Media:Elionix_Manual_v2.pdf|Manual from Jimmy and Hugh]] &mdash; pertains to Harvard system, last updated 4/9/09.<br />
<br />
= Design PC =<br />
This is the PC in the Elionix room in the basement, next to the two racks with elionix hardware. You may use this PC to ready your design, convert to *.cell & *.con formats. The desktop has all the shortcuts to network folders (Design computers on the 4th floor, shared images from SEM PC and user folder from Exposure PC) and relevant software. Any files outsides the designated user folders (shortcut on desktop) can be deleted without warning. The login credentials are:<br />
: Username: ''Nanouser''<br />
: Password: <br />
<br />
The PC is labeled ''Elionix''.</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Elionix_7000&diff=1569Elionix 70002018-10-01T15:15:02Z<p>Shiv: /* Official */</p>
<hr />
<div>{{Infobox tool<br />
|image = Tool Elionix.jpg<br />
|toolfullname = Elionix EBL system<br />
|website = http://www.elionix.co.jp/english/<br />
|company = ELIONIX INC. <br />
|description = Electron beam lithography system<br />
|location = 03.2.TBD<br />
|primary = Shiv<br />
|secondary = Pétur<br />
|limits = TBD<br />
|computer = TBD<br />
|manual = TBD<br />
}}<br />
<br />
= Booking rules (last update: 11th Nov, 2014) =<br />
*Between the hours of 9 am and 6 pm weekdays, every user is allotted a bank of 3 hours of bookable time.<br />
*You may distribute these 3 hours across several slots - three 1 hour slots or two 1.5 hour slots, etc<br />
*You may book only 3 hours on the system at a time (See the after hours exception)<br />
*This rolling bank system also means that once you use, say 1 hour of your allotted 3 hours, you can make a new 1 hour booking sometime later.<br />
*After hours exception: 9am-6pm weekdays are the normal hours and reservation outside these hours (after hours) are not governed strictly. However, if I see unfair usage of the tool in this period, I will intervene.<br />
<del>Only one booking allowed at a time between 9am-6pm on weekdays, no regulations outside of these hours. Last updated: 15 Apr 2014.</del><br />
<br />
= Manuals and Guides =<br />
== Local Qdev versions - cheat sheet & detailed guide == <br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
* [https://wiki.nbi.ku.dk/qdevwiki/ElionixCheatSheet Cheat sheet]<br />
<div class="mw-collapsible-content"><br />
* [[Media:ElionixQDevManual.pdf|QDev Elionix manual]] &mdash; written before the upgrade (linux->windows GUI), last updated 2013-03-05. Source repository [http://qdev-data.fys.ku.dk/git/repositories/view/guides/elionix-guide/ here], upload new pdf versions to [[File:ElionixQDevManual.pdf]].<br />
* [[Media:Elionix_Manual_v2.pdf|Manual from Jimmy and Hugh]] &mdash; pertains to Harvard system, last updated 4/9/09.<br />
<br />
= Design PC =<br />
This is the PC in the Elionix room in the basement, next to the two racks with elionix hardware. You may use this PC to ready your design, convert to *.cell & *.con formats. The desktop has all the shortcuts to network folders (Design computers on the 4th floor, shared images from SEM PC and user folder from Exposure PC) and relevant software. Any files outsides the designated user folders (shortcut on desktop) can be deleted without warning. The login credentials are:<br />
: Username: ''Nanouser''<br />
: Password: <br />
<br />
The PC is labeled ''Elionix''.</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Elionix_7000&diff=1568Elionix 70002018-10-01T15:14:28Z<p>Shiv: /* Local Qdev versions - cheat sheet & detailed guide */</p>
<hr />
<div>{{Infobox tool<br />
|image = Tool Elionix.jpg<br />
|toolfullname = Elionix EBL system<br />
|website = http://www.elionix.co.jp/english/<br />
|company = ELIONIX INC. <br />
|description = Electron beam lithography system<br />
|location = 03.2.TBD<br />
|primary = Shiv<br />
|secondary = Pétur<br />
|limits = TBD<br />
|computer = TBD<br />
|manual = TBD<br />
}}<br />
<br />
= Booking rules (last update: 11th Nov, 2014) =<br />
*Between the hours of 9 am and 6 pm weekdays, every user is allotted a bank of 3 hours of bookable time.<br />
*You may distribute these 3 hours across several slots - three 1 hour slots or two 1.5 hour slots, etc<br />
*You may book only 3 hours on the system at a time (See the after hours exception)<br />
*This rolling bank system also means that once you use, say 1 hour of your allotted 3 hours, you can make a new 1 hour booking sometime later.<br />
*After hours exception: 9am-6pm weekdays are the normal hours and reservation outside these hours (after hours) are not governed strictly. However, if I see unfair usage of the tool in this period, I will intervene.<br />
<del>Only one booking allowed at a time between 9am-6pm on weekdays, no regulations outside of these hours. Last updated: 15 Apr 2014.</del><br />
<br />
= Manuals and Guides =<br />
== Local Qdev versions - cheat sheet & detailed guide == <br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
* [https://wiki.nbi.ku.dk/qdevwiki/ElionixCheatSheet Cheat sheet]<br />
<div class="mw-collapsible-content"><br />
* [[Media:ElionixQDevManual.pdf|QDev Elionix manual]] &mdash; written before the upgrade (linux->windows GUI), last updated 2013-03-05. Source repository [http://qdev-data.fys.ku.dk/git/repositories/view/guides/elionix-guide/ here], upload new pdf versions to [[File:ElionixQDevManual.pdf]].<br />
* [[Media:Elionix_Manual_v2.pdf|Manual from Jimmy and Hugh]] &mdash; pertains to Harvard system, last updated 4/9/09.<br />
<br />
=== Official ===<br />
<br />
* After upgrade:<br />
** [[Media:ElionixOverlayExposure.pdf|Overlay Exposures (Quick Reference)]] &mdash; by Taichi when he was in DK.<br />
** [[Media:ElionixGUITraining.pdf|Lose Ends from Training Session]] &mdash; by Taichi when he was in DK.<br />
<br />
* Before upgrade<br />
**[[Media:ElionixManualFull.pdf|Elionix 7000 User Manual (Full)]]<br />
**[[Media:ElionixFieldCorrectionTips.pdf|Field correction tips]] &mdash; by Taichi when he was in DK.<br />
**[[Media:ElionixTrainingSummary.pdf|Training summary]] &mdash; by Taichi when he was in DK.<br />
**[[Media:ElionixApertureAdjust.pdf|Aperture initialization and adjustment]] &mdash; by Taichi when he was in DK.<br />
**[[Media:ElionixStopStartManual.pdf|System shutdown and start-up manual]] &mdash; by Taichi when he was in DK.<br />
<br />
</div><br />
</div><br />
<br />
= Design PC =<br />
This is the PC in the Elionix room in the basement, next to the two racks with elionix hardware. You may use this PC to ready your design, convert to *.cell & *.con formats. The desktop has all the shortcuts to network folders (Design computers on the 4th floor, shared images from SEM PC and user folder from Exposure PC) and relevant software. Any files outsides the designated user folders (shortcut on desktop) can be deleted without warning. The login credentials are:<br />
: Username: ''Nanouser''<br />
: Password: <br />
<br />
The PC is labeled ''Elionix''.</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Elionix_7000&diff=1567Elionix 70002018-10-01T15:14:07Z<p>Shiv: /* Elionix update log: */</p>
<hr />
<div>{{Infobox tool<br />
|image = Tool Elionix.jpg<br />
|toolfullname = Elionix EBL system<br />
|website = http://www.elionix.co.jp/english/<br />
|company = ELIONIX INC. <br />
|description = Electron beam lithography system<br />
|location = 03.2.TBD<br />
|primary = Shiv<br />
|secondary = Pétur<br />
|limits = TBD<br />
|computer = TBD<br />
|manual = TBD<br />
}}<br />
<br />
= Booking rules (last update: 11th Nov, 2014) =<br />
*Between the hours of 9 am and 6 pm weekdays, every user is allotted a bank of 3 hours of bookable time.<br />
*You may distribute these 3 hours across several slots - three 1 hour slots or two 1.5 hour slots, etc<br />
*You may book only 3 hours on the system at a time (See the after hours exception)<br />
*This rolling bank system also means that once you use, say 1 hour of your allotted 3 hours, you can make a new 1 hour booking sometime later.<br />
*After hours exception: 9am-6pm weekdays are the normal hours and reservation outside these hours (after hours) are not governed strictly. However, if I see unfair usage of the tool in this period, I will intervene.<br />
<del>Only one booking allowed at a time between 9am-6pm on weekdays, no regulations outside of these hours. Last updated: 15 Apr 2014.</del><br />
<br />
= Manuals and Guides =<br />
== Local Qdev versions - cheat sheet & detailed guide == <br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
* [https://wiki.nbi.ku.dk/qdevwiki/ElionixCheatSheet Cheat sheet (based on text by Henri)]<br />
<div class="mw-collapsible-content"><br />
* [[Media:ElionixQDevManual.pdf|QDev Elionix manual]] &mdash; written before the upgrade (linux->windows GUI), last updated 2013-03-05. Source repository [http://qdev-data.fys.ku.dk/git/repositories/view/guides/elionix-guide/ here], upload new pdf versions to [[File:ElionixQDevManual.pdf]].<br />
* [[Media:Elionix_Manual_v2.pdf|Manual from Jimmy and Hugh]] &mdash; pertains to Harvard system, last updated 4/9/09.<br />
<br />
=== Official ===<br />
<br />
* After upgrade:<br />
** [[Media:ElionixOverlayExposure.pdf|Overlay Exposures (Quick Reference)]] &mdash; by Taichi when he was in DK.<br />
** [[Media:ElionixGUITraining.pdf|Lose Ends from Training Session]] &mdash; by Taichi when he was in DK.<br />
<br />
* Before upgrade<br />
**[[Media:ElionixManualFull.pdf|Elionix 7000 User Manual (Full)]]<br />
**[[Media:ElionixFieldCorrectionTips.pdf|Field correction tips]] &mdash; by Taichi when he was in DK.<br />
**[[Media:ElionixTrainingSummary.pdf|Training summary]] &mdash; by Taichi when he was in DK.<br />
**[[Media:ElionixApertureAdjust.pdf|Aperture initialization and adjustment]] &mdash; by Taichi when he was in DK.<br />
**[[Media:ElionixStopStartManual.pdf|System shutdown and start-up manual]] &mdash; by Taichi when he was in DK.<br />
<br />
</div><br />
</div><br />
<br />
= Design PC =<br />
This is the PC in the Elionix room in the basement, next to the two racks with elionix hardware. You may use this PC to ready your design, convert to *.cell & *.con formats. The desktop has all the shortcuts to network folders (Design computers on the 4th floor, shared images from SEM PC and user folder from Exposure PC) and relevant software. Any files outsides the designated user folders (shortcut on desktop) can be deleted without warning. The login credentials are:<br />
: Username: ''Nanouser''<br />
: Password: <br />
<br />
The PC is labeled ''Elionix''.</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Elionix_7000&diff=1566Elionix 70002018-10-01T15:13:56Z<p>Shiv: /* Contact */</p>
<hr />
<div>{{Infobox tool<br />
|image = Tool Elionix.jpg<br />
|toolfullname = Elionix EBL system<br />
|website = http://www.elionix.co.jp/english/<br />
|company = ELIONIX INC. <br />
|description = Electron beam lithography system<br />
|location = 03.2.TBD<br />
|primary = Shiv<br />
|secondary = Pétur<br />
|limits = TBD<br />
|computer = TBD<br />
|manual = TBD<br />
}}<br />
<br />
= Booking rules (last update: 11th Nov, 2014) =<br />
*Between the hours of 9 am and 6 pm weekdays, every user is allotted a bank of 3 hours of bookable time.<br />
*You may distribute these 3 hours across several slots - three 1 hour slots or two 1.5 hour slots, etc<br />
*You may book only 3 hours on the system at a time (See the after hours exception)<br />
*This rolling bank system also means that once you use, say 1 hour of your allotted 3 hours, you can make a new 1 hour booking sometime later.<br />
*After hours exception: 9am-6pm weekdays are the normal hours and reservation outside these hours (after hours) are not governed strictly. However, if I see unfair usage of the tool in this period, I will intervene.<br />
<del>Only one booking allowed at a time between 9am-6pm on weekdays, no regulations outside of these hours. Last updated: 15 Apr 2014.</del><br />
<br />
= Elionix update log: =<br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
'''4th June, 2014''': Semi-annual maintenance visit - new aperture set. User defined beam conditions are far from optimum. The engineer has reconditioned the ones stored under the '''Default''' user account. Use those as a starting point and save under your own user account.<br />
<div class="mw-collapsible-content"><br />
# No obvious cause for the occasional stage drift was found. The system continues to meet the <20 nm stitching and overlay accuracy specs.<br />
</div><br />
</div><br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
'''14th Apr, 2014''': SEM software update, WECAS gui update, exposure firmware update<br />
<div class="mw-collapsible-content"><br />
# SEM software update. Seems like a minor update b.01 to b.02.<br />
# WECAS has shiny new icons. Basic workflow remains the same.<br />
# Search position repeatibility now set to a default value of 1 nm<br />
# Brightness automatically set to 200 during auto field correct procedures<br />
# New pop up menu during manual and auto registration which displays the current state in the reg2 procedure<br />
# Auto registration needs the search position repeatibility to be set to 30 nm otherwise it will get stuck in a loop trying to get the number down to 1 nm<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
'''4th Dec, 2013''': Filament change, aperture change, new field correction markers, SEM software update<br />
<div class="mw-collapsible-content"><br />
#You can now choose 960 000 dots for any given write field. The minimum dwell time remains fixed at 0.06 us.<br />
#We have a new set of markers for field correction. Only I change the markers periodically. If you have trouble with field correction (>5 attempts):<br />
##Is your brightness ~200 (or more)?<br />
##Have you waited atleast 20 mins after conditioning the beam? Column drift, especially after a large change in current will lead to failed field correction<br />
## Sometimes field correction converges in 1-2 attempts before starting the exposure, but the FC between two registrations does not converge (or takes more than 5-6 attempts). This problem arises if the chip fixed at an angle larger than +-3 deg. Be aware that the brace itself could be screwed down at an angle, thereby messing up your chip orientation.<br />
##If you have followed the above guidelines and still have a problem, there is a chance the marker has been contaminated and need to pick a new marker. Call me (Shiv +45 2128 9025) and I'll guide you to pick a new marker OR change it yourself BUT let me know so I can mark the previous marker as used. It is important to keep track of used markers.<br />
#There is a new 'auto focus and stigmation' button. The algorithm is rough around the edges and only works at the reference position with circular gold features. Choose your magnification well. Too high and magnification and the resulting contamination will interfere with the auto focusing. At the end of the day, you'll probably still need to fine tune it manually.<br />
#Registration: Manu. H. and Auto H. have been replaced with just Manual and Auto. Manual is the same as Manu. H., however Auto keeps trying until the tolerance is less than specified value. For Auto registration, use a search position repeatibility of 30 nm.<br />
#The engineers have replaced the filament and the apertures in the system. They have readjusted the beam condition settings for the account 'Default'. Use those values as a starting point and save them to your designated account. The older conditions in your accounts will be far from the optimum.<br />
</div><br />
</div><br />
<br />
= Manuals and Guides =<br />
== Local Qdev versions - cheat sheet & detailed guide == <br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
* [https://wiki.nbi.ku.dk/qdevwiki/ElionixCheatSheet Cheat sheet (based on text by Henri)]<br />
<div class="mw-collapsible-content"><br />
* [[Media:ElionixQDevManual.pdf|QDev Elionix manual]] &mdash; written before the upgrade (linux->windows GUI), last updated 2013-03-05. Source repository [http://qdev-data.fys.ku.dk/git/repositories/view/guides/elionix-guide/ here], upload new pdf versions to [[File:ElionixQDevManual.pdf]].<br />
* [[Media:Elionix_Manual_v2.pdf|Manual from Jimmy and Hugh]] &mdash; pertains to Harvard system, last updated 4/9/09.<br />
<br />
=== Official ===<br />
<br />
* After upgrade:<br />
** [[Media:ElionixOverlayExposure.pdf|Overlay Exposures (Quick Reference)]] &mdash; by Taichi when he was in DK.<br />
** [[Media:ElionixGUITraining.pdf|Lose Ends from Training Session]] &mdash; by Taichi when he was in DK.<br />
<br />
* Before upgrade<br />
**[[Media:ElionixManualFull.pdf|Elionix 7000 User Manual (Full)]]<br />
**[[Media:ElionixFieldCorrectionTips.pdf|Field correction tips]] &mdash; by Taichi when he was in DK.<br />
**[[Media:ElionixTrainingSummary.pdf|Training summary]] &mdash; by Taichi when he was in DK.<br />
**[[Media:ElionixApertureAdjust.pdf|Aperture initialization and adjustment]] &mdash; by Taichi when he was in DK.<br />
**[[Media:ElionixStopStartManual.pdf|System shutdown and start-up manual]] &mdash; by Taichi when he was in DK.<br />
<br />
</div><br />
</div><br />
<br />
= Design PC =<br />
This is the PC in the Elionix room in the basement, next to the two racks with elionix hardware. You may use this PC to ready your design, convert to *.cell & *.con formats. The desktop has all the shortcuts to network folders (Design computers on the 4th floor, shared images from SEM PC and user folder from Exposure PC) and relevant software. Any files outsides the designated user folders (shortcut on desktop) can be deleted without warning. The login credentials are:<br />
: Username: ''Nanouser''<br />
: Password: <br />
<br />
The PC is labeled ''Elionix''.</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Training&diff=1565Training2018-09-14T08:24:34Z<p>Shiv: </p>
<hr />
<div>Getting trained on tool. Expand the relevant tool section below:<br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Elionix 7000 (100 kV)<br />
<div class="mw-collapsible-content"><br />
* You must be at least a Master student or signed up for a long term (>6 months) project to be allowed to use a tool.<br />
* Elionix is a high level tool: Make sure you are already trained to:<br />
** enter the cleanroom<br />
** use the microscope, spinner, asher<br />
** any other tool you'll need to prepare chips for the training. This could be the micromanipulator or the Heidelberg.<br />
* You'll need 3 sessions of about 2.5 hrs each on the tool to get trained on this tool.<br />
** Session 1 involves exposing alignment marks and one half of the overlay test pattern on a blank chip. After exposure you need to develop the pattern in the PMMA developer. This is enough for session 2.<br />
** Session 2 involves using the exposed alignment marks for marker registration and exposing the 2nd pattern (e.g., 2nd half of the overlay pattern).<br />
** Session 3 involves exposing a "real" pattern on a "real" chip.<br />
* Before any training slots are booked on the tool you'll need all of the following prepared:<br />
** Si chip (5-10 mm square) spin coated with A2 and baked at 185C/2mins. This chip will be used for sessions 1 & 2. This has to be a dummy chip.<br />
** A chip for your 3rd session. This is a "real" chip. Plan this internally within your sub group.<br />
** A design (gds, dxf, cif) for sessions 1 & 2 with:<br />
*** 4 alignment crosses (find out what marks work on the tool from your sub-group).<br />
*** Something to break the symmetry so you can tell chip orientation with your bare eye<br />
*** A pattern that you will use to test overlay (alignment between two lithography steps). A Vernier pattern is commonly used. Feel free to test your ideas.<br />
*** Something creative, somethin fun :) This is an exercise in learning CAD as well.<br />
** A design for the "real" chip to be exposed in session 3.<br />
* You'll also need a software session of about 0.5 hrs - arrange this with an Elionix superuser within your group.<br />
* Then follow workflow 3 at [https://wiki.nbi.ku.dk/qdevwiki/ElionixCheatSheet Qdev wiki] to convert your design files into the Elionix exposure format *co7. Make dedicated folders for each exposure.<br />
* Note: Do not use Beamer to prep the Elionix con files<br />
</div><br />
</div><br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Elionix F-125 (125 kV)<br />
<div class="mw-collapsible-content"><br />
Please contact Zhe Liu (zhe.liu [a] nbi ku dk)<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Heidelberg upg501<br />
<div class="mw-collapsible-content"><br />
* Have a design file ready. GDS, DXF or CIF format works fine. Make sure you are familiar with the design before your actual session.<br />
* Have a chip spin coated with an appropriate photoresist before the training session.<br />
** The photoresist is sensitive to white light. Use the yellow filter on the microscopes. The light source in the both scribers is white and will already "expose" your resist.<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
Raith e-Line<br />
<div class="mw-collapsible-content"><br />
* A design (gds, dxf, cif) for sessions 1 & 2 with:<br />
** 4 alignment crosses (find out what marks work on the tool from your sub-group).<br />
** Something to break the symmetry so you can tell chip orientation with your bare eye<br />
** A pattern that you will use to test overlay (alignment between two lithography steps). A Vernier pattern is commonly used. Feel free to test your ideas.<br />
** Something creative, somethin fun :) This is an exercise in learning CAD as well.<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
AJA metallization, sputtering or ion milling<br />
<div class="mw-collapsible-content"><br />
* You must have a sample ready before the training is arranged.<br />
</div><br />
</div><br />
<br />
<div class="toccolours mw-collapsible mw-collapsed"><br />
ALD 1 & 2<br />
<div class="mw-collapsible-content"><br />
* You must have a sample ready before the training is arranged.<br />
</div><br />
</div></div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1563Doses2018-08-07T20:32:43Z<p>Shiv: /* Experimental */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|300<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.<br />
== Experimental ==<br />
<br />
<br />
* Dose density matrix for small and large spot size.<br />
* Measure CD as a function of dose and density for the two spot sizes.<br />
* Intersection of the two plots, for a given density gives isofocal dose.<br />
* Convert doses to dose factors, given that 0% iso-dose factor == PEC_df <sub>0%</sub><br />
* Base dose == isofocal dose <sub>0%</sub> / PEC_df <sub>0%</sub><br />
* For density larger than 0%, predicted dose factor = (1+η)/(1+η*ρ*(1+φ/100))<br />
** 1+η = PEC_df <sub>0%</sub><br />
** Fit experimental isofocal dose factors and predicted dose factor by varying psi<br />
<br />
100 kV:<br />
<br />
Si: 897 uC/cm2 and phi = 75%<br />
<br />
125 kV:<br />
<br />
InP: 572 uC/cm2 and phi = 41%<br />
<br />
InAs: 589 uC/cm2 and phi = 33%<br />
<br />
Si: 906 uC/cm2 and phi = 45%<br />
<br />
GaAs:752 uC/cm2 and phi = 39%<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si (μC/cm<sup>2</sup>) '''/''' φ<br />
|InAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|InP (μC/cm<sup>2</sup>) '''/''' φ<br />
|GaAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|SiGe (μC/cm<sup>2</sup>) '''/''' φ<br />
|-<br />
|A2<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|897 / 75%<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}<br />
<br />
<br />
{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si (μC/cm<sup>2</sup>) '''/''' φ<br />
|InAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|InP (μC/cm<sup>2</sup>) '''/''' φ<br />
|GaAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|SiGe (μC/cm<sup>2</sup>) '''/''' φ<br />
|-<br />
|A2<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|906/ 45%<br />
|589/ 33%<br />
|572/ 41%<br />
|752/ 39%<br />
|?<br />
|-<br />
|A6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1562Doses2018-08-04T12:38:25Z<p>Shiv: /* Experimental */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|300<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.<br />
== Experimental ==<br />
<br />
<br />
* Dose density matrix for small and large spot size.<br />
* Measure CD as a function of dose and density for the two spot sizes.<br />
* Intersection of the two plots, for a given density gives isofocal dose.<br />
* Convert doses to dose factors, given that 0% iso-dose factor == PEC_df <sub>0%</sub><br />
* Base dose == isofocal dose <sub>0%</sub> / PEC_df <sub>0%</sub><br />
* For density larger than 0%, predicted dose factor = (1+η)/(1+η*ρ*(1+φ/100))<br />
** 1+η = PEC_df <sub>0%</sub><br />
** Fit experimental isofocal dose factors and predicted dose factor by varying psi<br />
<br />
<br />
125 kV:<br />
<br />
InP: 572 uC/cm2 and phi = 41%<br />
<br />
InAs: 589 uC/cm2 and phi = 33%<br />
<br />
Si: 906 uC/cm2 and phi = 45%<br />
<br />
GaAs:752 uC/cm2 and phi = 39%<br />
<br />
<br />
{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si (μC/cm<sup>2</sup>) '''/''' φ<br />
|InAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|InP (μC/cm<sup>2</sup>) '''/''' φ<br />
|GaAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|SiGe (μC/cm<sup>2</sup>) '''/''' φ<br />
|-<br />
|A2<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|906/ 45%<br />
|589/ 33%<br />
|572/ 41%<br />
|752/ 39%<br />
|?<br />
|-<br />
|A6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1561Doses2018-08-01T15:55:55Z<p>Shiv: /* Experimental */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|300<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.<br />
== Experimental ==<br />
<br />
<br />
* Dose density matrix for small and large spot size.<br />
* Measure CD as a function of dose and density for the two spot sizes.<br />
* Intersection of the two plots, for a given density gives isofocal dose.<br />
* Convert doses to dose factors, given that 0% iso-dose factor == PEC_df <sub>0%</sub><br />
* Base dose == isofocal dose <sub>0%</sub> / PEC_df <sub>0%</sub><br />
* For density larger than 0%, predicted dose factor = (1+η)/(1+η*ρ*(1+φ/100))<br />
** 1+η = PEC_df <sub>0%</sub><br />
** Fit experimental isofocal dose factors and predicted dose factor by varying psi<br />
<br />
<br />
125 kV:<br />
<br />
InP: 607 uC/cm2 and phi = 35%<br />
<br />
InAs: 589 uC/cm2 and phi = 33%<br />
<br />
Si: 906 uC/cm2 and phi = 45%<br />
<br />
GaAs:752 uC/cm2 and phi = 39%<br />
<br />
<br />
{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si (μC/cm<sup>2</sup>) '''/''' φ<br />
|InAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|InP (μC/cm<sup>2</sup>) '''/''' φ<br />
|GaAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|SiGe (μC/cm<sup>2</sup>) '''/''' φ<br />
|-<br />
|A2<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|906/ 45%<br />
|589/ 33%<br />
|607/ 35%<br />
|752/ 39%<br />
|?<br />
|-<br />
|A6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1560Doses2018-07-31T22:49:12Z<p>Shiv: /* Experimental */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|300<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.<br />
== Experimental ==<br />
<br />
<br />
* Dose density matrix for small and large spot size.<br />
* Measure CD as a function of dose and density for the two spot sizes.<br />
* Intersection of the two plots, for a given density gives isofocal dose.<br />
* Convert doses to dose factors, given that 0% iso-dose factor == PEC_df <sub>0%</sub><br />
* Base dose == isofocal dose <sub>0%</sub> / PEC_df <sub>0%</sub><br />
* For density larger than 0%, predicted dose factor = (1+η)/(1+η*ρ*(1+φ/100))<br />
** 1+η = PEC_df <sub>0%</sub><br />
** Fit experimental isofocal dose factors and predicted dose factor by varying psi<br />
<br />
<br />
125 kV:<br />
<br />
InP: 607 uC/cm2 and phi = 35%<br />
<br />
InAs: 589 uC/cm2 and phi = 41%<br />
<br />
Si: 906 uC/cm2 and phi = 45%<br />
<br />
GaAs:752 uC/cm2 and phi = 39%<br />
<br />
<br />
{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si (μC/cm<sup>2</sup>) '''/''' φ<br />
|InAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|InP (μC/cm<sup>2</sup>) '''/''' φ<br />
|GaAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|SiGe (μC/cm<sup>2</sup>) '''/''' φ<br />
|-<br />
|A2<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|906/ 45%<br />
|589/ 41%<br />
|607/ 35%<br />
|752/ 39%<br />
|?<br />
|-<br />
|A6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1559Doses2018-07-31T22:08:35Z<p>Shiv: /* Experimental */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|300<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.<br />
== Experimental ==<br />
<br />
<br />
* Dose density matrix for small and large spot size.<br />
* Measure CD as a function of dose and density for the two spot sizes.<br />
* Intersection of the two plots, for a given density gives isofocal dose.<br />
* Convert doses to dose factors, given that 0% iso-dose factor == PEC_df <sub>0%</sub><br />
* Base dose == isofocal dose <sub>0%</sub> / PEC_df <sub>0%</sub><br />
* For density larger than 0%, predicted dose factor = (1+η)/(1+η*ρ*(1+φ/100))<br />
** 1+η = PEC_df <sub>0%</sub><br />
** Fit experimental isofocal dose factors and predicted dose factor by varying psi<br />
<br />
<br />
125 kV:<br />
<br />
InP: 607 uC/cm2 and phi = 35%<br />
<br />
InAs: 568 uC/cm2 and phi = 41%<br />
<br />
Si: 906 uC/cm2 and phi = 45%<br />
<br />
GaAs:752 uC/cm2 and phi = 39%<br />
<br />
<br />
{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si (μC/cm<sup>2</sup>) '''/''' φ<br />
|InAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|InP (μC/cm<sup>2</sup>) '''/''' φ<br />
|GaAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|SiGe (μC/cm<sup>2</sup>) '''/''' φ<br />
|-<br />
|A2<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|906/ 45%<br />
|568/ 41%<br />
|607/ 35%<br />
|752/ 39%<br />
|?<br />
|-<br />
|A6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1558Doses2018-07-31T21:06:54Z<p>Shiv: /* Experimental */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|300<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.<br />
== Experimental ==<br />
<br />
<br />
* Dose density matrix for small and large spot size.<br />
* Measure CD as a function of dose and density for the two spot sizes.<br />
* Intersection of the two plots, for a given density gives isofocal dose.<br />
* Convert doses to dose factors, given that 0% iso-dose factor == PEC_df <sub>0%</sub><br />
* Base dose == isofocal dose <sub>0%</sub> / PEC_df <sub>0%</sub><br />
* For density larger than 0%, predicted dose factor = (1+η)/(1+η*ρ*(1+φ/100))<br />
** 1+η = PEC_df <sub>0%</sub><br />
** Fit experimental isofocal dose factors and predicted dose factor by varying psi<br />
<br />
<br />
125 kV:<br />
<br />
InP: 607 uC/cm2 and phi = 35%<br />
<br />
InAs: 473 uC/cm2 and phi = 41%<br />
<br />
Si: 906 uC/cm2 and phi = 45%<br />
<br />
GaAs:752 uC/cm2 and phi = 39%<br />
<br />
<br />
{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si (μC/cm<sup>2</sup>) '''/''' φ<br />
|InAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|InP (μC/cm<sup>2</sup>) '''/''' φ<br />
|GaAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|SiGe (μC/cm<sup>2</sup>) '''/''' φ<br />
|-<br />
|A2<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|906/ 45%<br />
|473/ 41%<br />
|607/ 35%<br />
|752/ 39%<br />
|?<br />
|-<br />
|A6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1557Doses2018-07-31T17:21:12Z<p>Shiv: /* Experimental */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|300<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.<br />
== Experimental ==<br />
<br />
<br />
* Dose density matrix for small and large spot size.<br />
* Measure CD as a function of dose and density for the two spot sizes.<br />
* Intersection of the two plots, for a given density gives isofocal dose.<br />
* Convert doses to dose factors, given that 0% iso-dose factor == PEC_df <sub>0%</sub><br />
* Base dose == isofocal dose <sub>0%</sub> / PEC_df <sub>0%</sub><br />
* For density larger than 0%, predicted dose factor = (1+η)/(1+η*ρ*(1+φ/100))<br />
** 1+η = PEC_df <sub>0%</sub><br />
** Fit experimental isofocal dose factors and predicted dose factor by varying psi<br />
<br />
<br />
125 kV:<br />
<br />
InP: 607 uC/cm2 and phi = 35%<br />
<br />
InAs: 587 uC/cm2 and phi = 35%<br />
<br />
Si: 906 uC/cm2 and phi = 45%<br />
<br />
GaAs:752 uC/cm2 and phi = 39%<br />
<br />
<br />
{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si (μC/cm<sup>2</sup>) '''/''' φ<br />
|InAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|InP (μC/cm<sup>2</sup>) '''/''' φ<br />
|GaAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|SiGe (μC/cm<sup>2</sup>) '''/''' φ<br />
|-<br />
|A2<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|906/ 45%<br />
|587/ 35%<br />
|607/ 35%<br />
|752/ 39%<br />
|?<br />
|-<br />
|A6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1556Doses2018-07-31T17:21:01Z<p>Shiv: /* Experimental */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|300<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.<br />
== Experimental ==<br />
<br />
<br />
* Dose density matrix for small and large spot size.<br />
* Measure CD as a function of dose and density for the two spot sizes.<br />
* Intersection of the two plots, for a given density gives isofocal dose.<br />
* Convert doses to dose factors, given that 0% iso-dose factor == PEC_df <sub>0%</sub><br />
* Base dose == isofocal dose <sub>0%</sub> / PEC_df <sub>0%</sub><br />
* For density larger than 0%, predicted dose factor = (1+η)/(1+η*ρ*(1+φ/100))<br />
** 1+η = PEC_df <sub>0%</sub><br />
** Fit experimental isofocal dose factors and predicted dose factor by varying psi<br />
<br />
<br />
125 kV:<br />
<br />
InP: 607 uC/cm2 and phi = 35%<br />
<br />
InAs: 587 uC/cm2 and phi = 35%<br />
<br />
Si: 906 uC/cm2 and phi = 45%<br />
<br />
GaAs:752 uC/cm2 and phi = 39%<br />
<br />
<br />
{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si (μC/cm<sup>2</sup>) '''/''' φ<br />
|InAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|InP (μC/cm<sup>2</sup>) '''/''' φ<br />
|GaAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|SiGe (μC/cm<sup>2</sup>) '''/''' φ<br />
|-<br />
|A2<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|906/ 45%<br />
|587/35%<br />
|607/ 35%<br />
|752/ 39%<br />
|?<br />
|-<br />
|A6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1555Doses2018-07-31T17:19:49Z<p>Shiv: </p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|300<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.<br />
== Experimental ==<br />
<br />
<br />
* Dose density matrix for small and large spot size.<br />
* Measure CD as a function of dose and density for the two spot sizes.<br />
* Intersection of the two plots, for a given density gives isofocal dose.<br />
* Convert doses to dose factors, given that 0% iso-dose factor == PEC_df <sub>0%</sub><br />
* Base dose == isofocal dose <sub>0%</sub> / PEC_df <sub>0%</sub><br />
* For density larger than 0%, predicted dose factor = (1+η)/(1+η*ρ*(1+φ/100))<br />
** 1+η = PEC_df <sub>0%</sub><br />
** Fit experimental isofocal dose factors and predicted dose factor by varying psi<br />
<br />
<br />
125 kV:<br />
<br />
InP: 607 uC/cm2 and phi = 35%<br />
<br />
InAs: <br />
<br />
Si: 906 uC/cm2 and phi = 45%<br />
<br />
GaAs:752 uC/cm2 and phi = 39%<br />
<br />
<br />
{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si (μC/cm<sup>2</sup>) '''/''' φ<br />
|InAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|InP (μC/cm<sup>2</sup>) '''/''' φ<br />
|GaAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|SiGe (μC/cm<sup>2</sup>) '''/''' φ<br />
|-<br />
|A2<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|906/ 45%<br />
|587/35%<br />
|607/ 35%<br />
|752/ 39%<br />
|?<br />
|-<br />
|A6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1554Doses2018-07-30T15:00:01Z<p>Shiv: /* Experimental */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|300<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.<br />
== Experimental ==<br />
<br />
<br />
* Dose density matrix for small and large spot size.<br />
* Measure CD as a function of dose and density for the two spot sizes.<br />
* Intersection of the two plots, for a given density gives isofocal dose.<br />
* Convert doses to dose factors, given that 0% iso-dose factor == PEC_df <sub>0%</sub><br />
* Base dose == isofocal dose <sub>0%</sub> / PEC_df <sub>0%</sub><br />
* For density larger than 0%, predicted dose factor = (1+η)/(1+η*ρ*(1+φ/100))<br />
** 1+η = PEC_df <sub>0%</sub><br />
** Fit experimental isofocal dose factors and predicted dose factor by varying psi<br />
<br />
<br />
125 kV:<br />
<br />
InP: 607 uC/cm2 and phi = 35%<br />
<br />
InAs: <br />
<br />
Si: 906 uC/cm2 and phi = 45%<br />
<br />
GaAs:752 uC/cm2 and phi = 39%<br />
<br />
<br />
{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si (μC/cm<sup>2</sup>) '''/''' φ<br />
|InAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|InP (μC/cm<sup>2</sup>) '''/''' φ<br />
|GaAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|SiGe (μC/cm<sup>2</sup>) '''/''' φ<br />
|-<br />
|A2<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|906/ 45%<br />
|?<br />
|607/ 35%<br />
|752/ 39%<br />
|?<br />
|-<br />
|A6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1553Doses2018-07-30T14:59:24Z<p>Shiv: /* Experimental */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|300<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.<br />
== Experimental ==<br />
<br />
<br />
* Dose density matrix for small and large spot size.<br />
* Measure CD as a function of dose and density for the two spot sizes.<br />
* Intersection of the two plots, for a given density gives isofocal dose.<br />
* Convert doses to dose factors, given that 0% isodose == PEC_df <sub>0%</sub><br />
* Base dose == isofocal dose <sub>0%</sub> / PEC_df <sub>0%</sub><br />
* For density larger than 0%, predicted dose factor = (1+η)/(1+η*ρ*(1+φ/100))<br />
** 1+η = PEC_df <sub>0%</sub><br />
** Fit experimental isofocal dose factors and predicted dose factor by varying psi<br />
<br />
<br />
125 kV:<br />
<br />
InP: 607 uC/cm2 and phi = 35%<br />
<br />
InAs: <br />
<br />
Si: 906 uC/cm2 and phi = 45%<br />
<br />
GaAs:752 uC/cm2 and phi = 39%<br />
<br />
<br />
{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si (μC/cm<sup>2</sup>) '''/''' φ<br />
|InAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|InP (μC/cm<sup>2</sup>) '''/''' φ<br />
|GaAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|SiGe (μC/cm<sup>2</sup>) '''/''' φ<br />
|-<br />
|A2<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|906/ 45%<br />
|?<br />
|607/ 35%<br />
|752/ 39%<br />
|?<br />
|-<br />
|A6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1552Doses2018-07-30T14:44:55Z<p>Shiv: /* Experimental */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|300<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.<br />
== Experimental ==<br />
125 kV:<br />
<br />
InP: 607 uC/cm2 and phi = 35%<br />
<br />
InAs: <br />
<br />
Si: 906 uC/cm2 and phi = 45%<br />
<br />
GaAs:752 uC/cm2 and phi = 39%<br />
<br />
<br />
{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si (μC/cm<sup>2</sup>) '''/''' φ<br />
|InAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|InP (μC/cm<sup>2</sup>) '''/''' φ<br />
|GaAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|SiGe (μC/cm<sup>2</sup>) '''/''' φ<br />
|-<br />
|A2<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|906/ 45%<br />
|?<br />
|607/ 35%<br />
|752/ 39%<br />
|?<br />
|-<br />
|A6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1551Doses2018-07-30T14:44:42Z<p>Shiv: /* Experimental */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|300<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.<br />
== Experimental ==<br />
125 kV:<br />
InP: 607 uC/cm2 and phi = 35%<br />
<br />
InAs: <br />
<br />
Si: 906 uC/cm2 and phi = 45%<br />
<br />
GaAs:752 uC/cm2 and phi = 39%<br />
<br />
<br />
{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si (μC/cm<sup>2</sup>) '''/''' φ<br />
|InAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|InP (μC/cm<sup>2</sup>) '''/''' φ<br />
|GaAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|SiGe (μC/cm<sup>2</sup>) '''/''' φ<br />
|-<br />
|A2<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|906/ 45%<br />
|?<br />
|607/ 35%<br />
|752/ 39%<br />
|?<br />
|-<br />
|A6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1550Doses2018-07-30T14:42:43Z<p>Shiv: /* Experimental */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|300<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.<br />
== Experimental ==<br />
125 kV:<br />
InP: 607 uC/cm2 and phi = 35%<br />
<br />
InAs:<br />
<br />
Si: 906 uC/cm2 and phi = 45%<br />
<br />
GaAs:752 uC/cm2 and phi = 39%<br />
<br />
<br />
{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si (μC/cm<sup>2</sup>) '''/''' φ<br />
|InAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|InP (μC/cm<sup>2</sup>) '''/''' φ<br />
|GaAs (μC/cm<sup>2</sup>) '''/''' φ<br />
|SiGe (μC/cm<sup>2</sup>) '''/''' φ<br />
|-<br />
|A2<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|906/ 45%<br />
|?<br />
|607/ 35%<br />
|752/ 39%<br />
|?<br />
|-<br />
|A6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1549Doses2018-07-30T14:42:16Z<p>Shiv: /* Experimental */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|300<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.<br />
== Experimental ==<br />
125 kV:<br />
InP: 607 uC/cm2 and phi = 35%<br />
<br />
InAs:<br />
<br />
Si: 906 uC/cm2 and phi = 45%<br />
<br />
GaAs:752 uC/cm2 and phi = 39%<br />
<br />
<br />
{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si (μC/cm<sup>2</sup>) '''/''' φ (%)<br />
|InAs (μC/cm<sup>2</sup>) '''/''' φ (%)<br />
|InP (μC/cm<sup>2</sup>) '''/''' φ (%)<br />
|GaAs (μC/cm<sup>2</sup>) '''/''' φ (%)<br />
|SiGe (μC/cm<sup>2</sup>) '''/''' φ (%)<br />
|-<br />
|A2<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|906/ 45%<br />
|?<br />
|607/ 35%<br />
|752/ 39%<br />
|?<br />
|-<br />
|A6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1548Doses2018-07-30T14:40:48Z<p>Shiv: </p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|300<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.<br />
== Experimental ==<br />
125 kV:<br />
InP: 607 uC/cm2 and phi = 35%<br />
<br />
InAs:<br />
<br />
Si: 906 uC/cm2 and phi = 45%<br />
<br />
GaAs:752 uC/cm2 and phi = 39%<br />
<br />
<br />
{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si (μC/cm<sup>2</sup>)/φ (%)<br />
|InAs (μC/cm<sup>2</sup>)/φ (%)<br />
|InP (μC/cm<sup>2</sup>)/φ (%)<br />
|GaAs (μC/cm<sup>2</sup>)/φ (%)<br />
|SiGe (μC/cm<sup>2</sup>)/φ (%)<br />
|-<br />
|A2<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|906<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1547Doses2018-07-30T14:35:36Z<p>Shiv: /* Experimental */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|300<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.<br />
== Experimental ==<br />
125 kV:<br />
InP: 607 uC/cm2 and phi = 35%<br />
<br />
InAs:<br />
<br />
Si: 906 uC/cm2 and phi = 45%<br />
<br />
GaAs:752 uC/cm2 and phi = 39%</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1546Doses2018-07-30T14:35:23Z<p>Shiv: </p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|300<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.<br />
== Experimental ==<br />
125 kV:<br />
InP: 607 uC/cm2 and phi = 35%<br />
InAs:<br />
Si: 906 uC/cm2 and phi = 45%<br />
GaAs:752 uC/cm2 and phi = 39%</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=JEOL_7800F&diff=1545JEOL 7800F2018-07-07T15:26:45Z<p>Shiv: </p>
<hr />
<div>{{Infobox tool<br />
|image = Tools JEOL 7800F.jpg<br />
|toolfullname = JEOL JSM-7800F<br />
|website = http://www.jeol.de<br />
|company = JEOL, Ltd.<br />
|description = Scanning electron microscope<br />
|location = 03.1.K08<br />
|primary = Nader<br />
|secondary = Shiv<br />
|limits = 2 hours per day during office hours<br />
|computer = TBD<br />
|manual = A printed version is in a blue binder by the instrument<br />
}}<br />
<br />
The JEOL 7800F is a 30 kV field emission scanning electron microscope (SEM). It is equipped with two [https://en.wikipedia.org/wiki/Everhart-Thornley_detector secondary electron detectors] a backscatter detector, and a EDS detector. It has a eucentric stage, a range of different sample holders depending on application requirements, and can accommodate samples of up to 50 mm in diameter. A unique feature of this SEM, is its ability to place a negative bias on the sample stage in order to decelerate incoming electrons as well as to eject secondary electrons, thereby increasing the signal-to-noise ratio. This feature is known as gentle beam (GB), and is particularly useful when working at low acceleration voltages. <br />
<br />
= Overview =<br />
<br />
The different components of the SEM are illustrated in the two figures below: <br />
<br />
[[File:JEOL 7800F Overview 1.png|left|thumb|Left side of the JEOL 7800F]]<br />
[[File:JEOL 7800F Overview 2.png|left|thumb|Right side of the JEOL 7800F]]<br />
[[File:JEOL 7800F consoles.png|left|thumb|Stage and beam control consoles]]<br />
<br />
* The lower electron detector (LED) is a [https://en.wikipedia.org/wiki/Secondary_electrons secondary electron] detector, located in the chamber, and is mostly used for overview images, or in conjunction with sample tilting or high acceleration voltages.<br />
* The upper electron detector (UED) is an in-lens secondary electron detector located in the electron beam column. It is typically used for obtaining ultrahigh resolution iamges at low acceleration voltages. It is usually used in conjunction with the gentle beam (GB).<br />
* The backscatter detector (BSD) measures the high energy electrons from the incident beam that are backscattered by the sample surface. Particularly useful for samples composed of different materials of contrasting densities. The detector is inserted by a pneumatic valve when needed by the user, but is otherwise retracted.<br />
* The EDS detector measures the x-ray wavelengths of photons generated in the sample when exposed to the electron beam. Using the measured x-ray spectrum, the sample material composition may be determined.<br />
* The chamber camera is colour sensitive, and primarily used to see the sample and sample holder in relation to the pole-piece. It can only be switched on if the gun-valve is closed, and the gun-valve cannot be opened while the camera is on.<br />
* The loadlock camera automatically takes a picture of the sample surface when the loadlock is evacuated. However, if the user is not logged in, the image will not be taken, and there is no way to take it without venting and re-evacuating the loadlock. The overview picture can be used for rough navigation of the sample. <br />
* There is a magnetic field sensor suspended adjacent the electron beam column, and is connected to a magnetic field cancellation unit in the corner of the room. If you notice interference, or feel that you are not reaching the image resolution you feel you should, check the field cancellation unit to see if it has been tripped. This happens once in a while due to vibration from foot traffic outside, etc, and the field cancellation may be restored by pressing the reset button on the unit.<br />
* The SEM has a N2 dewar for cooling the sample stage.<br />
<br />
= Loading sample =<br />
<br />
# '''Select the appropriate sample holder:''' There are several different sample holders available for the SEM, each adapted for a particular sample size or function, such as a full 2 inch wafer holder, cross-sectional sample holder etc. Generally, you should use the smallest sample holder that will accommodate your sample. This will give you the greatest range of tilt. The PC-SEM software knows about the geometry of the different sample holders, and will automatically set the safe tilt angles for you, and prevent you from accidentally running the sample holder into the pole-piece. <br />
# '''Attach the sample:''' The 2 inch wafer holder allows for the attachment of samples to the holder via clips, and the cross-sectional sample holders alow the samples to be either clamped in place or mounted with a screw. For the remaining sample holders, and adhesive must be used, e.g. carbon tape, graphite paste, or silver conducting paste. Most users use the carbon tape. It is easy to use, and to remove, but due to the elastic nature of the tape, some drift may occur at high magnification. If this is a problem, or you have fragile samples that may break when removed from the adhesive tape, you can try the graphite paste. It has lower adhesion, but also more electrically resistive. There are two pastes available, one suspended in water solution, and the other in isopropanol. Apply only a small dot to the sample holder surface and place your sample over it, press down gently on the sample and then leave it to try for about 5 minutes. Test whether the sample is well attached to the sample holder before loading. Note: Do not use for full wafers.<br />
# '''Set the sample height:''' [[File:Sample holder.png|right|thumb|The 12.5 mm sample holder as seen from the side and from below.]] The sample must be attached to the sample holder such that its surface protrudes slightly from the edge of the sample holder when viewed from the side. The height of this protrusion is known as the sample surface offset. If the sample surface is below the edge of the sample holder, it must be adjusted. In the case of the 12.5 mm sample holder (see figure), this is done by loosening the two retaining screws on the side of the holer, and then screwing the large screw on the underside of the holder. This adjusts the height of the central stub to which the sample is attached.<br />
# '''Load the sample holder:''' Hold the VENT button for two seconds, or until you hear a valve close and the hissing sound of N2 entering the loadlock, and then release clip on the side of the loadlock. This avoids an overpressure from forming within the loadlock which could dislodge the loadlock o-ring. Once the hissing stops, open the loadlock and push the sample holder into the mounting brace. Make sure it sits snugly against the flat edge, and verify that it isn't tilted. Close the loadlock, close the brace, and then press the EVAC. The system will start rough-pumping the loadlock. Pressing EVAC will also trigger the loadlock camera to take a picture of the sample surface, which can be used for navigation later on.<br />
# ''' Insert the sample holder into the chamber:''' Once the pressure in the loadlock reaches 1.6 Pa, the SEM will automatically move the rough pumping to the back of the turbopump, and open the gate valve. This process emits three hisses, after which you can move the sample holder into the chamber using the loading rod, in accordance with the following procedure.<br />
<br />
{| width="80%" align="center"<br />
|-<br />
| [[File:JEOL 7800F loading 1.png | 275px]] <br />
|<br />
* Lower the loading rod to the horizontal position by pivoting it downwards by 90°. Once horizontal, it will be pulled in part-ways by a spring.<br />
* Lightly lift the rod a few degrees while applying a very gentle force along it, in order for it to reach the loading position (you should hear a metallic snap).<br />
|-<br />
| [[File:JEOL 7800F loading 2.png | 275px]] <br />
|<br />
* Push the rod directly into the chamber. Do not apply a up/down force, nor twist the rod. <br />
|-<br />
| [[File:JEOL 7800F loading 3.png | 275px]] <br />
|<br />
* You should feel the vacuum help bring in the rod<br />
|-<br />
| [[File:JEOL 7800F loading 4.png | 275px]] <br />
|<br />
* Once the rod is almost fully inserted, you will feel an increased resistance. This is due to the two braces (FIXME) meeting, and is normal. Push a little harder, until you overcome the resistance. <br />
* When the rod is fully inserted, a dialog box will pop up in PC-SEM, asking which sample holder was inserted. <span style="color:#FF0000>''It is absolutely imperative that you select the correct one from the menu. Not doing so may lead to catastrophic damage to the instrument.''</span><br />
* Leave the sample surface offset at 0 mm for now.<br />
|-<br />
| [[File:JEOL 7800F loading 5.png | 275px]] <br />
|<br />
* Pull the rod all the way out, until you see the gray plastic stopper pop up, which prevents the rod from being pulled back in. You should hear a clicking noise.<br />
|-<br />
| [[File:JEOL 7800F loading 6.png | 275px]] <br />
|<br />
* Pivot the rod back into the vertical standby position.<br />
|}<br />
<br />
= Measuring sample surface offset =<br />
<br />
The SEM uses the sample surface offset value along with the geometry of the sample holder used, to set the allowed ranges for tilt, vertical position, etc. If not set correctly, you will risk running the sample holder into the pole-piece, from which the focused electron beam emerges. A secondary purpose of setting the offset, is that when the focus is linked to the z-coordinate, changing the working distance will automatically set the correct value of z, giving you a good starting focus.<br />
<br />
Let's start by defining a few concepts: <br />
<br />
[[File:JEOL7800F offset.png|right|200px]]<br />
* The distance form the edge of the pole-piece to the point at which the electron beam is focused is known as the working distance (WD).<br />
* The ''z'' coordinate is the distance from the edge of the pole-piece to the edge of the sample holder<br />
* The sample surface offset (''o'') is the the distance<br />
<br />
Thus, it is clear that for the electron beam to be in focus at the sample surface, the condition WD + ''o'' = ''z'' must be true.<br />
<br />
To measure the offset, do as follows:<br />
# Make sure the ZFC button is enabled<br />
# Move the sample holder closer to the pole-piece, but keep a safe distance from it; set WD to e.g. 10 or 15 mm, by clicking on WD in the micrograph datazone. The z will be adjusted automatically.<br />
# Set the acceleration voltage to a reasonable value (say 10 kV).<br />
# Once the stage has stopped moving, find something on the surface of your sample to focus on, and zoom in on it<br />
# Now, slowly rotate the ring around the track-ball until you get a reasonably good focus.<br />
# Increase magnification if appropriate, and refine the focus. <br />
# Once you’re happy, the difference between the z and WD gives the offset: ''o'' = ''z'' - WD<br />
# Click on the image of the sample holder in the lower-right quadrant of PC-SEM, and enter the offset value into the field at the bottom of the dialog.<br />
<br />
<span style="color:#FF0000>Please note: The offset should always be measured with respect to the highest point on the sample or sample holder. For example, if you are using a sample holder with retraining pins that are held in place with a screw, the head of the screw is now the highest point and should be used to measure the offset.</span><br />
<br />
= Navigating to your region of interest =<br />
Move to your region of interest. You have several options for stage navigation:<br />
* Dragging and dropping with the mouse in the image area<br />
* Right-clicking on objects in the image area or stage navigation image<br />
* The trackball<br />
* The x/y buttons on the stage console<br />
<br />
If you have difficulties locating your structure, you can enable the LDF mode. It will give you a larger field of view and a larger depth of focus, at the expense of imaging resolution. Please note, the LDF mode works by switching off one of the focusing lenses, so if you have LDF mode on for extended periods, you may experience drift after it is turned off. This is due to the lens heating back as current passes through its focusing coils.<br />
<br />
= Imaging =<br />
<br />
== Choice of acceleration voltage, working distance, detector, etc. ==<br />
<br />
The choice of acceleration voltage depends on what you want to observe. That being said, the higher the acceleration voltage, the deeper into your sample the electron beam will penetrate, which can be useful e.g. for imaging through oxide layers, etc. On the other hand, if you want to perform surface imaging, you will typically want a low acceleration voltage. As a very general rule of thumb (with lots of exceptions), the working distance should match the acceleration voltage; the faster the electrons are travelling, the more difficult it is to focus them to a point over short distances away from the pole-piece.<br />
<br />
The choice of detector depends on your working distance, tilt, etc:<br />
<br />
* If you are using a high acceleration voltage, and thus a high working distance, or need to tilt your sample, use the LED. It is great for getting a quick image with minimal hassle, for overview images, etc.<br />
* If you are using a low acceleration voltage, and a low working distance, use the UED; the lower the working distance, the more the pole-piece will shadow the LED, reducing the signal strength. The UED in invariably used in GB mode, which enhances the signal strength by accelerating secondary electrons away from the sample and towards the detector. The maximum GB bias is 2 kV. Note: when using the UED, there is no benefit in going closer than 3 mm; the sample holder will start interacting with the EM field from the pole-piece.<br />
* Especially useful when you have samples composed of materials of contrasting atomic mass. It is typically used in conjunction with a working distance between 4 and 10 mm. Note: When using the BSD, you need a relatively slow scan speed with no frame averaging. More on that later.<br />
* You can combine the signals from multiple detectors by selecting ADD in the detector drop down menu. For instance, you can combine the image from the BSD illustrating the material contrast of the sample, with a surface image from either the LED or UED.<br />
<br />
== Beam conditioning == <br />
<br />
Before you can image your structure, you will need to condition the electron beam. This involves<br />
<br />
* focusing<br />
* aligning the aperture (wobble)<br />
* stigmating<br />
<br />
You can focus using either<br />
* the focus knob on the beam control console, or<br />
* clicking-and-holding on the focus button above the imaging area (see below), then dragging the mouse. <br />
:: [[File:JEOL 7800F mouse focus.png|672px]]<br />
<br />
If the imaged moved while focusing, you'll need to align the aperture. Press the wobble button; this will move the focus up and down, and cause the image to shift back and forth. Adjust the ''x'' and ''y'' knobs to minimize the wobbling – here ''x'' affects the x-movement, etc (in contrast to other systems). Once you’re satisfied, hit the wobble button again to disable it.<br />
<br />
Fine-tune the focus. If you notice that adjusting the focus causes the image to be stretched in one direction, and then another, it is astigmated. This distortion is a result of a non-circular beam cross-section at the sample surface, and will need to be corrected using the x and y stigmators. Using mouse-focusing: move the focus back and forth from one extreme (heavily astigmated in one direction) to another ((a) and (b) in the figure below), and find the central point where the image seems equally defocused in all directions (c). Once at this point, adjust the ''x'' or ''y'' stigmator until the focus is optimized, and then repeat the procedure for the other. This should result in an improved image (d). Fine-tune the focus again, and repeat the procedure if necessary.<br />
<br />
[[File:JEOL 7800F stigmation.png|center|850px|Steps for improving an astigmated image.]]<br />
<br />
== Scan speeds and the photo button == <br />
<br />
In the top-left of the beam-control console, you’ll find two buttons (quick, fine), that toggle the scan speed of the beam. Alternately, you can use the two buttons in the software menu. There are four speed settings available (quick1, quick2, fine1, fine2), the exact speed of which depends on your particular user settings. To change them, open the “Operation settings” dialog in the “Settings” menu (shown below).<br />
<br />
[[File:JEOL 7800F operation settings.png|center|650px|Operation settings dialog box.]]<br />
<br />
Here, the quick1 and quick2 are set to fast scan speeds, with 16 frame averages. The lower the scan speed number, the shorter the beam dwell-time at each pixel. The scan speed number follows a logarithmic scale, as shown below. <br />
<br />
[[File:JEOL 7800F scan speed chart.png|center|450px|Pixel dwell time v.s. scan speed number.]]<br />
<br />
The "Operation settings" dialog box also dictates what happens when you hit the "Freeze" button. It can either integrate for a certain number of frames depending on whether the scan speed is "Quick" or "Fine", or it can simply freeze the frame after scanning it. In the latter case, the beam will be deflected away from the sample, so carbon will not build up on the surface while the frame is frozen. For imaging at greater resolutions than the default addressing grid of 1280 x 960 pixels, the photo button must be used, and the desired resolution chosen in the "Operation settings" dialog. Alternatively, if you're fine with the default resolution, you can freeze the frame, and then press the photo button to save the image. The software will give an estimated time required to take an image, but in general, you should use the fastest scan speed which gives you an acceptable level of noise in your image, in order to avoid distortion of your image due to drift, as well as carbon contamination, etc.<br />
<br />
== Contrast and brightness ==<br />
<br />
In addition to manually adjusting the contrast and brightness knobs on the beam-control console, the system also has a automatic contrast and brightness button (ACB). It generally does a reasonable job of correctly setting the contrast and brightness, but if the image is completely underexposed (black) or overexposed (white), or completely out of focus, it might fail. <br />
<br />
[[File:JEOL 7800F histogram.png|right|350px]] Clicking the button with the triangle symbol above the LUT button will bring up a histogram of the pixel values of the current frame (shown). You can use this histogram to correctly expose your image: the brightness controls the position of the signal, the contrast controls the width of the signal, and you should aim to use the entire dynamic range of the detector, i.e. the signal should be as wide as possible while still fitting in the histogram range.<br />
<br />
= Unloading =<br />
<br />
When you're done with the SEM, turn off the beam, and retract the BSD if applicable, and then press the "Spec. Exchange" button. It will move the stage to the loading/unloading position (X,Y,R,T = 0, Z = 40 mm). Once it's done, the button will become green [[File:JEOL 7800F specimen exchange.png]] and it is safe to transfer the sample holder from the chamber to the loadlock using the loading rod as described above. Once in the loadlock, you can vent the loadlock to retrieve your sample. '''Leave the loadlock pumped down'''. Fill in the log-book, and transfer your files from the SEM PC to e.g. the ZDrive.<br />
<br />
= Tips and tricks =<br />
<br />
== Stepping and sample alignment ==<br />
<br />
Under the "Step Control" tab in the upper right corner of PC-SEM, you can find tools for stepping predefined distances in the X, Y directions, as well as rotation. The stepping can be defined as either a physical distance, or a percentage of the frame width. Furthermore, you can align the sample to a given axis clicking on either the horizontal or vertical ruler tools, and drawing a line along the preferred horizontal/vertical axis on the imaging area. This will rotate the stage to match your input. Furthermore, under "Step control" you can save a stage position by clicking the "Addition" button. If you later want to return to this position, you can select the position from the list, and then click on "Move".<br />
<br />
== Restoring stage and beam conditions from previously taken image ==<br />
<br />
In the "Image File" tab in the lower-left corner of PC-SEM, there is a dialog box which allows you to restore beam, stage, and detector conditions, acceleration voltage, magnification etc. from a previously taken image. Press browse to select the directory in which your images (as well as the sidecar .txt files). Once the images have been loaded, right click on an given image to restore the conditions it was taken under.<br />
<br />
== Dynamic focus ==<br />
<br />
When imaging samples at a high tilt, you may find that the depth of focus is not sufficient. You can compensate for this by checking the "Dyanmic Focus" box in the lower middle of PC-SEM, and using the tool in the drop-menu below to set the focus in two regions of your sample surface. When scanning, the SEM will use interpolation to attempt to keep the beam focused along the sample surface.<br />
<br />
== Refocusing after inserting the BSD ==<br />
<br />
At some point, you will run into a situation where you want to view your sample using the BSD, but inserting it causes your focus and beam conditions to become degraded. This is due to the fact that the BSD sits very snugly against the pole-piece, and disrupts the balance between the electrostatic and magnetic focusing. In order to restore your focus, use the "Focus Correct" slider at the bottom of the software to restore the balance between the two focusing mechanisms. Note that there is a slight hysteresis in the slider, and that the optimal focus may lie somewhere between two steps.<br />
<br />
== Probe current ==<br />
<br />
The probe current can be set using the spin box below the imaging area. The lower the probe current, the smaller the spot-size of the electron beam, and thus, the smaller the features you should be able to resolve. However, decreasing the probe current comes at the cost of a reduced signal-to-noise ratio, and thus there exists a trade-off relationship between signal and resolution. You can mitigate this to an extent by decreasing the scan-speed, but then drift may become an issue. In general, use the following to guide your choice of probe current:<br />
<br />
# ultra high resolution: 3-5 (usually only with gentle beam on)<br />
# high resolution: 6<br />
# standard: 8<br />
# overview: 10<br />
<br />
The probe current number relates logarithmically to the actual current as shown in the following graph:<br />
<br />
[[File:JEOL 7800F probe current chart.png|center|450px|Probe current v.s. probe current number.]]<br />
<br />
== Focus ranges ==<br />
<br />
There are two focusing regimes in the SEM; At working distances below ~5.5 mm, the beam will be focused with both an electrostatic and magnetic lens system. Above this working distance, the electrostatic lens is switched off. There is thus a discontinuity at this switching point, and is clearly visible as a "jump" in the image, and you should thus avoid positioning your sample surface there.<br />
<br />
= Resources =<br />
<br />
[[media:Invitation_to_the_SEM_World.pdf|Invitation to the SEM world]]<br />
<br />
[[media:JEOL_Guide_to_SMO.pdf|A guide to scanning microscope observation (JEOL)]]<br />
<br />
[[media:Hitachi_SEM_user_guide.pdf|Hitachi SEM user guide (2007)]]<br />
<br />
[[Category:Tools]]</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1508Doses2018-06-25T16:18:26Z<p>Shiv: </p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|300<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1507Doses2018-06-22T23:10:25Z<p>Shiv: </p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|500<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. However, if the developing time is fixed, say to 60s, a thinner layer of resist will need lower "base dose", since it's being over developed.</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1506Doses2018-06-22T21:51:52Z<p>Shiv: </p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|500<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
* GaAs: Uniform clearing <br />
* InP: Uniform clearing <br />
* InAs: Uniform clearing <br />
* Si: Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. If the developing time is fixed, say to 60s, a thinner layer of resist will need a "base dose", since it's being over developed.</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1505Doses2018-06-22T21:48:47Z<p>Shiv: </p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|500<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
<br />
==GaAs==<br />
Uniform clearing <br />
<br />
==InP==<br />
Uniform clearing <br />
<br />
==InAs==<br />
Uniform clearing <br />
<br />
==Si==<br />
Optimal contrast<br />
<br />
== Note ==<br />
Base dose does not change with resist thickness, developing time does. If the developing time is fixed, say to 60s, a thinner layer of resist will need a "base dose", since it's being over developed.</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1504Doses2018-06-22T14:18:47Z<p>Shiv: </p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|745<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|500<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|50k+A4<br />
|?<br />
|?<br />
|?<br />
|630<br />
|?<br />
|-<br />
|}<br />
= 125 kV =<br />
==GaAs==<br />
Uniform clearing <br />
<br />
==InP==<br />
Uniform clearing <br />
<br />
==InAs==<br />
Uniform clearing <br />
<br />
==Si==<br />
Optimal contrast<br />
<br />
= 100 kV =<br />
==GaAs==<br />
Uniform clearing<br />
<br />
==InP==<br />
Uniform clearing<br />
<br />
==InAs==<br />
Uniform clearing<br />
<br />
==Si==<br />
Optimal contrast</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1503Doses2018-06-22T14:11:21Z<p>Shiv: /* 100 kV */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|500<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}<br />
= 125 kV =<br />
==GaAs==<br />
Uniform clearing <br />
<br />
==InP==<br />
Uniform clearing <br />
<br />
==InAs==<br />
Uniform clearing <br />
<br />
==Si==<br />
Optimal contrast<br />
<br />
= 100 kV =<br />
==GaAs==<br />
Uniform clearing<br />
<br />
==InP==<br />
Uniform clearing<br />
<br />
==InAs==<br />
Uniform clearing<br />
<br />
==Si==<br />
Optimal contrast</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1502Doses2018-06-22T14:11:13Z<p>Shiv: /* 100 kV */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|500<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}<br />
= 125 kV =<br />
==GaAs==<br />
Uniform clearing <br />
<br />
==InP==<br />
Uniform clearing <br />
<br />
==InAs==<br />
Uniform clearing <br />
<br />
==Si==<br />
Optimal contrast<br />
<br />
= 100 kV =<br />
==GaAs==<br />
Uniform clearing<br />
<br />
==InP==<br />
Uniform clearing<br />
<br />
==InAs==<br />
Uniform clearing<br />
<br />
==Si==<br />
Optimal contrast<br />
<br />
= 100 kV =<br />
==GaAs==<br />
A6: --- uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK:IPA/10s IPA<br />
<br />
CSAR 13: 480uC/cm2 base dose ('''likely overdosed''')/ 24s o-Xylene/5s conc. MIBK develop/IPA rinse<br />
<br />
EL9: 380 uC/cm2 base dose/ 45s MIBK:IPA/ 10s IPA rinse</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1501Doses2018-06-22T14:10:42Z<p>Shiv: /* 100 kV */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|500<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}<br />
= 125 kV =<br />
==GaAs==<br />
Uniform clearing <br />
<br />
==InP==<br />
Uniform clearing <br />
<br />
==InAs==<br />
Uniform clearing <br />
<br />
==Si==<br />
Optimal contrast<br />
<br />
= 100 kV =<br />
==GaAs==<br />
Uniform clearing<br />
<br />
= 100 kV =<br />
==GaAs==<br />
A6: --- uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK:IPA/10s IPA<br />
<br />
CSAR 13: 480uC/cm2 base dose ('''likely overdosed''')/ 24s o-Xylene/5s conc. MIBK develop/IPA rinse<br />
<br />
EL9: 380 uC/cm2 base dose/ 45s MIBK:IPA/ 10s IPA rinse</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1500Doses2018-06-22T14:10:21Z<p>Shiv: /* 100 kV */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|500<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}<br />
= 125 kV =<br />
==GaAs==<br />
Uniform clearing <br />
<br />
==InP==<br />
Uniform clearing <br />
<br />
==InAs==<br />
Uniform clearing <br />
<br />
==Si==<br />
Optimal contrast<br />
<br />
= 100 kV =<br />
==GaAs==<br />
Uniform clearing<br />
<br />
= 100 kV =<br />
==GaAs==<br />
A6: --- uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK:IPA/10s IPA<br />
<br />
CSAR 13: 480uC/cm2 base dose ('''likely overdosed''')/ 24s o-Xylene/5s conc. MIBK develop/IPA rinse<br />
<br />
EL9: 380 uC/cm2 base dose/ 45s MIBK:IPA/ 10s IPA rinse<br />
<br />
==InP==<br />
A4.5: 550 uC/cm2 Uniform clearing Beamer base dose/60s MIBK:IPA dev/10s IPA<br />
<br />
==InAs==<br />
==Si==<br />
CSAR 9: 400 uC/cm2 optimal contrast/ 30s O-Xylene/5s conc. MIBK/IPA<br />
<br />
A4: 800 uC/cm2/40s MIBK:IPA dev./10s IPA<br />
<br />
A6: 1000 uC/cm2/60s MIBK:IPA dev./10s IPA</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1499Doses2018-06-22T14:10:11Z<p>Shiv: /* 125 kV */</p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|500<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}<br />
= 125 kV =<br />
==GaAs==<br />
Uniform clearing <br />
<br />
==InP==<br />
Uniform clearing <br />
<br />
==InAs==<br />
Uniform clearing <br />
<br />
==Si==<br />
Optimal contrast<br />
<br />
= 100 kV =<br />
==GaAs==<br />
A6: 760 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA<br />
<br />
= 100 kV =<br />
==GaAs==<br />
A6: --- uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK:IPA/10s IPA<br />
<br />
CSAR 13: 480uC/cm2 base dose ('''likely overdosed''')/ 24s o-Xylene/5s conc. MIBK develop/IPA rinse<br />
<br />
EL9: 380 uC/cm2 base dose/ 45s MIBK:IPA/ 10s IPA rinse<br />
<br />
==InP==<br />
A4.5: 550 uC/cm2 Uniform clearing Beamer base dose/60s MIBK:IPA dev/10s IPA<br />
<br />
==InAs==<br />
==Si==<br />
CSAR 9: 400 uC/cm2 optimal contrast/ 30s O-Xylene/5s conc. MIBK/IPA<br />
<br />
A4: 800 uC/cm2/40s MIBK:IPA dev./10s IPA<br />
<br />
A6: 1000 uC/cm2/60s MIBK:IPA dev./10s IPA</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1498Doses2018-06-22T14:08:52Z<p>Shiv: </p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|500<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|630<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|670<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}<br />
= 125 kV =<br />
==GaAs==<br />
A6: 742 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA<br />
<br />
CSAR13: 420uC/cm2 base dose/24s o-xylene/5s conc. MIBK develop with IPA rinse <br />
<br />
EL9: 420uC/cm2 base dose/45s MIBK:IPA develop with IPA rinse<br />
<br />
==InP==<br />
A4.5: 700 uC/cm2 Uniform clearing Beamer base dose/60s MIBK:IPA dev/10s IPA<br />
<br />
==InAs==<br />
==Si==<br />
CSAR 9: 430 uC/cm2 optimal contrast<br />
<br />
A4: 1000 uC/cm2<br />
<br />
A6: 1200 uC/cm2 (or 1000 uC/cm2 with longer development? To be tested)<br />
<br />
= 100 kV =<br />
==GaAs==<br />
A6: 760 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA<br />
<br />
= 100 kV =<br />
==GaAs==<br />
A6: --- uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK:IPA/10s IPA<br />
<br />
CSAR 13: 480uC/cm2 base dose ('''likely overdosed''')/ 24s o-Xylene/5s conc. MIBK develop/IPA rinse<br />
<br />
EL9: 380 uC/cm2 base dose/ 45s MIBK:IPA/ 10s IPA rinse<br />
<br />
==InP==<br />
A4.5: 550 uC/cm2 Uniform clearing Beamer base dose/60s MIBK:IPA dev/10s IPA<br />
<br />
==InAs==<br />
==Si==<br />
CSAR 9: 400 uC/cm2 optimal contrast/ 30s O-Xylene/5s conc. MIBK/IPA<br />
<br />
A4: 800 uC/cm2/40s MIBK:IPA dev./10s IPA<br />
<br />
A6: 1000 uC/cm2/60s MIBK:IPA dev./10s IPA</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1497Doses2018-06-18T13:29:07Z<p>Shiv: </p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|800<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|500<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|?<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}<br />
= 125 kV =<br />
==GaAs==<br />
A6: 742 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA<br />
<br />
CSAR13: 420uC/cm2 base dose/24s o-xylene/5s conc. MIBK develop with IPA rinse <br />
<br />
EL9: 420uC/cm2 base dose/45s MIBK:IPA develop with IPA rinse<br />
<br />
==InP==<br />
A4.5: 700 uC/cm2 Uniform clearing Beamer base dose/60s MIBK:IPA dev/10s IPA<br />
<br />
==InAs==<br />
==Si==<br />
CSAR 9: 430 uC/cm2 optimal contrast<br />
<br />
A4: 1000 uC/cm2<br />
<br />
A6: 1200 uC/cm2 (or 1000 uC/cm2 with longer development? To be tested)<br />
<br />
= 100 kV =<br />
==GaAs==<br />
A6: 760 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA<br />
<br />
= 100 kV =<br />
==GaAs==<br />
A6: --- uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK:IPA/10s IPA<br />
<br />
CSAR 13: 480uC/cm2 base dose ('''likely overdosed''')/ 24s o-Xylene/5s conc. MIBK develop/IPA rinse<br />
<br />
EL9: 380 uC/cm2 base dose/ 45s MIBK:IPA/ 10s IPA rinse<br />
<br />
==InP==<br />
A4.5: 550 uC/cm2 Uniform clearing Beamer base dose/60s MIBK:IPA dev/10s IPA<br />
<br />
==InAs==<br />
==Si==<br />
CSAR 9: 400 uC/cm2 optimal contrast/ 30s O-Xylene/5s conc. MIBK/IPA<br />
<br />
A4: 800 uC/cm2/40s MIBK:IPA dev./10s IPA<br />
<br />
A6: 1000 uC/cm2/60s MIBK:IPA dev./10s IPA</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1496Doses2018-06-15T09:50:01Z<p>Shiv: </p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|?<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|500<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|?<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}<br />
= 125 kV =<br />
==GaAs==<br />
A6: 742 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA<br />
<br />
CSAR13: 420uC/cm2 base dose/24s o-xylene/5s conc. MIBK develop with IPA rinse <br />
<br />
EL9: 420uC/cm2 base dose/45s MIBK:IPA develop with IPA rinse<br />
<br />
==InP==<br />
A4.5: 700 uC/cm2 Uniform clearing Beamer base dose/60s MIBK:IPA dev/10s IPA<br />
<br />
==InAs==<br />
==Si==<br />
CSAR 9: 430 uC/cm2 optimal contrast<br />
<br />
A4: 1000 uC/cm2<br />
<br />
A6: 1200 uC/cm2 (or 1000 uC/cm2 with longer development? To be tested)<br />
<br />
= 100 kV =<br />
==GaAs==<br />
A6: 760 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA<br />
<br />
= 100 kV =<br />
==GaAs==<br />
A6: --- uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK:IPA/10s IPA<br />
<br />
CSAR 13: 480uC/cm2 base dose ('''likely overdosed''')/ 24s o-Xylene/5s conc. MIBK develop/IPA rinse<br />
<br />
EL9: 380 uC/cm2 base dose/ 45s MIBK:IPA/ 10s IPA rinse<br />
<br />
==InP==<br />
A4.5: 550 uC/cm2 Uniform clearing Beamer base dose/60s MIBK:IPA dev/10s IPA<br />
<br />
==InAs==<br />
==Si==<br />
CSAR 9: 400 uC/cm2 optimal contrast/ 30s O-Xylene/5s conc. MIBK/IPA<br />
<br />
A4: 800 uC/cm2/40s MIBK:IPA dev./10s IPA<br />
<br />
A6: 1000 uC/cm2/60s MIBK:IPA dev./10s IPA</div>Shivhttps://wiki.nbi.ku.dk/w/cleanroom/index.php?title=Doses&diff=1495Doses2018-06-13T17:27:00Z<p>Shiv: </p>
<hr />
<div>{| class="wikitable"<br />
|+125 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|1000<br />
|700<br />
|?<br />
|700<br />
|?<br />
|-<br />
|A4<br />
|1000<br />
|700<br />
|?<br />
|700<br />
|?<br />
|-<br />
|A6<br />
|1200<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|420<br />
|?<br />
|-<br />
|CSAR4<br />
|430<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|450<br />
|?<br />
|?<br />
|350<br />
|?<br />
|-<br />
|}<br />
<br />
{| class="wikitable"<br />
|+100 kV<br />
|-<br />
| <br />
|Si<br />
|InAs<sup>UC</sup><br />
|InP<sup>UC</sup><br />
|GaAs<sup>UC</sup><br />
|SiGe<br />
|-<br />
|A2<br />
|900<br />
|?<br />
|500<br />
|?<br />
|?<br />
|-<br />
|A4<br />
|900<br />
|?<br />
|500<br />
|?<br />
|?<br />
|-<br />
|A6<br />
|1000<br />
|?<br />
|?<br />
|760<br />
|?<br />
|-<br />
|El6<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|El9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR4<br />
|400<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR9<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|CSAR13<br />
|?<br />
|?<br />
|?<br />
|?<br />
|?<br />
|-<br />
|}<br />
= 125 kV =<br />
==GaAs==<br />
A6: 742 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA<br />
<br />
CSAR13: 420uC/cm2 base dose/24s o-xylene/5s conc. MIBK develop with IPA rinse <br />
<br />
EL9: 420uC/cm2 base dose/45s MIBK:IPA develop with IPA rinse<br />
<br />
==InP==<br />
A4.5: 700 uC/cm2 Uniform clearing Beamer base dose/60s MIBK:IPA dev/10s IPA<br />
<br />
==InAs==<br />
==Si==<br />
CSAR 9: 430 uC/cm2 optimal contrast<br />
<br />
A4: 1000 uC/cm2<br />
<br />
A6: 1200 uC/cm2 (or 1000 uC/cm2 with longer development? To be tested)<br />
<br />
= 100 kV =<br />
==GaAs==<br />
A6: 760 uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK dev/10s IPA<br />
<br />
= 100 kV =<br />
==GaAs==<br />
A6: --- uC/cm2 Uniform clearing Beamer base dose/60s dev MIBK:IPA/10s IPA<br />
<br />
CSAR 13: 480uC/cm2 base dose ('''likely overdosed''')/ 24s o-Xylene/5s conc. MIBK develop/IPA rinse<br />
<br />
EL9: 380 uC/cm2 base dose/ 45s MIBK:IPA/ 10s IPA rinse<br />
<br />
==InP==<br />
A4.5: 550 uC/cm2 Uniform clearing Beamer base dose/60s MIBK:IPA dev/10s IPA<br />
<br />
==InAs==<br />
==Si==<br />
CSAR 9: 400 uC/cm2 optimal contrast/ 30s O-Xylene/5s conc. MIBK/IPA<br />
<br />
A4: 800 uC/cm2/40s MIBK:IPA dev./10s IPA<br />
<br />
A6: 1000 uC/cm2/60s MIBK:IPA dev./10s IPA</div>Shiv